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    • 1. 发明申请
    • PHASE SHIFTER, COUPLER AND METHODS FOR THEIR PRODUCTION
    • 相变器,联轴器及其生产方法
    • WO2012103823A3
    • 2013-02-28
    • PCT/CN2012072298
    • 2012-03-14
    • HUAWEI TECH CO LTDUNIV SHANGHAI JIAOTONGXU MUGAO LEISU YIKAILI FEI
    • XU MUGAO LEISU YIKAILI FEI
    • H01P1/18
    • G02F1/065
    • A phase shifter, a coupler and methods for their production are provided by the embodiments of the present invention, which relates to the field of photonics, wherein the methods can reduce optical damage, improve the utilization ratio of the light field energy, and improve the response speed of device. The phase shifter comprises: a base silicon layer and an insulated layer covering the base silicon layer; a top silicon layer covering the insulated layer, wherein the top silicon layer includes two isolation grooves, which are separated by a common groove wall with each other, wherein the common groove wall is a waveguide, and the height of the waveguide is higher than the outside groove walls of the two isolation grooves; a first cathode metal layer and a second cathode metal layer covering two outside groove walls of the two isolation grooves respectively; an electro-optic polymer material layer covering the first cathode metal layer,the second cathode metal layer and the top silicon layer; an upper electrode formed on the top of the electro-optic polymer material layer, and the slits formed between the upper electrode and the waveguide and filled by the electro-optic polymer material layer; a second protect layer covering the upper electrode and the electro-optic polymer material layer. The embodiments of the present invention are applied to the electro-optic phase shift.
    • 本发明涉及光子学领域的实施例提供了一种移相器,耦合器及其制造方法,其中所述方法可以减少光学损伤,提高光场能量的利用率,并改善 设备的响应速度。 所述移相器包括:基底硅层和覆盖所述基底硅层的绝缘层; 覆盖所述绝缘层的顶部硅层,其中所述顶部硅层包括两个隔离沟槽,所述两个隔离槽由共同的沟槽壁彼此隔开,其中所述公共槽壁是波导,并且所述波导的高度高于 两个隔离槽的外槽壁; 分别覆盖两个隔离槽的两个外槽壁的第一阴极金属层和第二阴极金属层; 覆盖第一阴极金属层,第二阴极金属层和顶部硅层的电光聚合物材料层; 形成在电光聚合物材料层的顶部上的上电极和形成在上电极和波导之间并由电光聚合物材料层填充的狭缝; 覆盖上电极和电光聚合物材料层的第二保护层。 本发明的实施例应用于电光相移。