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    • 3. 发明申请
    • FIELD EMISSION BACKPLATE
    • 现场排放背板
    • WO2003015117A1
    • 2003-02-20
    • PCT/GB2002/003691
    • 2002-08-09
    • THE UNIVERSITY COURT OF THE UNIVERSITY OF DUNDEEROSE, Mervyn, JohnSILVA, RaviSHANNON, John
    • ROSE, Mervyn, JohnSILVA, RaviSHANNON, John
    • H01J1/304
    • H01L21/02686H01J1/3042H01J9/025H01L21/2026
    • A field emission backplate 12g formed by laser crystallising an area of amorphous semiconductor based material. Emitter sites 20g result from the rough surface texture caused by the crystallisation process. The crystallisation may be localised using laser interferometry, and profiled emitter tips (20j) grown on the localised crystalline areas (18j) Such backplates can be used in field emission devices emitting into either a vacuum or a wide bad gap light emitting polymer. Furthermore, a backplate (12m) having self aligned gates can be formed by depositing an insulator layer (38m) and metal layer (40m) over the emitter tips, removing the top of the metal layer and etching away the insulator, leaving each tip surrounded by a metal rim. A planarising agent (39n) can be used to refine this process.
    • 通过激光结晶非晶半导体基材料的区域形成的场致发射背板12g。 发射器位置20g是由结晶过程引起的粗糙表面纹理造成的。 结晶可以使用激光干涉测量法定位,并且在局部结晶区域(18j)上生长的成型的发射极尖端(20j)。这种背板可以用于发射到真空或宽的不良间隙发光聚合物的场致发射器件中。 此外,具有自对准栅极的背板(12m)可以通过在发射极尖端上沉积绝缘体层(38m)和金属层(40m)而形成,去除金属层的顶部并蚀刻绝缘体,留下每个尖端包围 通过金属边缘。 平面化剂(39n)可用于改进此过程。