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1. 发明申请

WO2012091715A1 IONIZATION WINDOW 审中-公开
标题翻译：离子窗口
公开(公告)号：WO2012091715A1
公开(公告)日：2012-07-05
申请号：PCT/US2010/062495
申请日：2010-12-30
申请人： UTC FIRE & SECURITY CORPORATION , DARDONA, Sameh , OBEE, Timothy, N. , PIECH, Marcin , MANTESE, Joseph, V.
发明人： DARDONA, Sameh , OBEE, Timothy, N. , PIECH, Marcin , MANTESE, Joseph, V.
IPC分类号： G01N27/62 , H01J27/02 , B01J19/08
CPC分类号： G01T7/00 , G01N27/64 , G01T1/185 , H01J5/18 , H01J33/04 , H01J2235/18
摘要： An exemplary ionization window assembly includes a support layer having a thickness between a first side and a second side. There is at least one opening in the support layer extending between the first and second sides. The opening has a first width dimension near the first side of the support layer and a second, larger width dimension near the second side of the support layer. A window layer is supported on the second side of the support layer. The window layer extends across the opening to allow ionizing radiation to pass through the opening in a direction from the first side toward the second side.
摘要翻译：示例性电离窗组件包括在第一侧和第二侧之间具有厚度的支撑层。支撑层中至少有一个开口在第一和第二侧面之间延伸。开口具有在支撑层的第一侧附近的第一宽度尺寸和在支撑层的第二侧附近的第二较大宽度尺寸。窗口层支撑在支撑层的第二侧上。窗口层延伸穿过开口以允许电离辐射在从第一侧朝向第二侧的方向上穿过开口。

2. 发明申请

WO2012048238A1 FE- BASED ALLOYS WITH IMPROVED CONDUCTIVE PROPERTIES, METHODS OF MANUFACTURE, USES THEREOF 审中-公开
标题翻译：具有改进导电性能的FE基合金，制造方法，其用途
公开(公告)号：WO2012048238A1
公开(公告)日：2012-04-12
申请号：PCT/US2011/055393
申请日：2011-10-07
申请人： AINDOW, Mark , ALPAY, Pamir, S. , MANTESE, Joseph, V. , UNIVERSITY OF CONNECTICUT
发明人： AINDOW, Mark , ALPAY, Pamir, S. , MANTESE, Joseph, V.
IPC分类号： C22C38/04 , C22C38/12
CPC分类号： C22C38/00 , C22C38/04 , C22C38/12 , Y10T428/12951 , Y10T428/31678
摘要： A composition comprises a binary alloy of iron and one of manganese, molybdenum, or vanadium, wherein the manganese, molybdenum, or vanadium is present in the binary alloy in an amount effective to form a conductive oxide on the binary alloy, the oxidation state of the manganese, the molybdenum, and the vanadium is greater than the oxidation state of iron in the conductive oxide, and the conductive oxide has a contact resistance of less than 5 104 milli-ohms measured in accordance with ASTM B667-97 (2009).
摘要翻译：一种组合物包含铁和锰，钼或钒之一的二元合金，其中锰，钼或钒以二价合金中有效形成导电氧化物的量存在于二元合金中，氧化态锰，钼和钒大于导电氧化物中铁的氧化态，并且导电氧化物具有按照ASTM B667-97（2009）测量的小于5×10 4个欧姆的接触电阻。

3. 发明申请

WO2010080279A3 BULK-PROCESSED, ENHANCED FIGURE-OF-MERIT THERMOELECTRIC MATERIALS 审中-公开
标题翻译：大容量加工的增强型电容式热电材料
公开(公告)号：WO2010080279A3
公开(公告)日：2010-09-30
申请号：PCT/US2009066959
申请日：2009-12-07
申请人： CARRIER CORP , WILLIGAN RHONDA R , OPALKA SUSANNE M , MANTESE JOSEPH V , CULP SLADE R , COVINGTON JEFFERI J
发明人： WILLIGAN RHONDA R , OPALKA SUSANNE M , MANTESE JOSEPH V , CULP SLADE R , COVINGTON JEFFERI J
IPC分类号： H01L35/28
CPC分类号： H01L35/26 , C04B35/457 , C04B35/653 , C04B2235/40 , C04B2235/42 , C04B2235/444 , C04B2235/446 , C04B2235/6565 , C04B2235/662 , C04B2235/785 , C04B2235/80 , C04B2235/9607 , C04B2235/9661 , H01L35/16
摘要： The invention is a bulk-processed thermoelectric material and a method for fabrication. The material measures at least 30 microns in each dimension and has a figure of merit (ZT) greater than 1.0 at any temperature less than 200°C. The material comprises at least two constituents; a host phase and a dispersed second phase. The host phase is a semiconductor or semimetal and the dispersed phase of the bulk-processed material is comprised of a plurality of inclusions. The material has a substantially coherent interface between the host phase and the dispersed phase in at least one crystallographic direction.
摘要翻译：本发明是一种体积加工的热电材料及其制造方法。该材料在每个尺寸上测量至少30微米，并且在任何低于200℃的温度下都具有大于1.0的品质因数（ZT）。该材料包括至少两种成分; 宿主阶段和分散的第二阶段。主体相是半导体或半金属，并且体积加工材料的分散相由多个夹杂物组成。该材料在至少一个结晶方向上在主体相和分散相之间具有基本一致的界面。

4. 发明申请

WO2012099564A1 DETECTOR HAVING A SINGLE SOURCE FOR IONIZATION AND PHOTO DETECTION 审中-公开
标题翻译：具有单一来源的检测器用于离子和照相检测
公开(公告)号：WO2012099564A1
公开(公告)日：2012-07-26
申请号：PCT/US2011/000110
申请日：2011-01-22
申请人： UTC FIRE & SECURITY CORPORATION , PIECH, Marcin , DARDONNA, Sameh , MANTESE, Joseph, V. , GORSKI, Michael, T.
发明人： PIECH, Marcin , DARDONNA, Sameh , MANTESE, Joseph, V. , GORSKI, Michael, T.
IPC分类号： G01N27/64 , G01N21/53 , G01V8/10
CPC分类号： G01N27/64 , G01N21/53 , G01N27/66 , G08B17/10 , G08B17/113
摘要： An exemplary detector includes a source of radiation. A detection chamber is configured to at least temporarily contain a fluid. At least some of the radiation ionizes at least some of the fluid. At least some of the radiation produces light in the detection chamber. An ionization sensor provides an output corresponding to an amount of fluid ionization in the detection chamber. A light sensor provides an output corresponding to an amount of the light detected by the light sensor.
摘要翻译：示例性的检测器包括辐射源。检测室被配置成至少暂时容纳流体。至少一些辐射电离了至少一些流体。至少一些辐射在检测室中产生光。电离传感器提供对应于检测室中的流体电离量的输出。光传感器提供对应于由光传感器检测的光量的输出。

5. 发明申请

WO2008109091A1 LOW-FIRE FERROELECTRIC MATERIAL 审中-公开
标题翻译：低火电磁材料
公开(公告)号：WO2008109091A1
公开(公告)日：2008-09-12
申请号：PCT/US2008/002892
申请日：2008-03-05
申请人： DELPHI TECHNOLOGIES, INC. , MICHELI, Adolph, L. , MANTESE, Joseph, V. , SCHUBRING, Norman, W.
发明人： MICHELI, Adolph, L. , MANTESE, Joseph, V. , SCHUBRING, Norman, W.
IPC分类号： C04B35/468 , C04B35/47
CPC分类号： C04B35/468 , C04B35/47
摘要： A low-fire ferroelectric composition, includes a lead bismuth titanate compound having a formula represented by: (Bi 2 O 2 ) x 2 + (M m-i Ti m O 3 m+i ) x 2- wherein m represents a number 1 through 5, M represents a combination of bismuth and lead, and x represents a number of cations and anions present in the compound, and a eutectic mixture of lead oxide and bismuth oxide.
摘要翻译：一种低火铁电组合物，包括具有以下结构式的钛酸铋铅化合物：（Bi 2 O 2 O 2）x

6. 发明申请

WO2013043191A1 HIGH ZT THERMOELECTRIC WITH REVERSIBLE JUNCTION 审中-公开
标题翻译：具有可逆连接的高ZT热电偶
公开(公告)号：WO2013043191A1
公开(公告)日：2013-03-28
申请号：PCT/US2011/053014
申请日：2011-09-23
申请人： UNITED TECHNOLOGIES CORPORATION , MANTESE, Joseph V.
发明人： MANTESE, Joseph V.
IPC分类号： H01L35/02
CPC分类号： H01L35/32 , H01L35/04 , H01L35/34
摘要： A composite structure with tailored anisotropic energy flow is described. The structure consists of an array of two-dimensional electrodes with anisotropic geometrical shapes on a semiconductor or semimetal layer that in turn is on a metal baselayer. An applied voltage between the two-dimensional electrode array and the baselayer renders the regions under the electrodes insulating such that the anisotropic regions interact with energy flow in the semiconductor or semimetal layer. Depending on the orientation of the anisotropic insulating regions with respect to the principal direction of energy flow, the energy flow in the semiconductor or semimetal layer is greater in a principal direction and is lower in an opposite direction.
摘要翻译：描述了具有定制的各向异性能量流的复合结构。该结构由在半导体或半金属层上的具有各向异性几何形状的二维电极的阵列组成，其又在金属基底层上。二维电极阵列和基底层之间的施加电压使得电极下方的区域绝缘，使得各向异性区域与半导体层或半金属层中的能量流动相互作用。取决于各向异性绝缘区域相对于主流方向的取向，半导体或半金属层中的能量流在主要方向上较大，并且在相反方向上较低。

7. 发明申请

WO2010080279A2 BULK-PROCESSED, ENHANCED FIGURE-OF-MERIT THERMOELECTRIC MATERIALS 审中-公开
标题翻译：散装加工的增强型优质热电材料
公开(公告)号：WO2010080279A2
公开(公告)日：2010-07-15
申请号：PCT/US2009/066959
申请日：2009-12-07
申请人： CARRIER CORPORATION , WILLIGAN, Rhonda R. , OPALKA, Susanne M. , MANTESE, Joseph V. , CULP, Slade R. , COVINGTON, Jefferi J.
发明人： WILLIGAN, Rhonda R. , OPALKA, Susanne M. , MANTESE, Joseph V. , CULP, Slade R. , COVINGTON, Jefferi J.
IPC分类号： H01L35/28
CPC分类号： H01L35/26 , C04B35/457 , C04B35/653 , C04B2235/40 , C04B2235/42 , C04B2235/444 , C04B2235/446 , C04B2235/6565 , C04B2235/662 , C04B2235/785 , C04B2235/80 , C04B2235/9607 , C04B2235/9661 , H01L35/16
摘要： The invention is a bulk-processed thermoelectric material and a method for fabrication. The material measures at least 30 microns in each dimension and has a figure of merit (ZT) greater than 1.0 at any temperature less than 200°C. The material comprises at least two constituents; a host phase and a dispersed second phase. The host phase is a semiconductor or semimetal and the dispersed phase of the bulk-processed material is comprised of a plurality of inclusions. The material has a substantially coherent interface between the host phase and the dispersed phase in at least one crystallographic direction.
摘要翻译：本发明是一种批量处理的热电材料和一种制造方法。该材料在每个尺寸上至少测量30微米，并且在低于200℃的任何温度下具有大于1.0的品质因数（ZT）。该材料包含至少两种组分; 主体相和分散的第二相。主体相是半导体或半金属，并且批量处理材料的分散相由多个夹杂物组成。该材料在主相和分散相之间在至少一个结晶方向上具有基本上连贯的界面。

8. 发明申请

WO2006088856A1 SYSTEM AND METHOD FOR CONTROLLING PYROELECTRIC SENSORS IN A FOCAL PLANE ARRAY 审中-公开
标题翻译：用于控制聚焦平面阵列中的光电传感器的系统和方法
公开(公告)号：WO2006088856A1
公开(公告)日：2006-08-24
申请号：PCT/US2006/005150
申请日：2006-02-14
申请人： DELPHI TECHNOLOGIES, INC. , MANTESE, Joseph, V. , PAWLAK, Andrzej, M.
发明人： MANTESE, Joseph, V. , PAWLAK, Andrzej, M.
IPC分类号： G01J5/10 , G01J5/24 , G01J5/22 , G01J5/34
CPC分类号： G01J5/34
摘要： A system and a method for controlling pyroelectric sensors in a focal plane array are provided. The method includes applying a first oscillatory voltage waveform to first and second pyroelectric sensors in the focal plane array such that the first and second pyroelectric sensors receive a first predetermined number of cycles of the first oscillatory voltage waveform over a first time period. The first pyroelectric sensor receives infrared radiation thereon. The method further includes generating a first output signal using the first and second pyroelectric sensors during the first time period indicative of a temperature of the first pyroelectric sensor. The method further includes applying a second oscillatory voltage waveform to third and fourth pyroelectric sensors in the focal plane array such that the third and fourth pyroelectric sensors receive a second predetermined number of cycles of the first oscillatory voltage waveform over the first time period. The third pyroelectric sensor receives infrared radiation thereon. The method further includes generating a second output signal using the third and fourth pyroelectric sensors during the first time period indicative of a temperature of the third pyroelectric sensor.
摘要翻译：提供了一种用于控制焦平面阵列中的热电传感器的系统和方法。该方法包括将第一振荡电压波形施加到焦平面阵列中的第一和第二热电传感器，使得第一和第二热电传感器在第一时间段内接收第一振荡电压波形的第一预定数量的周期。第一热电传感器在其上接收红外辐射。该方法还包括在第一时间段期间使用第一和第二热电传感器产生表示第一热电传感器的温度的第一输出信号。该方法还包括将第二振荡电压波形应用于焦平面阵列中的第三和第四热电传感器，使得第三和第四热电传感器在第一时间段内接收第一预定数量的第一振荡电压波形的周期。第三热电传感器在其上接收红外辐射。该方法还包括在表示第三热电传感器的温度的第一时间段期间使用第三和第四热电传感器产生第二输出信号。

9. 发明申请

WO2004076991A2 PYROELECTRIC SENSOR 审中-公开
标题翻译：光电传感器
公开(公告)号：WO2004076991A2
公开(公告)日：2004-09-10
申请号：PCT/US2004/005100
申请日：2004-02-20
申请人： DELPHI TECHNOLOGIES, INC. , SYMETRIX CORPORATION , MANTESE, Joseph, V. , SCHUBRING, Norman, W. , MICHELI, Adolph, L. , PAZ DE ARAUJO, Carlos, A. , MCMILLAN, Larry, D. , CELINSKA, Jolanta
发明人： MANTESE, Joseph, V. , SCHUBRING, Norman, W. , MICHELI, Adolph, L. , PAZ DE ARAUJO, Carlos, A. , MCMILLAN, Larry, D. , CELINSKA, Jolanta
IPC分类号： G01J
CPC分类号： G01J5/34
摘要： A ferroelectric/pyroelectric sensor employs a technique for determining a charge output of a ferroelectric scene element of the sensor by measuring the hysteresis loop output of the scene element several times during a particular time frame for the same temperature. An external AC signal is applied to the ferroelectric scene element to cause the hysteresis loop output from the element to switch polarization. Charge integration circuitry, such as a combination output capacitor and operational amplifier, is employed to measure the charge from the scene element. Preferably, the ferroelectric of the scene element is made of an economical and responsive strontium bismuth tantalate, SBT, or derivative thereof, disposed directly between top and bottom electrodes. Because of the frequency characteristics of the sensor, created by the external AC signal, the element need not be thermally isolated from the silicon substrate by a traditional air bridge, which is difficult to manufacture, and instead is preferably thermally isolated by spin-on-glass, SOG. To prevent saturation of an output signal voltage of the sensor by excessive charge accumulation in an output capacitor, the sensor preferably has a reference element configured electrically in parallel with the scene element. When the voltage of the AC signal is negative the output capacitor is discharged by flowing current through the reference element thus interrogating the polarization of the reference element which is compared to and subtracted from the polarization of the scene element for each cycle. The polarization difference measured for each cycle over a set time period are summed by an integrating amplifier to produce a signal output voltage.
摘要翻译：铁电/热电传感器采用用于通过在相同温度的特定时间段内多次测量场景元件的磁滞回线输出来确定传感器的铁电场景元件的电荷输出的技术。外部交流信号被施加到铁电场景元件以使得从元件输出的磁滞回线转换偏振。采用诸如组合输出电容器和运算放大器的电荷积分电路来测量场景元件中的电荷。优选地，场景元件的铁电体由直接设置在顶部和底部电极之间的经济且响应的钽酸铋铋钡，或其衍生物制成。由于由外部AC信号产生的传感器的频率特性，该元件不需要通过难以制造的传统空气桥与硅衬底热隔离，而是优选地通过旋转隔离热隔离，玻璃，SOG。为了通过输出电容器中的过度电荷积累来防止传感器的输出信号电压的饱和，传感器优选地具有与场景元件电并联配置的参考元件。当AC信号的电压为负时，输出电容器通过流过参考元件的电流而被放电，从而询问参考元件的偏振，该参考元件的偏振与每个周期的场景元素的偏振相比较和减去。在设定的时间周期内对每个周期测量的偏振差由积分放大器相加以产生信号输出电压。

10. 发明申请

WO2013101716A1 TWO-WAFER MEMS IONIZATION DEVICE 审中-公开
标题翻译：双波长MEMS离子化装置
公开(公告)号：WO2013101716A1
公开(公告)日：2013-07-04
申请号：PCT/US2012/071176
申请日：2012-12-21
申请人： UTC FIRE & SECURITY CORPORATION , MANTESE, Joseph V. , VINCITORE, Antonio M.
发明人： MANTESE, Joseph V. , VINCITORE, Antonio M.
IPC分类号： H01J33/02 , H01J1/304 , H01J9/02 , G08B17/11
CPC分类号： H01J33/02 , G08B17/11 , H01J1/3044 , H01J9/025 , H01J2201/30415 , H01J2201/3048
摘要： A micro-electromechanical system (MEMS) assembly includes at least one emission source; a top wafer having a plurality of side walls and a generally horizontal portion, the horizontal portion having a thickness between a first side and a directly opposed second side, at least one window in the horizontal portion extending between the first and second sides and a transmission membrane across the at least one window; and a bottom wafer having a first portion with a first substantially planar surface, an intermediate surface directly opposed to the first substantially planar surface, a second portion with a second substantially planar surface, the at least one emission source provided on the second substantially planar surface; where the top wafer bonds to the bottom wafer at the intermediate surface and encloses a cavity within the top wafer and the bottom wafer.
摘要翻译：微机电系统（MEMS）组件包括至少一个发射源; 具有多个侧壁和大致水平部分的顶部晶片，所述水平部分具有在第一侧和直接相对的第二侧之间的厚度，所述水平部分中的至少一个窗口在所述第一侧和第二侧之间延伸，膜穿过至少一个窗口; 以及底部晶片，其具有第一部分和第二基本上平坦的表面，与所述第一基本上平坦的表面直接相对的中间表面，具有第二基本平坦表面的第二部分，所述至少一个发射源设置在所述第二基本上平坦的表面上 ; 其中顶部晶片在中间表面处接合到底部晶片并且在顶部晶片和底部晶片内包围空腔。

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