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1. 发明申请

WO2010147317A3 CONTENT ENCODING METHOD, CONTENT DECODING METHOD AND ELECTRONIC DEVICE USING SAME 审中-公开
标题翻译：内容编码方法，内容译码方法和使用该方法的电子设备
公开(公告)号：WO2010147317A3
公开(公告)日：2011-02-24
申请号：PCT/KR2010003498
申请日：2010-06-01
申请人： SAMSUNG ELECTRONICS CO LTD , OH SUNG-BO , OH JI-SUNG , OH JAE-HWAN
发明人： OH SUNG-BO , OH JI-SUNG , OH JAE-HWAN
IPC分类号： H04N7/167
CPC分类号： H04N7/1675 , H04L9/16 , H04N21/23439 , H04N21/2347 , H04N21/26609 , H04N21/4405 , H04N21/4408 , H04N21/44236
摘要： Provided are a content encoding method, a content decoding method and an electronic device using the same. The content encoding method of the present invention hybrid-encodes a single content by applying a plurality of encoding methods in a hybrid manner, whereby strengthening encoding means for digital content. In addition, the electronic device of the present invention updates a hacked key list stored therein with reference to the hacked key list received from an external source, whereby strengthening authentication for devices which have made requests for content.
摘要翻译：提供了内容编码方法，内容解码方法和使用其的电子设备。本发明的内容编码方法通过以混合方式应用多种编码方式对单个内容进行混合编码，从而加强数字内容的编码装置。此外，本发明的电子设备参考从外部源接收到的被黑客的密钥列表来更新存储在其中的黑客密钥列表，从而加强了对内容请求的设备的认证。

2. 发明申请

WO2009134075A9 MANUFACTURING METHOD OF INVERSE STAGGERED POLY-SI TFT WITH CENTER OFF-SET 审中-公开
公开(公告)号：WO2009134075A9
公开(公告)日：2009-11-05
申请号：PCT/KR2009/002255
申请日：2009-04-29
申请人： KYUNGHEE UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION , JANG, Jin , OH, Jae-Hwan , KANG, Dong-Han
发明人： JANG, Jin , OH, Jae-Hwan , KANG, Dong-Han
IPC分类号： H01L29/78
摘要： Disclosed herein is a method for manufacturing a poly-Si TFT with a center offset structure, including (1) preparing a buffer layer on a substrate, (2) preparing a gate electrode with a center offset structure on the buffer layer, (3) forming a gate insulating film on the gate electrode, (4) forming an active layer on the gate insulating film, (5) depositing an n+ amorphous silicon based ohmic contact layer over the active layer, (6) placing source/drain electrodes on the n+ amorphous silicon based ohmic contact layer, and (7) forming a passivation film as a protective layer on the source/drain electrodes. According to the disclosed method, an offset pattern is formed in the center of a gate constituting the TFT to form an offset region in the middle of an active layer channel, so that complicated processes for fabrication of the TFT may be simplified and leakage current may be noticeably inhibited.

3. 发明申请

WO2005022619A1 METHOD FOR FORMING SILICON THIN-FILM ON FLEXIBLE METAL SUBSTRATE 审中-公开
标题翻译：在柔性金属基材上形成硅薄膜的方法
公开(公告)号：WO2005022619A1
公开(公告)日：2005-03-10
申请号：PCT/KR2004/002213
申请日：2004-09-02
申请人： JANG, Jin , CHOI, Jong-Hyun , KIM, Seung-Soo , OH, Jae-Hwan , CHON, Jun-Hyuk
发明人： JANG, Jin , CHOI, Jong-Hyun , KIM, Seung-Soo , OH, Jae-Hwan , CHON, Jun-Hyuk
IPC分类号： H01L21/20
CPC分类号： C23C16/56 , C23C16/0272 , C23C16/24 , H01L21/02425 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/78603
摘要： Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) is formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.
摘要翻译：公开了一种在基板上形成硅薄膜的方法，更具体地说，涉及一种在柔性金属基板上形成质量好的多晶硅薄膜的方法。准备金属基板（110），使金属基板（110）的表面变平。在金属基板（110）上形成绝缘膜（120）。在绝缘膜（120）上形成非晶硅层（130）。金属层（140）形成在非晶硅层（130）上。将金属基板（110）上的样品加热并结晶。

4. 发明申请

WO2009134075A3 MANUFACTURING METHOD OF INVERSE STAGGERED POLY-SI TFT WITH CENTER OFF-SET 审中-公开
标题翻译：具有中心偏移的反相聚合多晶硅TFT的制造方法
公开(公告)号：WO2009134075A3
公开(公告)日：2010-03-04
申请号：PCT/KR2009002255
申请日：2009-04-29
申请人： KYUNGHEE UNIVERSITY IND & ACAD , JANG JIN , OH JAE-HWAN , KANG DONG-HAN
发明人： JANG JIN , OH JAE-HWAN , KANG DONG-HAN
IPC分类号： H01L29/78
CPC分类号： H01L29/66765 , H01L29/42384
摘要： Disclosed herein is a method for manufacturing a poly-Si TFT with a center offset structure, including (1) preparing a buffer layer on a substrate, (2) preparing a gate electrode with a center offset structure on the buffer layer, (3) forming a gate insulating film on the gate electrode, (4) forming an active layer on the gate insulating film, (5) depositing an n+ amorphous silicon based ohmic contact layer over the active layer, (6) placing source/drain electrodes on the n+ amorphous silicon based ohmic contact layer, and (7) forming a passivation film as a protective layer on the source/drain electrodes. According to the disclosed method, an offset pattern is formed in the center of a gate constituting the TFT to form an offset region in the middle of an active layer channel, so that complicated processes for fabrication of the TFT may be simplified and leakage current may be noticeably inhibited.
摘要翻译：本发明公开了一种制造具有中心偏移结构的多晶硅TFT的方法，包括（1）在衬底上制备缓冲层，（2）在缓冲层上制备具有中心偏移结构的栅电极，（3）在栅电极上形成栅极绝缘膜，（4）在栅极绝缘膜上形成有源层，（5）在有源层上沉积n +非晶硅基欧姆接触层，（6）将源极/漏极放置在 n +非晶硅基欧姆接触层，（7）在源极/漏极上形成钝化膜作为保护层。根据所公开的方法，在构成TFT的栅极的中心处形成偏移图案以在有源层通道的中间形成偏移区域，从而可以简化用于制造TFT的复杂工艺，并且漏电流可以明显受到抑制

5. 发明申请

WO2012021042A3 METHOD FOR CRYSTALLIZING LOW MASS IONS FOR DIAGNOSING COLORECTAL CANCER AND METHOD FOR DIAGNOSING COLORECTAL CANCER USING SAME 审中-公开
标题翻译：用于结晶低质量离子诊断大肠癌的方法和使用相同方法诊断大肠癌的方法
公开(公告)号：WO2012021042A3
公开(公告)日：2012-05-31
申请号：PCT/KR2011005974
申请日：2011-08-12
申请人： NAT CANCER CT , YOO BYONG CHUL , KIM IN HOO , KIM KYUNG HEE , LEE JUN HWA , KIM KWANG GI , CHANG HEE JIN , KIM DAE YONG , OH JAE HWAN , KIM BYUNG CHANG , PARK JI WON , KIM SUN YOUNG
发明人： YOO BYONG CHUL , KIM IN HOO , KIM KYUNG HEE , LEE JUN HWA , KIM KWANG GI , CHANG HEE JIN , KIM DAE YONG , OH JAE HWAN , KIM BYUNG CHANG , PARK JI WON , KIM SUN YOUNG
IPC分类号： G01N33/574 , G01N33/48 , G01N33/50 , G01N33/68
CPC分类号： H01J49/0036 , G01N33/57419 , G01N33/6848 , G06F19/24 , G06F19/703
摘要： The present inventions provides a method for crystallizing low mass ions for diagnosing colorectal cancer by using a MALDI-TOF mass spectrometer to biostatistically analyze low mass ions, which are extracted from a biological sample, and a method for providing information for diagnosing colorectal cancer using same. The present inventions can provide a diagnostic method, which requires low cost and a short time for analysis, can analyze large areas, and which can provide superior and credible discriminations
摘要翻译：本发明提供了一种通过使用MALDI-TOF质谱仪对从生物样品中提取的低质量离子进行生物统计学分析来结晶用于诊断结肠直肠癌的低质量离子的方法，以及提供用于诊断结肠直肠癌的信息的方法。本发明可以提供一种诊断方法，其需要低成本和短时间的分析，可以分析大面积，并且可以提供优异和可信的鉴别

6. 发明申请

WO2010030068A1 METHOD FOR PHASE TRANSITION OF AMORPHOUS MATERIAL 审中-公开
标题翻译：非晶材料相转移方法
公开(公告)号：WO2010030068A1
公开(公告)日：2010-03-18
申请号：PCT/KR2009/002625
申请日：2009-05-19
申请人： KYUNGHEE UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION , JANG, Jin , OH, Jae-Hwan , KANG, Dong-Han , CHEON, Jun-Hyuk
发明人： JANG, Jin , OH, Jae-Hwan , KANG, Dong-Han , CHEON, Jun-Hyuk
IPC分类号： H01L21/8247
CPC分类号： H01L21/02672 , H01L21/02532 , H01L27/1277
摘要： Disclosed herein is a method of crystallizing an amorphous material for use in fabrication of thin film transistors. The method includes forming an amorphous silicon layer on a substrate, depositing a Ni metal layer on part of the amorphous silicon layer, and heat-treating the amorphous silicon layer to cause phase transition of the amorphous silicon, wherein the Ni metal layer is deposited to an average thickness of 0.79Å or less. The method can crystallize an amorphous material for use in thin film transistors using the metal induced lateral crystallization while restricting thickness and density of Ni, thereby minimizing current leakage in the thin film transistor.
摘要翻译：本文公开了一种使用于制造薄膜晶体管的非晶材料的结晶方法。该方法包括在衬底上形成非晶硅层，在非晶硅层的一部分上沉积Ni金属层，并对非晶硅层进行热处理以引起非晶硅的相变，其中Ni金属层被沉积到平均厚度为0.79Å以下。该方法可以使用金属诱导横向结晶在薄膜晶体管中使用非晶材料，同时限制Ni的厚度和密度，从而最小化薄膜晶体管中的电流泄漏。

7. 发明申请

WO2009134075A2 MANUFACTURING METHOD OF INVERSE STAGGERED POLY-SI TFT WITH CENTER OFF-SET 审中-公开
标题翻译：具有中心偏移的反相聚合多晶硅TFT的制造方法
公开(公告)号：WO2009134075A2
公开(公告)日：2009-11-05
申请号：PCT/KR2009002255
申请日：2009-04-29
申请人： KYUNGHEE UNIVERSITY IND & ACAD , JANG JIN , OH JAE-HWAN , KANG DONG-HAN
发明人： JANG JIN , OH JAE-HWAN , KANG DONG-HAN
IPC分类号： H01L29/78
CPC分类号： H01L29/66765 , H01L29/42384
摘要： Disclosed herein is a method for manufacturing a poly-Si TFT with a center offset structure, including (1) preparing a buffer layer on a substrate, (2) preparing a gate electrode with a center offset structure on the buffer layer, (3) forming a gate insulating film on the gate electrode, (4) forming an active layer on the gate insulating film, (5) depositing an n+ amorphous silicon based ohmic contact layer over the active layer, (6) placing source/drain electrodes on the n+ amorphous silicon based ohmic contact layer, and (7) forming a passivation film as a protective layer on the source/drain electrodes. According to the disclosed method, an offset pattern is formed in the center of a gate constituting the TFT to form an offset region in the middle of an active layer channel, so that complicated processes for fabrication of the TFT may be simplified and leakage current may be noticeably inhibited.
摘要翻译：本发明公开了一种制造具有中心偏移结构的多晶硅TFT的方法，包括（1）在衬底上制备缓冲层，（2）在缓冲层上制备具有中心偏移结构的栅电极，（3）在栅电极上形成栅极绝缘膜，（4）在栅极绝缘膜上形成有源层，（5）在有源层上沉积n +非晶硅基欧姆接触层，（6）将源极/漏极放置在 n +非晶硅基欧姆接触层，（7）在源极/漏极上形成钝化膜作为保护层。根据所公开的方法，在构成TFT的栅极的中心处形成偏移图案以在有源层通道的中间形成偏移区域，从而可以简化用于制造TFT的复杂工艺，并且漏电流可以明显受到抑制

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