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1. 发明申请

WO1997043689A1 THIN FILM DEVICE HAVING COATING FILM, LIQUID CRYSTAL PANEL, ELECTRONIC APPARATUS AND METHOD OF MANUFACTURING THE THIN FILM DEVICE 审中-公开
标题翻译：具有涂膜，薄膜晶体管，电子设备的薄膜装置和制造薄膜装置的方法
公开(公告)号：WO1997043689A1
公开(公告)日：1997-11-20
申请号：PCT/JP1997001618
申请日：1997-05-14
申请人： SEIKO EPSON CORPORATION , YUDASAKA, Ichio , SHIMODA, Tatsuya , KANBE, Sadao , MIYAZAWA, Wakao
发明人： SEIKO EPSON CORPORATION
IPC分类号： G02F01/136
CPC分类号： G02F1/136227 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/66765 , Y10T428/1064 , Y10T428/31663
摘要： Liquid is applied and subjected to a heat treatment to form one thin film among an insulating thin film, a silicon thin film and a conductive thin film constituting a TFT. A substrate is spin-coated with the liquid which contains a thin film component and is supplied from the coating liquid storing part (105) of a spin-coater (102). The substrate to which the coating liquid is applied is subjected to a heat treatment by a heat treatment unit (103) to form a coating film on the substrate. If, further, the coating film is subjected to laser annealing, etc., one of the film qualities, crystallinity, denseness and adhesion is improved. If the coating liquid or resist is applied by an ink-jet method, the utilization efficiency of coating liquid can be improved and, further, a patterned coating film can be formed. A thin film device which is low in cost and has a high throughput can be obtained. By manufacturing TFTs with a manufacturing apparatus having the high utilization efficiency of the coating liquid, the initial investment and the cost of a liquid crystal display are significantly reduced.
摘要翻译：施加液体并进行热处理以在构成TFT的绝缘薄膜，硅薄膜和导电薄膜中形成一个薄膜。用包含薄膜成分的液体旋涂基材，并从旋转涂布机（102）的涂液储存部（105）供给基材。涂布涂布液的基板通过热处理单元（103）进行热处理，以在基板上形成涂膜。此外，如果涂膜经受激光退火等，则膜质量，结晶度，致密性和粘附性之一得到改善。如果通过喷墨法涂布涂布液或抗蚀剂，则可以提高涂布液的利用效率，并且还可以形成图案化的涂膜。可以获得成本低且吞吐量高的薄膜器件。通过制造具有涂布液利用率高的制造装置的TFT，液晶显示器的初始投入和成本显着降低。

2. 发明申请

WO1998015973A1 THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY AND ELECTRONIC EQUIPMENT MADE USING THE SAME 审中-公开
标题翻译：薄膜晶体管和液晶显示器及使用其的电子设备
公开(公告)号：WO1998015973A1
公开(公告)日：1998-04-16
申请号：PCT/JP1997003626
申请日：1997-10-08
申请人： SEIKO EPSON CORPORATION , INOUE, Satoshi , YUDASAKA, Ichio
发明人： SEIKO EPSON CORPORATION
IPC分类号： H01L21/336
CPC分类号： H01L27/124 , G02F1/13454 , H01L23/3672 , H01L29/41725 , H01L29/41733 , H01L29/42384 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： In a TFT which is provided with a channel area opposed to gate electrodes with a gate insulating film inbetween, a source-drain area connected to the channel area, a source-drain wiring layer which is electrically connected to the source-drain area, and a gate wiring layer which is electrically connected to the gate electrodes on the surface side of a substrate, at least one component composed of a conductive or semiconductor film is provided with an expanded section for radiating heat which is formed by expanding the component itself for improving the heat radiating efficiency of the component.
摘要翻译：在设置有与栅电极相对的沟道区域的TFT中，栅极绝缘膜位于其间，连接到沟道区的源极 - 漏极区域，与源极 - 漏极区域电连接的源极 - 漏极布线层以及与基板的表面侧的栅电极电连接的栅极布线层，由导电性或半导体膜构成的至少一个部件设置有用于散热的扩张部，该扩散部通过使部件本身膨胀而形成，以提高组件的散热效率。

3. 发明申请

WO9948339A8 SUBSTRATE FOR PATTERNING THIN FILM AND SURFACE TREATMENT THEREOF 审中-公开
标题翻译：用于图案化薄膜及其表面处理的基底
公开(公告)号：WO9948339A8
公开(公告)日：1999-12-23
申请号：PCT/JP9901327
申请日：1999-03-17
申请人： SEIKO EPSON CORP , SEKI SYUNICHI , KIGUCHI HIROSHI , YUDASAKA ICHIO , MIYAJIMA HIROO
发明人： SEKI SYUNICHI , KIGUCHI HIROSHI , YUDASAKA ICHIO , MIYAJIMA HIROO
IPC分类号： G02B5/20 , G09F9/00 , G09F9/30 , G09F9/33 , H01L27/32 , H01L33/26 , H01L33/42 , H01L33/48 , H01L51/00 , H01L51/40 , H01L51/50 , H01L51/52 , H01L51/56 , H05B33/10 , H05B33/12 , H05B33/14 , H05B33/22 , H01L27/15 , H01L29/78
CPC分类号： H05B33/22 , G02B5/201 , H01L27/322 , H01L27/3246 , H01L51/0005 , H01L51/0014 , H01L51/5284 , H01L2251/558 , H05B33/10 , Y10T428/24802
摘要： A display, such as an EL device having little variation in film thickness between pixels, and a color filter are disclosed. Arranged on a substrate are pixels formed by an ink-jet method in regions to be coated and partitioned by banks so formed as to satisfy the formulae a>d/4, d/2 t0, c>(1/2)x(d/b) where a is the width of the banks, c is the height of the banks, b is the width of the regions to be coated, d is the diameter of droplets of a liquid material for forming a thin film, and t0 is the thickness of the thin film. A method of modifying the surface is a method comprising forming banks of an organic martial on an inorganic bank forming surface, and performing a plasma processing under an excessive fluorine condition, or a method comprising performing oxygen gas plasma processing of a substrate having banks formed of an organic material, and then performing fluorine-based gas plasma processing.
摘要翻译：公开了诸如像素之间的薄膜厚度变化很小的EL器件和滤色器的显示器。在衬底上排列由喷墨方法形成的像素在要被涂布的区域中，并且被形成为满足公式a> d / 4，d / 2 t0，c>（ 1/2）×（d / b）其中a是堤的宽度，c是堤的高度，b是待涂覆区域的宽度，d是用于形成的液体材料的液滴的直径薄膜，t0是薄膜的厚度。对表面进行改性的方法包括：在无机堤形成表面上形成有机物的堤岸，并且在过量的氟条件下进行等离子体处理的方法;或者对具有由有机材料，然后进行基于氟的气体等离子体处理。

4. 发明申请

WO9948338A8 THIN FILM FORMING METHOD, DISPLAY, AND COLOR FILTER 审中-公开
标题翻译：薄膜成型方法，显示和彩色滤光片
公开(公告)号：WO9948338A8
公开(公告)日：1999-12-02
申请号：PCT/JP9901289
申请日：1999-03-16
申请人： SEIKO EPSON CORP , YUDASAKA ICHIO
发明人： YUDASAKA ICHIO
IPC分类号： G09F9/30 , C30B29/64 , G02B5/20 , G02B5/22 , G02F1/1335 , H01L27/32 , H01L51/05 , H01L51/40 , H01L51/50 , H01L51/56 , H05B33/10 , H05B33/22 , G09F9/00
CPC分类号： H01L27/3246 , G02B5/201 , G02B5/223 , H01L27/3283 , H01L51/0005 , H01L51/0022 , H01L51/56 , Y10T428/24157 , Y10T428/24355 , Y10T428/249994
摘要： A method for forming a thin film comprises repeating the step of forming an affinity bank layer (111-11n) of a material (inorganic material such as SiO2) exhibiting an affinity with a thin film material liquid (130) and the step of forming a nonaffinity bank layer (121-12n) of a material (organic material such as resist) exhibiting a nonaffinity with the thin film material liquid (130) so as to form a bank (110) of alternate affinity bank layers and nonaffinity bank layers, filling the space between the banks with the thin film material liquid (130) by an ink-jet method, and performing heat treatment so as to form thin film layers (131-13n) in order. By performing the steps, the cost necessary for affinity control is reduced, and a multilayer thin film with a uniform thickness is formed.
摘要翻译：形成薄膜的方法包括重复形成与薄膜材料液体（130）显示亲和性的材料（诸如SiO 2的无机材料）的亲和层（111-11n）的步骤，以及形成与薄膜材料液体（130）呈现非亲和性的材料（诸如抗蚀剂的有机材料）的非亲和层（121-12n），以形成交替的亲和层和不亲和层的层（110），填充通过喷墨法在薄膜材料液体（130）之间的空间之间进行热处理，从而依次形成薄膜层（131〜13n）。通过执行这些步骤，减少了亲和力控制所需的成本，并且形成了具有均匀厚度的多层薄膜。

5. 发明申请

WO1994018706A1 ACTIVE MATRIX SUBSTRATE AND THIN FILM TRANSISTOR, AND METHOD OF ITS MANUFACTURE 审中-公开
标题翻译：有源矩阵基板和薄膜晶体管及其制造方法
公开(公告)号：WO1994018706A1
公开(公告)日：1994-08-18
申请号：PCT/JP1994000189
申请日：1994-02-09
申请人： SEIKO EPSON CORPORATION , YUDASAKA, Ichio , MATSUO, Minoru , TAKENAKA, Satoshi
发明人： SEIKO EPSON CORPORATION
IPC分类号： H01L29/784
CPC分类号： G02F1/13454 , H01L21/2236 , H01L21/3003 , H01L27/1251 , H01L27/127 , H01L29/66757 , H01L29/78618 , H01L29/78621
摘要： In forming a thin film transistor (620) whose OFF-current characteristics are improved, the source and drain regions (602 and 603) of low impurity concentration are formed. In this process, all the ions (indicated by arrow Ion-1) of around 80 keV energy produced from a mixed gas (doping gas) containing 5 % PH3 and the rest of H2 gas, are implanted into a polycrystalline silicon film (604) so that the concentration of impurities in a range of 3 x 10 /cm to 1 x 10 /cm in terms of P ions. Then all the ions (indicated by arrow Ion-2) of about 20 keV energy produced from a doping gas of pure hydrogen are implanted into a low concentration region (604a) so that the concentration of impurities is in a range of 1 x 10 /cm to 1 x 10 /cm in terms of H ions. After that, the impurities are activated by thermally treating the low concentration region (604a) in a nitrogen atmosphere at a temperature of approximately 300 DEG C for approximately one hour.
摘要翻译：在形成截止电流特性提高的薄膜晶体管（620）的场合，形成低杂质浓度的源区（602,603）。在该过程中，将由含有5％PH 3和其余H 2气体的混合气体（掺杂气体）产生的约80keV能量的所有离子（由箭头Ion-1表示）注入到多晶硅膜（604）中，使得以P +换算为3×10 13 / cm 2至1×10 14 / cm 2范围内的杂质浓度。然后将由纯氢的掺杂气体产生的约20keV能量的所有离子（由箭头Ion-2表示）注入到低浓度区域（604a）中，使得杂质浓度在1×10 5 14> / cm 2至1×10 15 / cm 2。之后，通过在约300℃的氮气气氛中热处理低浓度区域（604a）约1小时使杂质活化。

6. 发明申请

WO1993011455A1 LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING SAME 审中-公开
标题翻译：液晶显示器及其制造方法
公开(公告)号：WO1993011455A1
公开(公告)日：1993-06-10
申请号：PCT/JP1992001562
申请日：1992-11-27
申请人： SEIKO EPSON CORPORATION , MATSUO, Mutsumi , YUDASAKA, Ichio , KANAI, Kiyohiko , NAGASE, Katsumi , INOUE, Takashi
发明人： SEIKO EPSON CORPORATION
IPC分类号： G02F01/136
CPC分类号： G02F1/136209 , G02F1/136227
摘要： As shown in the figure, on a transparent substrate (209) provided with a matrix array, a black matrix (216) consisting of molybdenum silicide layers (216bb...) is present for each of picture element regions (201bb...). These molybdenum silicide layers (216bb) are insulated and separated from data lines (202a, 202b), gate lines (203a, 203b) and molybdenum silicide layers (216ab, 216ba...) disposed therearound on a boundary region with picture element regions disposed therearound, but, conductively connected to the picture element electrode (206) of the picture element region (201bb). Here, the outermost edges of the molybdenum silicide layer (216bb) and the corresponding outermost edges of the picture element electrode (206) coincide with each other.

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