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1. 发明申请

WO2005022057A3 USE OF WELDS FOR THERMAL AND MECHANICAL CONNECTIONS IN CRYOGENIC VACUUM VESSELS 审中-公开
公开(公告)号：WO2005022057A3
公开(公告)日：2005-03-10
申请号：PCT/US2004/026796
申请日：2004-08-18
申请人： E.I. DUPONT DE NEMOURS AND COMPANY , CARTER, Charles, F., III , MCCAMBRIDGE, James, D. , SMALL, Robert, J.
发明人： CARTER, Charles, F., III , MCCAMBRIDGE, James, D. , SMALL, Robert, J.
IPC分类号： F25D19/00
摘要： This invention relates to the use of welds to provide improved thermal and mechanical connections in a cryogenic vacuum vessel. Welds provide strong, reliable connections in this environment.

2. 发明申请

WO1998004646A1 CHEMICAL MECHANICAL POLISHING COMPOSITION AND PROCESS 审中-公开
标题翻译：化学机械抛光组合物和工艺
公开(公告)号：WO1998004646A1
公开(公告)日：1998-02-05
申请号：PCT/US1997012220
申请日：1997-07-21
申请人： EKC TECHNOLOGY, INC. , SMALL, Robert, J. , McGHEE, Laurence , MALONEY, David, John , PETERSON, Mary, Louise
发明人： EKC TECHNOLOGY, INC.
IPC分类号： C09K13/00
CPC分类号： C09G1/02 , C09K13/00 , C09K13/06 , C23F3/00 , H01L21/02074 , H01L21/3212 , Y10S438/959
摘要： A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compounds adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material. The pH of the slurry and the selectively oxidizing and reducing compound is adjusted to provide the differential removal of the metal and the dielectric material. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material, and an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid.
摘要翻译：用于化学机械抛光的组合物包括浆料。在组合物中提供足量的选择性氧化和还原化合物以产生金属和电介质材料的差别去除。 pH调节化合物调节组合物的pH以提供使得选择性氧化和还原化合物提供金属和电介质材料的差别去除的pH。用于化学机械抛光的组合物通过包括有效量的羟胺化合物，过硫酸铵，作为过氧化氢的间接来源的化合物，过乙酸或高碘酸的化学机械抛光来改善。用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和电介质材料的机械去除。施加选择性氧化还原化合物以产生金属和电介质材料的微分去除。调节浆料和选择性氧化和还原化合物的pH以提供金属和电介质材料的差别去除。一种用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和介电材料的机械去除，以及用于化学机械抛光羟胺化合物，过硫酸铵，化合物为过氧化氢的间接来源，过乙酸或高碘酸。

3. 发明申请

WO2007056002A1 FREE RADICAL-FORMING ACTIVATOR ATTACHED TO SOLID AND USED TO ENHANCE CMP FORMULATIONS 审中-公开
标题翻译：连接固体并用于增强CMP制剂的免费成型激活剂
公开(公告)号：WO2007056002A1
公开(公告)日：2007-05-18
申请号：PCT/US2006/042631
申请日：2006-11-01
申请人： DUPONT AIR PRODUCTS NANOMATERIALS LLC , SIDDIQUI, Junaid, Ahmed , SMALL, Robert, J. , CASTILLO, Daniel, Hernandez
发明人： SIDDIQUI, Junaid, Ahmed , SMALL, Robert, J. , CASTILLO, Daniel, Hernandez
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321
CPC分类号： C09G1/02 , C03C19/00 , C09K3/1463 , C23F3/04 , G11B5/3163 , G11B5/3169 , H01L21/3212
摘要： A CMP composition having: a fluid comprising water and at least one oxidizing compound that produces free radicals when contacted with an activator; and a plurality of particles having a surface and comprising at least one activator selected from ions or compounds of Cu, Fe, Mn, Ti, or mixtures thereof disposed on said surface, wherein at least a portion of said surface comprises a stabilizer. Preferred stabilizers are selected from inorganic oxygen-containing compounds of B, W, Al, and P, for example borate, tungstate, aluminate, and phosphate. The activators are preferably ions of Cu or Fe. Surprisingly, as little as 0.2 ppm and 12 ppm of activator is useful, if the activator-containing particles are suspended in the fluid as a slurry. Advantageously, certain organic acids, and especially dihydroxy enolic acids, are included in an amount less than about 4000 ppm. Advantageously, activator is coated onto abrasive particles after the particles have been coated with stabilizer.
摘要翻译：一种CMP组合物，其具有：包含水和至少一种当与活化剂接触时产生自由基的氧化化合物的流体; 以及多个具有表面并且包含至少一种选自Cu，Fe，Mn，Ti或其混合物的离子或化合物的活化剂的颗粒，其中所述表面的至少一部分包含稳定剂。优选的稳定剂选自B，W，Al和P的无机含氧化合物，例如硼酸盐，钨酸盐，铝酸盐和磷酸盐。活化剂优选为Cu或Fe的离子。令人惊奇的是，只要0.2ppm和12ppm的活化剂是有用的，如果含活化剂的颗粒作为浆料悬浮在流体中。有利地，某些有机酸，特别是二羟基烯醇酸的含量小于约4000ppm。有利地，在颗粒已经用稳定剂涂覆之后，将活化剂涂覆到磨料颗粒上。

4. 发明申请

WO2006088737A2 SEMICONDUCTOR CLEANING 审中-公开
公开(公告)号：WO2006088737A2
公开(公告)日：2006-08-24
申请号：PCT/US2006004774
申请日：2006-02-13
申请人： SMALL ROBERT J
发明人： SMALL ROBERT J
IPC分类号： C11D11/00
CPC分类号： C11D11/0047 , C11D1/385 , C11D1/62 , C11D3/26 , C11D3/36 , C11D7/32 , C11D7/36
摘要： A method of cleaning a substrate includes contacting a surface of a semiconductor substrate with a composition comprising an ionic liquid. Another method of cleaning a substrate includes contacting a surface of a semiconductor substrate with a composition comprising a superacid. The semiconductor substrate may be a wafer.
摘要翻译：清洁衬底的方法包括使半导体衬底的表面与包含离子液体的组合物接触。清洁衬底的另一种方法包括使半导体衬底的表面与包含超强酸的组合物接触。半导体衬底可以是晶片。

5. 发明申请

WO2005066325A2 CLEANER COMPOSITIONS CONTAINING FREE RADICAL QUENCHERS 审中-公开
标题翻译：含有自由放射性元素的清洁剂组合物
公开(公告)号：WO2005066325A2
公开(公告)日：2005-07-21
申请号：PCT/US2004/043307
申请日：2004-12-23
申请人： EKC TECHNOLOGY, INC. , SMALL, Robert, J. , HAYDEN, Christopher, G.
发明人： SMALL, Robert, J. , HAYDEN, Christopher, G.
IPC分类号： C11D11/00
CPC分类号： H01L21/02071 , C09G1/02 , C11D3/0073 , C11D3/0084 , C11D3/02 , C11D3/042 , C11D3/1213 , C11D3/201 , C11D3/2017 , C11D3/2034 , C11D3/2044 , C11D3/2058 , C11D3/2086 , C11D3/349 , C11D3/3947 , C11D7/02 , C11D7/08 , C11D7/20 , C11D7/261 , C11D7/265 , C11D7/267 , C11D7/34 , C11D11/0047 , H01L21/02074 , H01L21/3212
摘要： The invention relates to a method of cleaning the surface of a substrate to remove post-etch residue or post chemical mechanical polishing residues from the surface of a substrate. Specifically, the present invention relates to a method of post-CMP or post-etch cleaning. The method involves contacting the surface of a substrate with a CMP composition or an etching composition, that contains free radicals, and subsequently contacting the surface of the substrate with a composition that comprises a free radical quencher.
摘要翻译：本发明涉及一种清洁基材表面以从衬底的表面去除蚀刻后残留物或后化学机械抛光残余物的方法。具体地说，本发明涉及后CMP或蚀刻后清洗的方法。该方法包括使基材的表面与含有自由基的CMP组合物或蚀刻组合物接触，随后使基材的表面与包含自由基猝灭剂的组合物接触。

6. 发明申请

WO2005043250A2 PROCESS FOR THE USE OF BIS-CHOLINE AND TRIS-CHOLINE IN THE CLEANING OF QUARTZ-COATED POLYSILICON AND OTHER MATERIALS 审中-公开
标题翻译：双氯硅烷和三氯硅烷在清洁涂层的多晶硅和其他材料中的应用方法
公开(公告)号：WO2005043250A2
公开(公告)日：2005-05-12
申请号：PCT/US2004/035148
申请日：2004-10-22
申请人： EKC TECHNOLOGY, INC. , CHARM, Richard, William , ZHOU, De-Ling , SMALL, Robert, J. , LEE, Shihying
发明人： CHARM, Richard, William , ZHOU, De-Ling , SMALL, Robert, J. , LEE, Shihying
IPC分类号： G03F7/42
CPC分类号： G03F7/425 , C11D7/3218 , C11D7/3281 , C11D7/34 , C11D11/0047 , G03F7/426
摘要： A new cleaning chemistry based on bis-choline and tris-choline compounds, such as their hydroxides, is provided in order to address the removal of photoresist and flux while minimizing any etching of the substrate.
摘要翻译：提供了基于双胆碱和三胆碱化合物（例如它们的氢氧化物）的新的清洁化学品，以便解决光刻胶和助熔剂的去除，同时最小化衬底的任何蚀刻。

7. 发明申请

WO2005022057A2 USE OF WELDS FOR THERMAL AND MECHANICAL CONNECTIONS IN CRYOGENIC VACUUM VESSELS 审中-公开
标题翻译：用于低温真空容器中的热和机械连接的焊接
公开(公告)号：WO2005022057A2
公开(公告)日：2005-03-10
申请号：PCT/US2004026796
申请日：2004-08-18
申请人： DU PONT , CARTER CHARLES F III , MCCAMBRIDGE JAMES D , SMALL ROBERT J
发明人： CARTER CHARLES F III , MCCAMBRIDGE JAMES D , SMALL ROBERT J
IPC分类号： F25D19/00 , F25D
CPC分类号： F25D19/006
摘要： This invention relates to the use of welds to provide improved thermal and mechanical connections in a cryogenic vacuum vessel. Welds provide strong, reliable connections in this environment.
摘要翻译：本发明涉及使用焊接在低温真空容器中提供改进的热和机械连接。在这种环境下，焊缝提供强大，可靠的连接。

8. 发明申请

WO2006088737A3 SEMICONDUCTOR CLEANING 审中-公开
公开(公告)号：WO2006088737A3
公开(公告)日：2006-08-24
申请号：PCT/US2006/004774
申请日：2006-02-13
申请人： SMALL, Robert, J.
发明人： SMALL, Robert, J.
IPC分类号： C11D11/00
摘要： A method of cleaning a substrate includes contacting a surface of a semiconductor substrate with a composition comprising an ionic liquid. Another method of cleaning a substrate includes contacting a surface of a semiconductor substrate with a composition comprising a superacid. The semiconductor substrate may be a wafer.

9. 发明申请

WO2005042658A1 ABRASIVE-FREE CHE.MICAL MECHANICAL POLISHING COMPOSITION AND POLISHING PROCESS CONTAINING SAME 审中-公开
标题翻译：无磨损机械机械抛光组合物和包含其的抛光工艺
公开(公告)号：WO2005042658A1
公开(公告)日：2005-05-12
申请号：PCT/US2004/034563
申请日：2004-10-21
申请人： EKC TECHNOLOGY, INC. , YAO, Li , SMALL, Robert, J.
发明人： YAO, Li , SMALL, Robert, J.
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , C09G1/04 , C23F3/00 , H01L21/3212
摘要： The present invention relates generally to a chemical mechanical polishing composition for polishing a metal, a metal oxide, and/or a metal nitride layer of a substrate, which composition is substantially free of abrasive particles and comprises: a hydroxylamine derivative; a corrosion inhibitor; and water, wherein water comprises, the majority of the composition. The composition may optionally include, or alternately be substantially free from, one or more of the following: hydroxylamine, acid and/or bas(,. to adjust pH, two carbon atom linkage alkanolamine compounds, quaternary ammonium salts, chelating agents, organic solvents, non-hydroxyl-containing amine compounds, surfactants, additional oxidizing agents, and non-abrasive additives. A process for chemically mechanically polishing a substrate using such a polishing composition is also provided herein.
摘要翻译：本发明一般涉及用于抛光基材的金属，金属氧化物和/或金属氮化物层的化学机械抛光组合物，该组合物基本上不含磨料颗粒，并且包括：羟胺衍生物; 腐蚀抑制剂; 和水，其中水包含大部分组合物。组合物可以任选地包括或替代地基本上不含以下的一种或多种：羟胺，酸和/或碱（调节pH，两个碳原子键链烷醇胺化合物，季铵盐，螯合剂，有机溶剂非羟基胺化合物，表面活性剂，附加氧化剂和非研磨性添加剂。本文还提供使用这种抛光组合物对基材进行化学机械研磨的方法。

10. 发明申请

WO2005066325A3 CLEANER COMPOSITIONS CONTAINING FREE RADICAL QUENCHERS 审中-公开
标题翻译：含有自由放射性元素的清洁剂组合物
公开(公告)号：WO2005066325A3
公开(公告)日：2006-03-30
申请号：PCT/US2004043307
申请日：2004-12-23
申请人： EKC TECHNOLOGY INC , SMALL ROBERT J , HAYDEN CHRISTOPHER G
发明人： SMALL ROBERT J , HAYDEN CHRISTOPHER G
IPC分类号： C11D11/00 , C09G1/02 , C11D3/00 , C11D3/02 , C11D3/12 , C11D3/20 , C11D3/34 , C11D3/39 , C11D7/00 , C11D7/02 , C11D7/08 , C11D7/20 , C11D7/26 , C11D7/34 , H01L21/02 , H01L21/306 , H01L21/3213
CPC分类号： H01L21/02071 , C09G1/02 , C11D3/0073 , C11D3/0084 , C11D3/02 , C11D3/042 , C11D3/1213 , C11D3/201 , C11D3/2017 , C11D3/2034 , C11D3/2044 , C11D3/2058 , C11D3/2086 , C11D3/349 , C11D3/3947 , C11D7/02 , C11D7/08 , C11D7/20 , C11D7/261 , C11D7/265 , C11D7/267 , C11D7/34 , C11D11/0047 , H01L21/02074 , H01L21/3212
摘要： The invention relates to a method of cleaning the surface of a substrate to remove post-etch residue or post chemical mechanical polishing residues from the surface of a substrate. Specifically, the present invention relates to a method of post-CMP or post-etch cleaning. The method involves contacting the surface of a substrate with a CMP composition or an etching composition, that contains free radicals, and subsequently contacting the surface of the substrate with a composition that comprises a free radical quencher.
摘要翻译：本发明涉及一种清洁基材表面以从衬底的表面去除蚀刻后残留物或后化学机械抛光残余物的方法。具体地说，本发明涉及后CMP或蚀刻后清洗的方法。该方法包括使基材的表面与含有自由基的CMP组合物或蚀刻组合物接触，随后使基材的表面与包含自由基猝灭剂的组合物接触。

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