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1. 发明申请

WO2005082038A3 CURRENT SOURCE CONTROL IN RFID MEMORY 审中-公开
标题翻译： RFID存储器中的电流源控制
公开(公告)号：WO2005082038A3
公开(公告)日：2006-08-24
申请号：PCT/US2005006036
申请日：2005-02-24
申请人： ID SOLUTIONS INC , ROESNER BRUCE B , NANAWA PETER A
发明人： ROESNER BRUCE B , NANAWA PETER A
IPC分类号： G11C16/04 , G11C16/06 , G06K19/07 , G11C16/10
CPC分类号： G11C16/102
摘要： The present disclosure includes systems and techniques relating to RFID tags including current source control in RFID memory. According to an aspect, a radio frequency identification tag includes an antenna, a radio frequency interface coupled with the antenna, and a non-volatile memory including multiple memory cells, at least one of the memory cells including a floating gate, a control gate, and a dielectric there between. The non-volatile memory includes a controlled current source operable to modify the at least one memory cell. Additionally, the non-volatile memory can include a voltage supply line regulator that limits voltage supply based on a sensed operational current that results from the controlled current source in the non-volatile memory.
摘要翻译：本公开包括与RFID标签相关的系统和技术，包括RFID存储器中的电流源控制。根据一个方面，射频识别标签包括天线，与天线耦合的射频接口和包括多个存储单元的非易失性存储器，至少一个存储单元包括浮动栅极，控制栅极，和其间的电介质。非易失性存储器包括可操作以修改至少一个存储器单元的受控电流源。此外，非易失性存储器可以包括电压供应线调节器，其基于由非易失性存储器中的受控电流源产生的感测到的工作电流来限制电压供应。

2. 发明申请

WO2005082038A2 CURRENT SOURCE CONTROL IN RFID MEMORY 审中-公开
标题翻译： RFID存储器中的电流源控制
公开(公告)号：WO2005082038A2
公开(公告)日：2005-09-09
申请号：PCT/US2005/006036
申请日：2005-02-24
申请人： BELLA ID SOLUTIONS, INC. , ROESNER, Bruce, B. , NANAWA, Peter, A.
发明人： ROESNER, Bruce, B. , NANAWA, Peter, A.
IPC分类号： G11C16/06 , G06K19/07 , G11C16/04 , G11C16/10
CPC分类号： G11C16/102
摘要： The present disclosure includes systems and techniques relating to RFID tags including current source control in RFID memory. According to an aspect, a radio frequency identification tag includes an antenna, a radio frequency interface coupled with the antenna, and a non-volatile memory including multiple memory cells, at least one of the memory cells including a floating gate, a control gate, and a dielectric there between. The non-volatile memory includes a controlled current source operable to modify the at least one memory cell. Additionally, the non-volatile memory can include a voltage supply line regulator that limits voltage supply based on a sensed operational current that results from the controlled current source in the non-volatile memory.
摘要翻译：本公开包括与RFID标签相关的系统和技术，包括RFID存储器中的电流源控制。根据一个方面，射频识别标签包括天线，与天线耦合的射频接口和包括多个存储单元的非易失性存储器，至少一个存储单元包括浮动栅极，控制栅极，和其间的电介质。非易失性存储器包括可操作以修改至少一个存储器单元的受控电流源。此外，非易失性存储器可以包括电压供应线调节器，其基于由非易失性存储器中的受控电流源产生的感测到的工作电流来限制电压供应。

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