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    • 6. 发明申请
    • EXPOSURE AND PATTERNING PROCESS FOR FORMING MULTI-LAYER RESIST STRUCTURES
    • 形成多层抗蚀结构的曝光和图案化工艺
    • WO2008035059A3
    • 2008-07-03
    • PCT/GB2007003536
    • 2007-09-19
    • POLYMER VISION LTDAFSHAR-HANAEE NASER
    • AFSHAR-HANAEE NASER
    • G03F7/00G03F7/095G03F7/20
    • G03F7/0035G03F7/095G03F7/2022
    • A method for forming on a substrate a multi-layer resist structure having a controlled and pre-determined amount of undercut or overcut according to whether a positive or negative tone resist is used. The amount of undercut or overcut is controlled by means of a predetermined level of pre-exposure of each underlying resist layer prior to deposition of the next resist layer and the final patterning of the top resist layer. The multi-layer resist is then developed to remove resist in a controlled manner from each layer according to the degree of exposure of the resist. Using the technique, multi-layer resist structures having very fine sub-micron details may be formed. Multi-layer positive tone resist structures can be employed as a mask and combined with metal deposition and lift-off techniques for fabricating very high resolution metallic features.
    • 一种用于在衬底上形成多层抗蚀剂结构的方法,所述多层抗蚀剂结构根据是否使用正或负色调抗蚀剂而具有受控和预定量的底切或过切。 借助于在下一个抗蚀剂层的沉积和顶部抗蚀剂层的最终图案化之前每个下面的抗蚀剂层的预先曝光的预定水平来控制底切或过切的量。 然后显影多层抗蚀剂以根据抗蚀剂的曝光程度以受控的方式从每个层去除抗蚀剂。 使用该技术,可以形成具有非常精细的亚微米细节的多层光刻胶结构。 可以采用多层正色调抗蚀剂结构作为掩模,并结合金属沉积和剥离技术来制造非常高分辨率的金属特征。