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1. 发明申请

WO1998007186A1 METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：WO1998007186A1
公开(公告)日：1998-02-19
申请号：PCT/JP1997002731
申请日：1997-08-06
申请人： HITACHI, LTD. , SAITO, Akio , OKA, Hitoshi , TAKAMATSU, Akira , YOSHIDA, Tadanori , TANAKA, Katsuhiko , FURUKAWA, Ryouichi
发明人： HITACHI, LTD.
IPC分类号： H01L21/304
CPC分类号： H01L21/3065
摘要： The contaminant which hinders the improvement of the yield of semiconductor devices becomes finer in size as the packing density of an integrated circuit formed on the surface of a substrate, such as the semiconductor wafer, etc., increases. In addition, it frequently occurs that adhering matters are formed on the internal surface of a film forming device, dry etching device, etc., and, when the matters come off the internal surface, adhere to the surface of a wafer as foreign matters. Therefore, it becomes necessary to clean the surface of the wafer and the internal surface of the device and this cleaning drops the throughput of the device. The above-mentioned problem is solved by controlling the temperatures of the wafer and internal surface of the device, the distribution of plasma, the flow rate and component of a gas, etc., so that the wafer and internal surface of the device can be cleaned simultaneously under the optimum condition.
摘要翻译：随着形成在诸如半导体晶片等的基板的表面上的集成电路的堆积密度的增加，妨碍半导体器件的产量提高的污染物的尺寸变得越来越细小。此外，经常发生在成膜装置，干蚀刻装置等的内表面上形成附着物，并且当物质从内表面脱落时，作为异物附着在晶片的表面上。因此，需要清洁晶片的表面和器件的内表面，并且这种清洁降低了器件的吞吐量。通过控制晶片的温度和器件的内表面，等离子体的分布，气体的流量和分量等来解决上述问题，使得晶片和器件的内表面可以是在最佳条件下同时清洁。

2. 发明申请

WO1998001894A1 METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
标题翻译：制造半导体集成电路器件的方法
公开(公告)号：WO1998001894A1
公开(公告)日：1998-01-15
申请号：PCT/JP1996001847
申请日：1996-07-03
申请人： HITACHI, LTD. , NISHIUCHI, Hiroyo , UCHINO, Toshiyuki , HOSHINO, Masakazu , NOGUCHI, Yuji , YOSHIDA, Tadanori , HOSHINO, Akio
发明人： HITACHI, LTD.
IPC分类号： H01L21/302
CPC分类号： H01L21/02046
摘要： In a method for manufacturing semiconductor integrated circuit devices, a technique for cleaning the inside of a treatment chamber by removing films deposited in the chamber by gas etching. Films deposited in the treatment chamber (2) and on the holding jig (3) of a low pressure CVD device at the time of forming films on the surface of a semiconductor wafer (4) are removed by supplying an etching gas to the chamber (2). During this dry cleaning, the temperature change in the chamber (20) is measured by means of a thermocouple (20) and the measured data are transmitted to a temperature change monitoring section (21). The section (21) decides the timing of the dry cleaning based on the temperature change in the chamber (2). As a result, the inside dry cleaning of the chamber (20) with an etching gas is accurately terminated without using any gas analyzer. After restarting CVD treatment, the films deposited in the chamber (2) and on the jig (3) do not separate from the chamber (2) and jig (3) and do not contaminate the wafer (4), because the films are dry cleaned to a prescribed thickness.
摘要翻译：在制造半导体集成电路器件的方法中，通过气相蚀刻去除沉积在腔室中的膜来清洁处理室内部的技术。通过向半导体晶片（4）的表面供给蚀刻气体，在半导体晶片（4）的表面上形成薄膜时，在处理室（2）和低压CVD装置的保持夹具（3）上沉积的膜被去除 2）。在该干式清洗中，通过热电偶（20）测量室（20）中的温度变化，并将测量数据传送到温度变化监测部分（21）。部分（21）基于室（2）中的温度变化来决定干洗的时间。结果，使用蚀刻气体的室（20）的内部干式清洗在不使用任何气体分析器的情况下被精确地终止。在重新开始CVD处理之后，沉积在室（2）和夹具（3）中的膜不会与室（2）和夹具（3）分离，并且不污染晶片（4），因为膜是干的清洁至规定的厚度。

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