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1. 发明申请

WO2006113158A3 MIM CAPACITOR AND METHOD OF FABRICATING SAME 审中-公开
标题翻译： MIM电容器及其制造方法
公开(公告)号：WO2006113158A3
公开(公告)日：2007-03-01
申请号：PCT/US2006012904
申请日：2006-04-07
申请人： IBM , YANG CHIH-CHANO , CLEVENGER LAWRENCE A , DALTON TIMOTHY J , HSU LOUIS C
发明人： YANG CHIH-CHANO , CLEVENGER LAWRENCE A , DALTON TIMOTHY J , HSU LOUIS C
IPC分类号： H01L21/8242 , H01L21/20
CPC分类号： H01L23/5223 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A damascene MIM capacitor and a method of fabricating the MIM capacitor. The MIM capacitor includes a dielectric layer (140) having top and bottom surfaces; a trench in the dielectric layer, the trench extending from the top surface to the bottom surface of the dielectric layer (140); a first plate of a MIM capacitor comprising a conformal conductive liner (175) formed on all sidewalls and extending along a bottom of the trench, the bottom of the trench coplanar with the bottom surface of the dielectric layer; an insulating layer (190) formed over a top surface of the conformal conductive liner; and a second plate (195) of the MIM capacitor comprising a core conductor in direct physical contact with the insulating layer, the core conductor filling spaces in the trench not filled by the conformal conductive liner and the insulating layer. The method includes forming portions of the MIM capacitor simultaneously with damascene interconnection wires.
摘要翻译：一种镶嵌MIM电容器和一种制造MIM电容器的方法。 MIM电容器包括具有顶表面和底表面的电介质层（140）所述电介质层中的沟槽，所述沟槽从所述介电层（140）的顶表面延伸到所述底表面; MIM电容器的第一板包括形成在所有侧壁上并沿着沟槽的底部延伸的共形导电衬垫（175），沟槽的底部与电介质层的底表面共面; 绝缘层（190），形成在所述共形导电衬垫的顶表面上; 和MIM电容器的第二板（195），其包括与所述绝缘层直接物理接触的芯导体，所述沟槽中的所述芯导体填充空间未被所述共形导电衬垫和所述绝缘层填充。该方法包括与镶嵌互连线同时形成MIM电容器的一部分。

2. 发明申请

WO2006113158A2 MIM CAPACITOR AND METHOD OF FABRICATING SAME 审中-公开
标题翻译： MIM电容器及其制造方法
公开(公告)号：WO2006113158A2
公开(公告)日：2006-10-26
申请号：PCT/US2006/012904
申请日：2006-04-07
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , YANG, Chih-chano , CLEVENGER, Lawrence, A. , DALTON, Timothy, J. , HSU, Louis, C.
发明人： YANG, Chih-chano , CLEVENGER, Lawrence, A. , DALTON, Timothy, J. , HSU, Louis, C.
IPC分类号： H01L21/8242 , H01L21/20
CPC分类号： H01L23/5223 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A damascene MIM capacitor and a method of fabricating the MIM capacitor. The MIN capacitor includes a dielectric layer having top and bottom surfaces; a trench in the dielectric layer, the trench extending from the top surface to the bottom surface of the dielectric layer; a first plate of a MIM capacitor comprising a conformal conductive liner formed on all sidewalls and extending along a bottom of the trench, the bottom of the trench coplanar with the bottom surface of the dielectric layer; an insulating layer formed over a top surface of the conformal conductive liner; and a second plate of the MIM capacitor comprising a core conductor in direct physical contact with the insulating layer, the core conductor filling spaces in the trench not filled by the conformal conductive liner and the insulating layer. The method includes forming portions of the MIM capacitor simultaneously with damascene interconnection wires.
摘要翻译：一种镶嵌MIM电容器和一种制造MIM电容器的方法。 MIN电容器包括具有顶表面和底表面的电介质层; 电介质层中的沟槽，沟槽从电介质层的顶表面延伸到底表面; MIM电容器的第一板包括形成在所有侧壁上并沿着沟槽的底部延伸的共形导电衬垫，沟槽的底部与电介质层的底表面共面; 绝缘层，形成在所述共形导电衬垫的顶表面上; 以及MIM电容器的第二板，其包括与所述绝缘层直接物理接触的芯导体，所述芯导体填充所述沟槽中的未被所述共形导电衬垫和所述绝缘层填充的空间。该方法包括与镶嵌互连线同时形成MIM电容器的部分。

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