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1. 发明申请

WO2003085166A3 ELECTROLESS DEPOSITION METHODS 审中-公开
公开(公告)号：WO2003085166A3
公开(公告)日：2003-10-16
申请号：PCT/US2003/010073
申请日：2003-04-02
申请人： APPLIED MATERIALS, INC.
发明人： PADHI, Deenesh , YAHALOM, Joseph , RAMANATHAN, Sivakami , MCGUIRK, Chris, R. , GANDIKOTA, Srinivas , DIXIT, Girish
IPC分类号： C23C18/16
摘要： Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.

2. 发明申请

WO2003085713A1 HOMOGENEOUS COPPER-TIN ALLOY PLATING FOR ENHANCEMENT OF ELECTRO-MIGRATION RESISTANCE IN INTERCONNECTS 审中-公开
标题翻译：均质铜合金镀层，用于增强互连电活动电阻
公开(公告)号：WO2003085713A1
公开(公告)日：2003-10-16
申请号：PCT/US2003/002224
申请日：2003-01-24
申请人： APPLIED MATERIALS, INC.
发明人： PADHI, Deenesh , RAMANATHAN, Sivakami , MCGUIRK, Chris, R. , GANDIKOTA, Srinivas , DIXIT, Girish
IPC分类号： H01L21/288
CPC分类号： H01L21/2885 , C25D3/58 , C25D5/50 , C25D7/123
摘要： Embodiments of the invention may generally provide a method for plating a homogenous copper tin alloy onto a semiconductor substrate. The method generally includes providing a plating solution to a plating cell, wherein the plating solution contains an acid, a copper ion source, and a tin ion source, the copper ion source including up to about 98.5% of the metal ions and the tin ions including up to about 1.5% of the metal ions, providing a plating bias to a conductive layer formed on the semiconductor substrate while the conductive layer is in fluid contact with the plating solution, the plating bias being configured to overlap a plating potential range of both copper and tin, and simultaneously plating copper and tin ions onto the conductive layer from the plating solution to form a homogenous copper tin alloy layer on the conductive layer.
摘要翻译：本发明的实施方案通常可以提供将均匀的铜锡合金电镀到半导体衬底上的方法。该方法通常包括向镀覆电池提供镀液，其中电镀溶液含有酸，铜离子源和锡离子源，所述铜离子源包括高达98.5％的金属离子和锡离子包括高达约1.5％的金属离子，当导电层与电镀液体流体接触时，对形成在半导体衬底上的导电层提供电镀偏压，镀层偏压被配置为与两者的电镀电位范围重叠铜和锡，并且同时从电镀液将铜和锡离子镀在导电层上，以在导电层上形成均匀的铜锡合金层。

3. 发明申请

WO2003057943A3 ELECTROLESS PLATING SYSTEM 审中-公开
公开(公告)号：WO2003057943A3
公开(公告)日：2003-07-17
申请号：PCT/US2002/040631
申请日：2002-12-20
申请人： APPLIED MATERIALS, INC.
发明人： STEVENS, Joseph, J. , LUBOMIRSKY, Dmitry , PANCHAM, Ian , OLGADO, Donald, J. , GRUNES, Howard, J. , MOK, Yeuk-Fai, Edwin , DIXIT, Girish
IPC分类号： C23C18/16
摘要： A method and apparatus for plating substrates, wherein the apparatus includes a central substrate transfer enclosure having at least one substrate transfer robot positioned therein. A substrate activation chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate plating chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate spin rinse dry chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot, and an annealing chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. At least one substrate pod loader in communication with the substrate transfer chamber and accessible to the at least one substrate transfer robot is also provided.

4. 发明申请

WO2003057943A2 ELECTROLESS PLATING SYSTEM 审中-公开
标题翻译：电镀系统
公开(公告)号：WO2003057943A2
公开(公告)日：2003-07-17
申请号：PCT/US2002/040631
申请日：2002-12-20
申请人： APPLIED MATERIALS, INC.
发明人： STEVENS, Joseph, J. , LUBOMIRSKY, Dmitry , PANCHAM, Ian , OLGADO, Donald, J. , GRUNES, Howard, J. , MOK, Yeuk-Fai, Edwin , DIXIT, Girish
IPC分类号： C23C18/16
CPC分类号： H01L21/67167 , C23C18/1632 , C23C18/1692 , H01L21/6723
摘要： A method and apparatus for plating substrates, wherein the apparatus includes a central substrate transfer enclosure having at least one substrate transfer robot positioned therein. A substrate activation chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate plating chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate spin rinse dry chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot, and an annealing chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. At least one substrate pod loader in communication with the substrate transfer chamber and accessible to the at least one substrate transfer robot is also provided.
摘要翻译：一种用于电镀基板的方法和装置，其中所述装置包括具有至少一个基板传送机器人的中央基板传送外壳。提供与中心基板传送外壳连通的基板激活室，并且可由至少一个基板传送机器人访问。提供与中心基板传送外壳连通的基板电镀室，并且可由至少一个基板传送机器人访问。提供与中央基板传送外壳连通的基板旋转漂洗干燥室，并且可由至少一个基板传送机器人访问，并且提供与中央基板传送外壳连通的退火室，并且可由至少一个基板传送机器人。还提供了至少一个与基板传送室连通并且可由至少一个基板传送机器人访问的基板盒装载器。

5. 发明申请

WO2003083182A3 PROCESS WINDOW FOR GAP-FILL ON VERY HIGH ASPECT RATIO STRUCTURES USING ADDITIVES IN LOW ACID COPPER BATHS 审中-公开
公开(公告)号：WO2003083182A3
公开(公告)日：2003-10-09
申请号：PCT/US2003/002280
申请日：2003-01-24
申请人： APPLIED MATERIALS, INC.
发明人： GANDIKOTA, Srinivas , MCGUIRK, Chris , PADHI, Deenesh , RAMANATHAN, Sivakami , DIXIT, Girish
IPC分类号： C25D3/38
摘要： The present invention provides a composition and method for void-free plating of a metal into high aspect ratio features. The plating process is carried out in a plating solution containing metal at a molar concentration of between about 0.4 M and about 0.9 M, an acid at a concentration of between about 4 mg/L and about 40 mg/L, a suppressor at a concentration of between about 2 mL/L and about 15 mL/L, an accelerator at a concentration of between about 1.5 mL/L and about 8 mL/L, and a leveler at a concentration of between about 4 mL/L and about 11 mL/L.

6. 发明申请

WO2003083182A2 PROCESS WINDOW FOR GAP-FILL ON VERY HIGH ASPECT RATIO STRUCTURES USING ADDITIVES IN LOW ACID COPPER BATHS 审中-公开
标题翻译：使用低酸铜的添加剂在非常高的比例结构上进行填充的过程窗口
公开(公告)号：WO2003083182A2
公开(公告)日：2003-10-09
申请号：PCT/US2003/002280
申请日：2003-01-24
申请人： APPLIED MATERIALS, INC.
发明人： GANDIKOTA, Srinivas , MCGUIRK, Chris , PADHI, Deenesh , RAMANATHAN, Sivakami , DIXIT, Girish
IPC分类号： C25D3/38
CPC分类号： C25D7/123 , C25D3/38 , H05K3/423
摘要： The present invention provides a composition and method for void-free plating of a metal into high aspect ratio features. The plating process is carried out in a plating solution containing metal at a molar concentration of between about 0.4 M and about 0.9 M, an acid at a concentration of between about 4 mg/L and about 40 mg/L, a suppressor at a concentration of between about 2 mL/L and about 15 mL/L, an accelerator at a concentration of between about 1.5 mL/L and about 8 mL/L, and a leveler at a concentration of between about 4 mL/L and about 11 mL/L.
摘要翻译：本发明提供了将金属无孔镀覆成高纵横比特征的组合物和方法。电镀方法在含有摩尔浓度为约0.4M至约0.9M的金属的镀液中，浓度为约4mg / L至约40mg / L的酸，浓度为的抑制剂约2mL / L至约15mL / L的浓度为约1.5mL / L至约8mL / L的加速剂，浓度为约4mL / L至约11mL / L。

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