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1. 发明申请

WO2007150001A8 PYRRO[1,2-B]PYRIDAZINONE COMPOUNDS 审中-公开
标题翻译： PYRRO [1,2-B]吡咯烷酮化合物
公开(公告)号：WO2007150001A8
公开(公告)日：2008-02-28
申请号：PCT/US2007071826
申请日：2007-06-21
申请人： ANADYS PHARMACEUTICALS INC , RUEBSAM FRANK , TRAN MARTIN T , WEBBER STEPHEN E , DRAGOVICH PETER S , LI LIANSHENG , MURPHY DOUGLAS E , KUCERA DAVID JOHN , SUN ZHONGXIANG , TRAN CHINH VIET
发明人： RUEBSAM FRANK , TRAN MARTIN T , WEBBER STEPHEN E , DRAGOVICH PETER S , LI LIANSHENG , MURPHY DOUGLAS E , KUCERA DAVID JOHN , SUN ZHONGXIANG , TRAN CHINH VIET
IPC分类号： C07D487/04 , A61K31/541
CPC分类号： C07D487/04
摘要： The invention is directed to pyrro[l,2-b]pyridazinone compounds and pharmaceutical compositions containing such compounds that are useful in treating infections by hepatitis C virus.
摘要翻译：本发明涉及吡咯并[1,2-b]哒嗪酮化合物和含有可用于治疗丙型肝炎病毒感染的化合物的药物组合物。

2. 发明申请

WO2007150001A1 PYRRO[1,2-B]PYRIDAZINONE COMPOUNDS 审中-公开
标题翻译： PYRRO [1,2-B]吡咯烷酮化合物
公开(公告)号：WO2007150001A1
公开(公告)日：2007-12-27
申请号：PCT/US2007/071826
申请日：2007-06-21
申请人： ANADYS PHARMACEUTICALS, INC. , RUEBSAM, Frank , TRAN, Martin, T. , WEBBER, Stephen, E. , DRAGOVICH, Peter, S. , LI, Liansheng , MURPHY, Douglas, E. , KUCERA, David, John , SUN, Zhongxiang , TRAN, Chinh, Viet
发明人： RUEBSAM, Frank , TRAN, Martin, T. , WEBBER, Stephen, E. , DRAGOVICH, Peter, S. , LI, Liansheng , MURPHY, Douglas, E. , KUCERA, David, John , SUN, Zhongxiang , TRAN, Chinh, Viet
IPC分类号： C07D487/04 , A61K31/541
CPC分类号： C07D487/04
摘要： The invention is directed to pyrro[l,2-b]pyridazinone compounds and pharmaceutical compositions containing such compounds that are useful in treating infections by hepatitis C virus.
摘要翻译：本发明涉及吡咯并[1,2-b]哒嗪酮化合物和含有可用于治疗丙型肝炎病毒感染的化合物的药物组合物。

3. 发明申请

WO2010088338A2 RAPID COOLING OF A SUBSTRATE BY MOTION 审中-公开
标题翻译：通过运动快速冷却基底
公开(公告)号：WO2010088338A2
公开(公告)日：2010-08-05
申请号：PCT/US2010022338
申请日：2010-01-28
申请人： APPLIED MATERIALS INC , ADERHOLD WOLFGANG , TERTITSKI LEONID , HUNTER AARON , TRAN MARTIN
发明人： ADERHOLD WOLFGANG , TERTITSKI LEONID , HUNTER AARON , TRAN MARTIN
CPC分类号： H01L21/67109 , H01L21/67115
摘要： Methods for cooling a substrate are provided herein. In some embodiments, a method for cooling a substrate includes heating a substrate in a process chamber from an introductory temperature to a peak temperature of greater than about 900 degrees Celsius; and cooling the substrate from within about 50 degrees Celsius of the peak temperature by moving the substrate at a rate of at least about 3 millimeters/second in a direction normal to an upper surface of the substrate. In some embodiments, cooling the substrate by moving the substrate further comprises moving the substrate to a first position having a first distance from an upper surface of the process chamber; and subsequently moving the substrate to a second position having a second distance that is further away from the upper surface than the first distance. In some embodiments, a residence time proximate the peak temperature is about 0.6 seconds or less.
摘要翻译：本文提供了冷却基板的方法。在一些实施例中，用于冷却衬底的方法包括将处理室中的衬底从介入温度加热到大于约900摄氏度的峰值温度; 并且通过在垂直于衬底的上表面的方向上以至少约3毫米/秒的速率移动衬底，从而在峰值温度的约50摄氏度内冷却衬底。在一些实施例中，通过移动衬底来冷却衬底还包括将衬底移动到与处理室的上表面具有第一距离的第一位置; 并且随后将所述基板移动到具有比所述第一距离更远离所述上表面的第二距离的第二位置。在一些实施方案中，接近峰值温度的停留时间为约0.6秒或更短。

4. 发明申请

WO2010088338A3 RAPID COOLING OF A SUBSTRATE BY MOTION 审中-公开
公开(公告)号：WO2010088338A3
公开(公告)日：2010-08-05
申请号：PCT/US2010/022338
申请日：2010-01-28
申请人： APPLIED MATERIALS, INC. , ADERHOLD, Wolfgang , TERTITSKI, Leonid , HUNTER, Aaron , TRAN, Martin
发明人： ADERHOLD, Wolfgang , TERTITSKI, Leonid , HUNTER, Aaron , TRAN, Martin
IPC分类号： H01L21/324 , H01L21/683 , H01L21/687
摘要： Methods for cooling a substrate are provided herein. In some embodiments, a method for cooling a substrate includes heating a substrate in a process chamber from an introductory temperature to a peak temperature of greater than about 900 degrees Celsius; and cooling the substrate from within about 50 degrees Celsius of the peak temperature by moving the substrate at a rate of at least about 3 millimeters/second in a direction normal to an upper surface of the substrate. In some embodiments, cooling the substrate by moving the substrate further comprises moving the substrate to a first position having a first distance from an upper surface of the process chamber; and subsequently moving the substrate to a second position having a second distance that is further away from the upper surface than the first distance. In some embodiments, a residence time proximate the peak temperature is about 0.6 seconds or less.

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