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    • 4. 发明申请
    • NOVEL MANUFACTURING DESIGN AND PROCESSING METHODS AND APPARATUS FOR SPUTTERING TARGETS
    • 新型制造设计与处理方法及设备用于溅射目标
    • WO2008134516A2
    • 2008-11-06
    • PCT/US2008/061583
    • 2008-04-25
    • HONEYWELL INTERNATIONAL INC.KARDOKUS, JaninePINTER, MichaelPAYTON, MichaelWU, Steven (chi Tse)AKINS, JaredHORT, Werner
    • KARDOKUS, JaninePINTER, MichaelPAYTON, MichaelWU, Steven (chi Tse)AKINS, JaredHORT, Werner
    • C23C14/34
    • C23C14/3414C22F1/18
    • Sputtering targets having a reduced burn-in time are disclosed that comprise: a) a heat-modified surface material having a substantially uniform crystallographic orientation, wherein at least part of the surface material was melted during heat-treatment, and b) a core material having an average grain size. Sputtering targets are also disclosed that include a heat-modified surface material having network of shallow trenches, alternating rounded peaks and valleys in the surface of the target or a combination thereof, wherein at least part of the surface material was melted during heat-treatment, and a core material having an average grain size. Methods of producing sputtering targets having reduced burn-in times comprises: a) providing a sputtering target comprising a sputtering surface having a sputter material and a crystal lattice, and b) heat-modifying the sputtering surface in order to melt at least part of the surface material and modify the crystal lattice. Methods of producing a sputtering target having a reduced burn-in time are also disclosed comprising: providing a sputtering target having a sputtering surface, wherein the sputtering surface comprises a damage layer, and modifying the sputtering surface by deplating a layer of material, pulsed-plating a layer of material or a combination thereof.
    • 公开了具有减少的老化时间的溅射靶,其包括:a)具有基本上均匀的晶体取向的热改性表面材料,其中至少部分表面材料在热处理期间熔化,以及b)芯材料 具有平均粒度。 还公开了溅射靶,其包括在靶的表面中具有浅沟槽,交替的圆形峰和谷的热改性表面材料或其组合,其中至少部分表面材料在热处理期间熔化, 和具有平均粒径的芯材。 制造具有减少的烧结时间的溅射靶的方法包括:a)提供溅射靶,其包括具有溅射材料和晶格的溅射表面,以及b)对所述溅射表面进行加热改性以熔化至少部分 表面材料并修饰晶格。 还公开了具有降低的烧成时间的溅射靶的制造方法,包括:提供具有溅射表面的溅射靶,其中所述溅射表面包括损伤层,并且通过将材料层去掉, 电镀一层材料或其组合。
    • 10. 发明申请
    • HEMODIALYSIS ARTERIO-VENOUS GRAFT WITH A RING-LIKE DIAMETER-ADJUSTABLE DEVICE
    • 具有环形直径可调节装置的HEMODIALYSIS ARTERIO-VENOUS GRAFT
    • WO2009152488A1
    • 2009-12-17
    • PCT/US2009/047318
    • 2009-06-15
    • THE GENERAL HOSPITAL CORPORATIONWU, Steven
    • WU, Steven
    • A61M1/14
    • A61M1/3655
    • A ring device is integrated externally onto and around a regular hemodialysis arterio-venous graft conduit. The ring device is adjustable to reduce or to normalize (by rebounding) the diameter of the graft, and eventually to change blood flow through the graft. This ring device is designed such that it can be scaled up or down to change its diameter, and simultaneously the diameter of the associated graft prior to and even after its implantation into a patient's arm or leg. Since a hemodialysis arterio-venous graft is usually implanted superficially underneath skin, the device and its adjustable parts can be electively or urgently located and operated from outside by touching and pushing the skin, subcutaneous tissues and the device without a surgical incision. The ring device can be located anywhere within the graft and can function with a single ring or as a set of multiple rings.
    • 环形装置外部集成在常规血液透析动静脉移植导管上和周围。 环形装置是可调整的,以减少或标准化(通过反弹)移植物的直径,并最终改变通过移植物的血液流动。 该环形装置被设计成使得其可以按比例放大或缩小以改变其直径,并且同时将相关移植物的直径植入患者的手臂或腿之前和之后。 由于血液透析动静脉移植物通常植入表皮下表面,所以通过接触和推动皮肤,皮下组织和装置,无需手术切口,该装置及其可调节部件可以从外部选择性地或紧急地定位和操作。 环形装置可以位于移植物内的任何位置,并且可以用单个环或一组多个环来起作用。