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    • 2. 发明申请
    • THIN FILM DIODE PANEL AND MANUFACTURING METHOD OF THE SAME
    • 薄膜二极管及其制造方法
    • WO2005040905A1
    • 2005-05-06
    • PCT/KR2004/002742
    • 2004-10-28
    • SAMSUNG ELECTRONICS CO., LTD.SHIN, Kyoung-JuCHAI, Chong-ChulOH, Joon-HakKIM, Jin-HongHONG, Sung-Jin
    • SHIN, Kyoung-JuCHAI, Chong-ChulOH, Joon-HakKIM, Jin-HongHONG, Sung-Jin
    • G02F1/1365
    • G02F1/1365G02F1/13624G02F1/136286G02F2001/13629
    • A thin film diode array panel comprising: an insulating substrate (110); first and second redundant gate lines (141, 142) made of an opaque conductor and formed on the insulating substrate; first and second floating electrodes (143, 144) made of an opaque conductor, formed on the insulating substrate, and disposed between the first and second redundant gate lines (141, 142); an insulating layer (151, 152) formed on the first and second floating electrodes (143, 144); a first gate line (121) formed on the first redundant gate line (141) and including a first input electrode (123) overlapping the first floating electrode (143) where the insulating layer (151) is interposed between the first input electrode and the first floating electrode; a second gate line (122) formed on the second redundant gate line (142) and including a second input electrode (124) overlapping the second floating electrode (144) where the insulating layer (152) is interposed between the second input electrode (124) and the second floating electrode (144); and a pixel electrode (190) including a first contact electrode (191) overlapping the first floating electrode (143) where the insulating layer (151) is interposed between the first contact electrode (191) and the first floating electrode (143), a second contact electrode (192) overlapping the second floating electrode (144) where the insulating layer (152) is interposed between the second contact electrode (192) and the second floating electrode (144), and a main body is provided.
    • 一种薄膜二极管阵列面板,包括:绝缘衬底(110); 第一和第二冗余栅极线(141,142),由不透明导体制成并形成在绝缘基板上; 第一和第二浮置电极(143,144),由不透明导体制成,形成在所述绝缘基板上,并设置在所述第一和第二冗余栅极线(141,142)之间; 形成在第一和第二浮置电极(143,144)上的绝缘层(151,152); 第一栅极线(121),形成在所述第一冗余栅极线(141)上并且包括与所述第一浮置电极(143)重叠的第一输入电极(123),其中所述绝缘层(151)插入在所述第一输入电极和 第一浮动电极; 形成在第二冗余栅极线(142)上并包括与第二浮置电极(144)重叠的第二输入电极(124)的第二栅极线(122),其中绝缘层(152)介于第二输入电极(124)之间 )和第二浮置电极(144); 和包括与所述第一浮动电极(143)重叠的第一接触电极(191)的像素电极(190),其中所述绝缘层(151)插入在所述第一接触电极(191)和所述第一浮动电极(143)之间, 与第二接触电极(192)和第二浮动电极(144)之间插入绝缘层(152)的第二浮动电极(144)重叠的第二接触电极(192)和主体。
    • 4. 发明申请
    • THIN FILM DIODE PANEL FOR TRANS-REFLECTECTIVE LIQUID CRYSTAL DISPLAY
    • 用于透射反射液晶显示器的薄膜二极管面板
    • WO2005040906A1
    • 2005-05-06
    • PCT/KR2004/002749
    • 2004-10-29
    • SAMSUNG ELECTRONICS CO., LTD.CHAI, Chong-ChulSHIN, Kyoung-JuOH, Joon-HakHONG, Sung-JinKIM, Jin-Hong
    • CHAI, Chong-ChulSHIN, Kyoung-JuOH, Joon-HakHONG, Sung-JinKIM, Jin-Hong
    • G02F1/1365
    • G02F1/133555G02F1/13624G02F1/1365
    • A thin film diode panel has a insulating substrate, a first and second gate lines (121, 122) formed on the insulating substrate, a reflection electrode (190a) and a transmission electrode (190b) formed on the insulating substrate, A first MIM diode (D1) is formed on the insulating substrate and connected to the first gate line (121) and the reflection electrode (190a). A second MIM diode (D2) is formed on the insulating substrate and connected to the second gate line (122) and the reflection electrode (190a). A third MIM diode (D1) is formed on the insulating substrate and connecting the first gate line (121) and the transmission electrode (190b). A fourth MIM diode (D21) is formed on the insulating substrate and connecting the second gate line (122) and the transmission electrode (190b). At least one of the first to fourth MIM diodes has a substantially different current-voltage (I-V) characteristic from the others.
    • 薄膜二极管面板具有绝缘基板,形成在绝缘基板上的第一和第二栅极线(121,122),形成在绝缘基板上的反射电极(190a)和透射电极(190b),第一MIM二极管 (D1)形成在绝缘基板上并连接到第一栅极线(121)和反射电极(190a)。 第二MIM二极管(D2)形成在绝缘基板上并连接到第二栅极线(122)和反射电极(190a)。 第三MIM二极管(D1)形成在绝缘基板上并连接第一栅极线(121)和发送电极(190b)。 第四MIM二极管(D21)形成在绝缘基板上并连接第二栅极线(122)和透射电极(190b)。 第一至第四MIM二极管中的至少一个具有与其它MIM电流电压(I-V)基本上不同的电流 - 电压(I-V)特性。