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1. 发明申请

WO2017076659A1 POWER SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A POWER SEMICONDUCTOR DEVICE 审中-公开
标题翻译：功率半导体器件和用于制造功率半导体器件的方法
公开(公告)号：WO2017076659A1
公开(公告)日：2017-05-11
申请号：PCT/EP2016/075266
申请日：2016-10-20
申请人： ABB SCHWEIZ AG
发明人： DONZEL, Lise , SCHUDERER, Jürgen , DOBRZYNSKA, Jagoda , VOBECKY, Jan
IPC分类号： H01L23/31 , H01L29/06
CPC分类号： H01L29/0661 , H01L23/3185
摘要： The present invention relates to a power semiconductor device, comprising a substrate (12) having a first side (14) and a second side (16), the first side (14) and the second side (16) being located opposite to each other, wherein the first side (14) comprises a 5 cathode (18) and wherein the second side (14) comprises an anode (20), wherein a junction termination of a p/n-junction is provided at at least one surface of the substrate, preferably at at least one of the first side (14) and the second side, characterized in that the junction termination is coated by a passivating coating (26), the passivating coating (26) comprising at least one material selected from the group 0 consisting of an inorganic-organic composite material, parylene, and a phenol resin comprising polymeric particles. A device (10) as described above thus addresses issues of passivation of junction terminations and thus prevents or at least reduces the danger of fatal defects such as unstable device operation caused by changes in film properties, instability, water permeability, permeability of movable ions such as sodium, 5 pinholes and cracks, and aluminum metal disconnection or corrosion due to degradation and stress.
摘要翻译：本发明涉及一种功率半导体器件，其包括具有第一侧（14）和第二侧（16）的衬底（12），所述第一侧（14）和所述第二侧（，其中所述第一侧（14）包括阴极（18），并且其中所述第二侧（14）包括阳极（20），其中提供了p / n结的结终端在所述衬底的至少一个表面上，优选在所述第一侧面（14）和所述第二侧面中的至少一个上，其特征在于，所述结终端被钝化涂层（26）涂覆，所述钝化涂层（26）选自由无机 - 有机复合材料，聚对二甲苯和包含聚合物颗粒的酚醛树脂组成的组0中的至少一种材料。因此，如上所述的器件（10）解决了接线端子钝化的问题并且因此防止或至少减少了致命缺陷的危险，例如由膜性质，不稳定性，透水性，可移动离子渗透性等引起的不稳定器件操作作为钠，5个针孔和裂缝，以及由于退化和压力导致铝金属脱落或腐蚀。

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