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    • 4. 发明申请
    • MICROWAVE DIELECTRIC CERAMICS BASED ON SILVER, NIOBIUM AND TANTALUM OXIDES
    • 基于银,铌和钽氧化物的微波介电陶瓷
    • WO1998003446A1
    • 1998-01-29
    • PCT/SI1997000022
    • 1997-07-11
    • INS¿TITUT JOZ¿EF STEFANVALANT, Matjaz¿SUVOROV, Danilo
    • INS¿TITUT JOZ¿EF STEFAN
    • C04B35/495
    • H01P7/10C04B35/495
    • Microwave dielectric ceramic based on silver, niobium and tantalum oxides with additives (V2O5, Li2O, WO3, Mn2O3 and Bi2O3), characterized in that the contents in mole fractions are as follows: x(Ag2O) = 45-55 mol %, x(Nb2O5) = 22-28 mol %, x(Ta2O5) = 22-28 mol %, x(V2O5) = 0-10 mol %, x(Li2O) = 0-10 mol %, x(WO3) = 0-10 mol %, x(Mn2O3) = 0-10 mol% , and x(Bi2O3) = 0-10 mol %, is manufactured according to the classic method for the manufacturing of ceramic material. The starting materials, i.e. silver oxide (Ag2O), niobium oxide (Nb2O5), tantalum oxide (Ta2O5) and eventual additives are mixed in the proper ratio and calcined for 1-10 hours at a temperature of 1000 DEG C to 1150 DEG C. Thereafter, the calcined powder is formed by using known methods, into products, which are then sintered for 5-10 hours at a temperature of 1150 DEG C - 1250 DEG C in O2 atmosphere. The permittivity ranges between 250 and 380, and at the same time it is possible to adjust tau f in the required range with a precision of +/- 1 ppm/K exclusively by changing the oxide contents. The dielectric losses in the ceramics, being the object of this invention, are low regarding the extraordinarily high permittivity. The quality factor at a working frequency of 1 GHz is 500-700, and at a working frequency of 0.5 GHz 1000-1400.
    • 基于银,铌和钽氧化物与添加剂(V2O5,Li2O,WO3,Mn2O3和Bi2O3)的微波介电陶瓷,其特征在于摩尔分数如下:x(Ag 2 O)= 45-55mol%,x( Nb2O5)= 22-28mol%,x(Ta2O5)= 22-28mol%,x(V2O5)= 0-10mol%,x(Li2O)= 0-10mol%,x(WO3)= 0-10 摩尔%,x(Mn 2 O 3)= 0〜10摩尔%,x(Bi 2 O 3)= 0〜10摩尔%,根据制造陶瓷材料的经典方法制造。 将原料即氧化银(Ag2O),氧化铌(Nb2O5),氧化钽(Ta2O5)和最终添加剂以适当的比例混合,并在1000℃至1150℃的温度下煅烧1-10小时。 此后,将煅烧粉末通过已知方法形成产物,然后在1150℃-1250℃的温度下在O 2气氛中烧结5-10小时。 介电常数介于250和380之间,同时可以通过改变氧化物含量,专门调整精度为+/- 1 ppm / K的所需范围内的tau f。 作为本发明的目的的陶瓷中的介电损耗对于非常高的介电常数是低的。 1 GHz工作频率的品质因数为500-700,工作频率为0.5 GHz,1000-1400。