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1. 发明申请

WO2012152435A1 METHOD AND APPARATUS FOR REMOVING CONTAMINANTS FROM METALLURGICAL SILICON 审中-公开
标题翻译：从冶金硅中去除污染物的方法和装置
公开(公告)号：WO2012152435A1
公开(公告)日：2012-11-15
申请号：PCT/EP2012/001983
申请日：2012-05-08
申请人： CENTROTHERM PHOTOVOLTAICS AG , PAROUS, Louis, C. , WEBER, Frank
发明人： PAROUS, Louis, C. , WEBER, Frank
IPC分类号： B22F9/00 , C01B33/037
CPC分类号： C01B33/037
摘要： A method and an apparatus for removing contaminants from metallurgical silicon are disclosed. In the method, metallurgical silicon is molten and subsequently introduced into a process chamber, wherein the molten silicon upon introduction into the process chamber is atomized via a gas flow. The thus atomized molten silicon subsequently falls to the floor of the process chamber. A reactive atmosphere is generated in the process chamber, wherein the reactive atmosphere contains a process gas, which reacts with contaminants in the molten silicon, in order to remove containments from the molten silicon. The apparatus comprises a melting unit connected via a conduit to a process chamber. Furthermore, a gas circulation unit is provided for circulating gas evacuated from the process chamber through a gas conditioning unit for cleaning the gas and then back into the process chamber via a gas inlet, which is used for atomizing molten silicon exiting the conduit between the melting unit and the process chamber.
摘要翻译：公开了一种用于从冶金硅中除去污染物的方法和装置。在该方法中，冶金硅熔化并随后引入处理室，其中在引入处理室中的熔融硅经由气流雾化。这样雾化的熔融硅随后落到处理室的地板上。在处理室中产生反应性气氛，其中反应气氛包含与熔融硅中的污染物反应的工艺气体，以便从熔融硅中除去容纳物。该装置包括通过导管连接到处理室的熔化单元。此外，提供了一种气体循环单元，用于使从处理室排出的气体通过气体调节单元循环，用于清洁气体，然后经由气体入口返回到处理室中，气体入口用于雾化熔融硅离开管道之间的熔融单元和处理室。

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