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    • 1. 发明申请
    • METHOD OF MODIFYING RADIATION CHARACTERISTIC OF AN EXCITED EMITTER
    • 改造激发辐射特性的方法
    • WO2012140184A1
    • 2012-10-18
    • PCT/EP2012/056749
    • 2012-04-13
    • BOEHRINGER INGELHEIM INTERNATIONAL GMBHELSAYAD, KareemHEINZE, KatrinURICH, Alexander
    • ELSAYAD, KareemHEINZE, KatrinURICH, Alexander
    • G01N21/64
    • G02B5/008G01N21/6458G01N21/648
    • A method of modifying a radiation characteristic of an excited emitter (2) and a layer structure (1) therefore, wherein the emitter (2) is placed in the vicinity of a layer structure (1) comprising a metal material, such that the emitter (2) couples to a surface state of the layer structure (1), in particular a surface plasmon polariton, which modifies the radiation characteristic of the emitter (2), wherein the layer structure (1) comprises a metal layer (3) sandwiched between a non-metal superstrate layer (4) and a non-metal substrate layer (5), wherein at least the metal layer (3) and the superstrate layer (4) are separated by a smooth interface (8) with a root mean square roughness equal to or less than 1 nanometer, and wherein the metal layer (3) has a thickness of between 1/100 and 1/20 in relation to an emission wavelength (λ') of the emitter (2).
    • 因此,改变激发发射体(2)和层结构(1)的辐射特性的方法,其中发射极(2)被放置在包括金属材料的层结构(1)附近,使得发射极 (2)耦合到层结构(1)的表面状态,特别是表面等离子体激元,其改变发射器(2)的辐射特性,其中层结构(1)包括夹在中间的金属层(3) 在非金属覆层(4)和非金属基层(5)之间,其中至少金属层(3)和上覆层(4)由平滑界面(8)与根平均分隔开 等于或小于1纳米的方形粗糙度,并且其中金属层(3)相对于发射体(2)的发射波长(θ')具有1/100和1/20之间的厚度。