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1. 发明申请

WO2003067597A2 IMPLEMENTATION OF AN INHIBIT DURING SOFT PROGRAMMING TO TIGHTEN AN ERASE VOLTAGE DISTRIBUTION 审中-公开
标题翻译：在软编程期间实施禁止擦除擦除电压分配
公开(公告)号：WO2003067597A2
公开(公告)日：2003-08-14
申请号：PCT/US2003/003710
申请日：2003-02-06
申请人： SANDISK CORPORATION , PAN, Feng , YU,Tat-Kwan, Edgar
发明人： PAN, Feng , YU,Tat-Kwan, Edgar
IPC分类号： G11C
CPC分类号： G11C16/3404
摘要： Methods and apparatus for tightening an erased bit threshold voltage distribution are disclosed. According to one aspect of the present invention, a method for processing erased bits associated with an erased bit distribution which includes an over-erased bit which has a first value that is less than a first threshold voltage value and a bit that has a second value that substantially exceeds a second threshold voltage value includes inhibiting the fast bit. The method also includes applying a soft program pulse to the erased bits such that inhibiting the fast bit substantially prevents the second value from changing and applying the soft program pulse to the over-erased bit substantially causes the first value to increase. In one embodiment, applying the soft program pulse to the over-erased bit substantially causes the first value to increase to a value that is greater than or equal to the first threshold voltage value.
摘要翻译：公开了用于收紧擦除比特阈值电压分布的方法和装置。根据本发明的一个方面，一种用于处理与擦除比特分布相关联的擦除比特的方法，所述擦除比特分布包括具有小于第一阈值电压值的第一值的过擦除比特和具有第二值的比特基本上超过第二阈值电压值的步骤包括禁止所述快速位。该方法还包括将软编程脉冲施加到擦除比特，使得禁止快速比特基本上防止第二值改变并且将软编程脉冲施加到超出擦除比特大体上导致第一值增加。在一个实施例中，将软编程脉冲施加到过度擦除位实质上导致第一值增加到大于或等于第一阈值电压值的值。

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