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1. 发明申请

WO2004070775A2 LIGHT-INDUCED CAPACITANCE SPECTROSCOPY AND METHOD FOR OBTAINING CARRIER LIFETIME WITH MICRON/NANOMETER SCALE 审中-公开
标题翻译：光诱导电容光谱法和微波/纳米尺度获取载体寿命的方法
公开(公告)号：WO2004070775A2
公开(公告)日：2004-08-19
申请号：PCT/US2003/032156
申请日：2003-10-09
申请人： THE GOVERNMENT OF THE UNITED STATES OF AMERICA as represented by the Secretary of Commerce , BUH, Gyoung Ho , KOPANSKI, Joseph, J. , MARCHIANDO, Jay, F.
发明人： BUH, Gyoung Ho , KOPANSKI, Joseph, J. , MARCHIANDO, Jay, F.
IPC分类号： H01L
CPC分类号： G01R31/2648 , G01R31/265
摘要： Measurement of capacitance and derivative capacitance (dC/dV) on a semiconductor structure under light-pumped condition is documented to measure carrier lifetime with a spatial resolution limited by physical law, depending on material properties (10 nm 100µm). An atomic force microscope or probe-station is used to position a nanometer scale tip over the surface of a semiconductor material to be probed, which is also illuminated with a controlled light source for carrier generation. The capacitance-voltage (C-V) curves or dC/dV versus voltage curves between the tip and the semiconductor are measured under these illuminating conditions with a sensitive capacitance sensor. The unique method for transient spectroscopy incorporates a unique control system and procedure in which capacitance or dC/dV signal are measured as a function of time synchronized to changing the illuminating condition. The capacitance transient can be measured at any dc voltage, but particularly useful information such as carrier density is obtained if the probe is biased at the semiconductor flatband voltage. A simple, one-dimensional model is used to determine, from the measurement of C-V or dC/dV curves, capacitance transients, and frequency-dependent capacitance variance, the carrier recombination rate, and carrier generation and recombination lifetimes in the semiconductor with a microscopic spatial resolution: The limitation of spatial resolution of this measurement is by physical law not by instrumentation. The invention encompasses several methods of acquiring the carrier lifetime on time scales of microseconds and longer with a highly localized probe which are unique with respect to previous practices. The method can easily be incorporated into various commercial instruments such as atomic force microscope, surface profiler, and probe station.
摘要翻译：据介绍，在光泵浦条件下半导体结构上的电容和微分电容（dC / dV）的测量是根据材料特性（10 nm100μm），通过物理定律限制的空间分辨率测量载流子寿命。使用原子力显微镜或探针台将纳米尺度的尖端定位在待探测的半导体材料的表面上，所述半导体材料的表面也被用于载体产生的受控光源照射。在敏感电容传感器的这些照明条件下测量尖端和半导体之间的电容电压（C-V）曲线或dC / dV与电压曲线。用于瞬态光谱的独特方法包括独特的控制系统和程序，其中测量电容或dC / dV信号作为与改变照明条件同步的时间的函数。电容瞬态可以在任何直流电压下测量，但是如果探针偏置在半导体平带电压下，则可获得特别有用的信息，例如载流子密度。使用简单的一维模型，从CV或dC / dV曲线的测量中确定电容瞬变和频率依赖电容方差，载流子复合速率以及半导体中的载流子生成和复合寿命空间分辨率：这种测量的空间分辨率的限制是物理规律不是通过仪器。本发明包括几种采用高度局部化的探针在几秒的时间尺度上获得载流子寿命的方法，该探针对于以前的实践是独特的。该方法可以容易地并入各种商业仪器，如原子力显微镜，表面轮廓仪和探测台。

2. 发明申请

WO2003006367A1 MINIMIZING SPATIAL-DISPERSION-INDUCED BIREFRINGENCE 审中-公开
标题翻译：最小化空间分散诱导的BIREFRINGENCE
公开(公告)号：WO2003006367A1
公开(公告)日：2003-01-23
申请号：PCT/US2002/021460
申请日：2002-07-09
申请人： THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY OF COMMERCE
发明人： BURNETT, John, H. , LEVINE, Zachary, H. , SHIRLEY, Eric, L.
IPC分类号： C01B9/08
CPC分类号： C01B9/08 , C01F11/22 , C01P2002/50 , C01P2006/60 , G02B1/02 , G02B5/3091
摘要： A composition formed from Group II fluorides in which the composition has little or no intrinsic birefringence at a selected wavelength. The composition is a mixed solid solution of CaF 2 with a second crystal of SrF 2 or BaF 2 . The resulting composition is in the form of Ca 1-x Sr x F 2 or Ca 1-x Ba x F 2 , or a combination of SrF 2 and BaF 2 , in the form of Ca 1-x-y Sr x Ba y F 2 . The specific form of the composition that effectively nulls out the intrinsic birefringence at a selected wavelength within the UV range is determined in one preferred method from the magnitudes of the intrinsic birefringences of the components, CaF 2 , SrF 2 , and BaF 2 .
摘要翻译：由II组氟化物形成的组合物，其中所述组合物在所选波长处具有很少的或没有固有的双折射。该组合物是CaF 2与SrF 2或BaF 2的第二晶体的混合固溶体。所得组合物为Ca1-xSrxF2或Ca1-xBaxF2的形式，或者是Ca1-x-ySrxBayF2形式的SrF 2和BaF 2的组合。在一个优选的方法中，根据组分CaF 2，SrF 2和BaF 2的固有双折射的大小来确定在UV范围内有效地消除选定波长处的固有双折射的组合物的具体形式。

3. 发明申请

WO2007075179A3 BACTERIOPHAGE-QUANTUM DOT (PHAGE-QD) NANOCOMPLEX TO DETECT BIOLOGICAL TARGETS IN CLINICAL AND ENVIRONMENTAL ISOLATES 审中-公开
公开(公告)号：WO2007075179A3
公开(公告)日：2007-07-05
申请号：PCT/US2006/005537
申请日：2006-02-16
申请人： THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY, DEPARTMENT OF HEALTH AND HUMAN SERVICES , THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY OF COMMERCE , HWANG, Jeeseong , EDGAR, Rotem , MCKINSTRY, Michael , GIULIAN, Gary , MERRIL, Carl , ADHYA, Sankar
发明人： HWANG, Jeeseong , EDGAR, Rotem , MCKINSTRY, Michael , GIULIAN, Gary , MERRIL, Carl , ADHYA, Sankar
IPC分类号： C12N7/00 , G01N33/569 , G01N33/58 , A61K35/76
摘要： The invention is related to a non-biotinylated bacteriophage that comprises a nucleic acid sequence encoding a biotinylation domain; a complex that comprises a biotinylated bacteriophage and a biotin-specif ic ligand- conjugated biocon jugate; and a method of detecting a bacterial cell in a sample comprising contacting the sample with a non-biotinylated bacteriophage that comprises a nucleic acid sequence encoding a biotinylation domain, wherein the bacteriophage is specific to the bacterial cell.

4. 发明申请

WO2020162993A1 SUPERCONDUCTOR SWITCH 审中-公开
公开(公告)号：WO2020162993A1
公开(公告)日：2020-08-13
申请号：PCT/US2019/057990
申请日：2019-10-25
申请人： PSIQUANTUM CORP. , THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE
发明人： NAJAFI, Faraz , JIN STONE, Qiaodan , MCCAUGHAN, Adam, Nykoruk
IPC分类号： H01L39/16 , G11C11/44 , H01L39/10 , H01L39/18
摘要： The various embodiments described herein include methods, devices, and systems for operating superconducting circuits. In one aspect, an electric circuit includes: (1) a superconductor component having a first terminal at a first end and a second terminal at a second end; (2) a gate component thermally-coupled to the superconductor component at a first location between the first terminal and the second terminal, where the gate component is thermally-coupled via a first section of the gate component; and where the gate component has a smallest width at the first section so as to focus resistive heating toward the superconductor component.

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