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1. 发明申请

WO2010100764A1 COMPOSITE GRAPHITE PARTICLES AND LITHIUM SECONDARY BATTERY USING THE SAME 审中-公开
标题翻译：使用该复合石墨颗粒和锂二次电池
公开(公告)号：WO2010100764A1
公开(公告)日：2010-09-10
申请号：PCT/JP2009/054356
申请日：2009-03-02
申请人： SHOWA DENKO K.K. , LS MTRON Ltd. , SOTOWA, Chiaki , SUDOH, Akinori , TAKEUCHI, Masataka , HAN, Kyung-hee , HAN-Jung-min , OH, Jung-hun
发明人： SOTOWA, Chiaki , SUDOH, Akinori , TAKEUCHI, Masataka , HAN, Kyung-hee , HAN-Jung-min , OH, Jung-hun
IPC分类号： C01B31/04
CPC分类号： H01M4/587 , C01B32/20 , H01M4/133 , H01M4/1393 , H01M10/052
摘要： The present invention provides composite graphite particles, which are useful for a negative electrode in a secondary battery having high capacitance, good charge- discharge characteristics and good charge-discharge cycle characteristics; and a paste for negative electrode, a negative electrode and a lithium secondary battery which use the composite graphite particles. The composite graphite particles of the present invention comprises a core material consisting of graphite having a interlayer distance d(002) of 0.337 nm or less in which the intensity ratio I D /I G (R value) between the peak intensity (I D ) in a range of 1300 to 1400 cm -1 and the peak intensity ( I G ) in a range of 1580 to 1620 cm -1 as measured by Raman spectroscopy spectra is from 0.01 to 0.1 and a carbonaceous surface layer in which the intensity ratio I D /I G (R value) between the peak intensity (I D ) in a range of 1300 to 1400 cm -1 and the peak intensity ( I G ) in a range of 1580 to 1620 cm -1 as measured by Raman scattering spectroscopy is 0.2 or higher; wherein the peak intensity ratio I 110 /I 004 between the peak intensity (I 004 ) of face (110) and the peak intensity (I 004 ) of face (004) obtained by XRD measurement on the graphite crystal is 0.2 or higher when the particles are mixed with a binder and pressure-molded to a density of 1.55 to 1.65 g/cm 3 .
摘要翻译：本发明提供了复合石墨粒子，其可用于具有高电容，良好的充放电特性和良好的充放电循环特性的二次电池中的负极; 以及使用该复合石墨粒子的负极，负极和锂二次电池用糊料。本发明的复合石墨粒子包括由石墨构成的芯材，其中层间距离d（002）为0.337nm以下，其中峰强度（ID）在一定范围内的强度比ID / IG（R值）为1300〜1400cm -1，通过拉曼光谱测定的1580〜1620cm -1范围内的峰强度（IG）为0.01〜0.1，强度比ID / IG（R 通过拉曼散射光谱法测定的在1300〜1400cm -1范围内的峰强度（ID）与1580〜1620cm -1范围内的峰强度（IG）之差为0.2以上; 其中，当将所述颗粒与所述石墨晶体的XRD测量得到的在所述石墨晶体上通过XRD测量获得的面（110）的峰强度（I004）和所述面（004）的峰强度（I004）之间的峰强度比I110 / I004为0.2以上时，粘合剂，并以1.55-1.65g / cm3的密度进行压塑。

2. 发明申请

WO2011065778A2 METHOD FOR CONFIGURING CONVERTER OF WAVEGUIDE 审中-公开
标题翻译：配置波导转换器的方法
公开(公告)号：WO2011065778A2
公开(公告)日：2011-06-03
申请号：PCT/KR2010008446
申请日：2010-11-26
申请人： UNIV DONGGUK IND ACAD COOP , KIM SAM-DONG , MOON SUNG-WOON , RHEE JIN-KOO , LEE JAE-SEO , OH JUNG-HUN
发明人： KIM SAM-DONG , MOON SUNG-WOON , RHEE JIN-KOO , LEE JAE-SEO , OH JUNG-HUN
IPC分类号： G02B6/14 , H01P11/00
CPC分类号： H01P3/121 , H01P5/107
摘要： The present invention relates to a method for configuring a converter of a waveguide, and more particularly to a method for configuring a converter which can be configured by a monolithic process. The method for configuring the converter in the present invention solves a technical problem by directly forming the converter on a substrate on which an integrated circuit (flat circuit) for processing an electromagnetic wave signal transmitted and received through a waveguide is provided. The present invention does not additionally require a sensitive process related to performance thereof like a flip-chip bonding process and a ribbon bonding process for connecting the substrate for the converter with the integrated circuit since the substrate for the converter is not additionally required. In addition, the present invention can reduce a discontinuous effect with respect to the air within the waveguide and can maximize a matching characteristic with respect to the air.
摘要翻译：用于配置波导的转换器的方法技术领域本发明涉及用于配置波导的转换器的方法，并且更具体地涉及用于配置可以通过单片过程配置的转换器的方法。本发明中的转换器的构成方法通过在设置有用于处理通过波导发送和接收的电磁波信号的集成电路（扁平电路）的基板上直接形成转换器来解决技术问题。由于不另外需要用于转换器的衬底，所以本发明不需要像倒装芯片接合工艺和用于将转换器的衬底与集成电路连接的带式焊接工艺那样的与其性能有关的敏感工艺。另外，本发明可以减小对于波导内的空气的不连续效应，并且可以使与空气的匹配特性最大化。

3. 发明申请

WO2011043613A3 METHOD FOR MANUFACTURING AN MIM CAPACITOR HAVING A NANOSTRUCTURE 审中-公开
标题翻译：制造具有纳米结构的MIM电容器的方法
公开(公告)号：WO2011043613A3
公开(公告)日：2011-07-14
申请号：PCT/KR2010006875
申请日：2010-10-07
申请人： UNIV DONGGUK IND ACAD COOP , KIM SAM DONG , LEE JAE SEO , SUL WOO SUK , OH JUNG HUN
发明人： KIM SAM DONG , LEE JAE SEO , SUL WOO SUK , OH JUNG HUN
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L23/5223 , B82Y10/00 , H01L28/90 , H01L2924/0002 , H01L2924/00
摘要： Disclosed are an MIM capacitor and a method for manufacturing same, wherein dielectrics are deposited into a gapfill of 2 nm or smaller even in the case of growing a nanostructure of nanotubes or CNTs, which has no linearity, such that the MIM capacitor has a high capacitance value due to the excellent nanoporosity of CNTs.
摘要翻译：公开了一种MIM电容器及其制造方法，其中即使在不增加线性的纳米管或CNT的纳米结构的情况下，电介质也被沉积到2nm以下的间隙填充物中，使得MIM电容器具有高的由于CNT的优异的纳米孔隙度导致的电容值。

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