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    • 6. 发明申请
    • SILICON NITRIDE SINTER AND PROCESS FOR PRODUCING THE SAME
    • 硅氮化硅及其制造方法
    • WO1996020144A1
    • 1996-07-04
    • PCT/JP1995002679
    • 1995-12-26
    • SUMITOMO ELECTRIC INDUSTRIES, LTD.NAKAHATA, SeijiTAKEUCHI, HisaoYAMAKAWA, Akira
    • SUMITOMO ELECTRIC INDUSTRIES, LTD.
    • C04B35/591
    • C04B35/591
    • A dense, high-strength silicon nitride (Si3N4) sinter produced by reaction sintering with a shortened nitridation time and an improved productivity. The sinter has an unpaired electron concentration of 10 -10 /cm and is obtained by the reaction sintering of a silicon powder having an unpaired electron concentration of 10 -10 /cm and obtained by annealing a commercially available silicon powder in an atmosphere of other than nitrogen at a temperature of 300-800 DEG C for 3-5 hours. The production process comprises conducting the reaction sintering by mixing the starting powder with a sintering aid and a nitrogen pore forming agent comprising an element having a valency of, especially, +1, to +3 and satisfying the following relationship between RM (the radius of covalent bond of the element) and RSi (the radius of covalent bond of silicon): (RM-RSi)/RSi
    • 通过反应烧结制备的致密的高强度氮化硅(Si 3 N 4)烧结体,其具有缩短的氮化时间和提高的生产率。 该烧结体具有不成对的电子浓度为10 15 -10 21 / cm 3,并且是通过使不成对电子浓度为10 15 -10 20 / cm 3的硅粉的反应烧结获得的 3,通过在氮气气氛下在300-800℃的温度下将市售的硅粉末退火3-5小时获得。 该制备方法包括通过将起始粉末与烧结助剂混合进行反应烧结,以及包含具有特别是+1至+3的元素的氮成孔剂,并满足RM(半径 元素的共价键)和RSi(硅的共价键的半径):(RM-RSi)/ RSi <0.5。
    • 7. 发明申请
    • POROUS CERAMIC AND PROCESS FOR PRODUCING THE SAME
    • 多孔陶瓷及其制造方法
    • WO1994027929A1
    • 1994-12-08
    • PCT/JP1994000803
    • 1994-05-19
    • SUMITOMO ELECTRIC INDUSTRIES, LTD.TAKEUCHI, HisaoNAKAHATA, SeijiMATSUURA, TakahiroKAWAI, Chihiro
    • SUMITOMO ELECTRIC INDUSTRIES, LTD.
    • C04B38/00
    • C04B38/00B01D39/2075
    • A porous ceramic combining a high porosity with a high strength and serving as a catalyst support or a filter for removing foreign matter from fluid. A porous ceramic having a porosity of 30 % or above comprises mainly columnar ceramic particles having an aspect ratio of 3 or above. In particular, a porous silicon nitride ceramic comprises mainly Si3N4 wherein prismatic beta -Si3N4 particles amount to at least 60 % of the total amount of silicon nitride particles and further contains at least one compound of a rare earth element in an amount of 1-20 vol.% in terms of the oxide of the rare earth element. The silicon nitride ceramic may further contain at least one compound of a group IIa, group IIIb or transition metal element in an amount of at most 5 vol.% in terms of the oxide of the element. The porous silicon nitride ceramic is produced by heat-treating a molding of a powdery mixture comprising powdery silicon nitride and a powdery rare earth compound at 1,500 DEG C or above in a nitrogen-containing atmosphere.
    • 一种多孔陶瓷,其结合高孔隙率和高强度并用作催化剂载体或用于从流体中除去异物的过滤器。 孔隙率为30%以上的多孔陶瓷主要包括纵横比为3以上的柱状陶瓷粒子。 特别地,多孔氮化硅陶瓷主要包括Si 3 N 4,其中棱柱形β-Si 3 N 4颗粒占氮化硅颗粒总量的至少60%,并且还含有至少一种量为1-20的稀土元素化合物 以稀土元素的氧化物计为体积%。 氮化硅陶瓷可以进一步包含至少一种元素氧化物的至少一种IIa族,IIIb族或过渡金属元素的化合物,其量为至多5vol。%。 多孔氮化硅陶瓷通过在含氮气氛中在1500℃以上的粉末状氮化硅和粉末状稀土类化合物的粉末状混合物的成型进行热处理来制造。