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    • 2. 发明申请
    • ENCAPSULATED METAL MICROTIP MICROPLASMA DEVICES, ARRAYS AND FABRICATION METHODS
    • 包封的金属微型微器械装置,阵列和制造方法
    • WO2012015943A3
    • 2012-04-05
    • PCT/US2011045564
    • 2011-07-27
    • UNIV ILLINOISEDEN J GARYPARK SUNG-JINYOON JEKWONCHUNG BRIAN
    • EDEN J GARYPARK SUNG-JINYOON JEKWONCHUNG BRIAN
    • H05H1/24B01D53/00C01B13/11C02F1/48
    • H01T21/00B01D53/32B01D2257/104B01D2257/91B01D2258/06B01D2259/818C01B13/10C02F1/32C02F1/4608C02F1/46109C02F1/48C02F1/78C02F2001/46133C02F2001/46152C02F2303/04H05H1/2406H05H2001/2418H05H2245/121
    • An embodiment of the invention is a microtip microplasma device having a first metal microtip ( 12a, 50a) opposing a second metal microtip ( 12b, 50b) with a gap ( 16, 48) therebetween. The first and second metal microtips are encapsulated in metal oxide ( 14) that electrically isolates and physically connects the first and second metal microtips. In preferred devices, the first and second metal microtips and metal oxide comprise a monolithic, unitary structure. Arrays (62, 64, 66, 86, 92, 100) can be flexible, can be arranged in stacks, and can be formed into cylinders, for example, for gas and liquid processing devices, air filters and other applications. A preferred method of forming an array of microtip microplasma devices provides a metal mesh with an array of micro openings therein. Electrode areas of the metal mesh are masked leaving planned connecting metal oxide areas of the metal mesh unmasked. Planned connecting metal oxide areas are electrochemically etched to convert the planned connecting metal oxide areas to metal oxide that encapsulates opposing metal microtips therein. The mask is removed. The electrode areas are electrochemically etched to encapsulate the electrode areas in metal oxide.
    • 本发明的一个实施方案是具有与第二金属微尖端(12b,50b)相对并在其间具有间隙(16,48)的第一金属微尖端(12a,50a)的微尖端微等质力装置。 第一和第二金属微尖端封装在金属氧化物(14)中,该金属氧化物电隔离并物理连接第一和第二金属微尖端。 在优选的装置中,第一和第二金属微尖端和金属氧化物构成整体式单一结构。 阵列(62,64,66,86,92,100)可以是柔性的,可以堆叠排列,并且可以形成为圆柱体,例如用于气体和液体处理装置,空气过滤器和其他应用。 形成微尖端微等离子体装置阵列的优选方法提供了其中具有微孔开口阵列的金属网。 金属网的电极区域被掩蔽,留下未被掩蔽的金属网的规划连接金属氧化物区域。 电化学蚀刻计划连接的金属氧化物区域以将所计划的连接金属氧化物区域转换为金属氧化物,其中封装相对的金属微尖端。 面具被删除。 对电极区域进行电化学蚀刻以将电极区域封装在金属氧化物中。