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1. 发明申请

WO2010086718A1 OHMIC ELECTRODE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译： OHMIC电极及其形成方法
公开(公告)号：WO2010086718A1
公开(公告)日：2010-08-05
申请号：PCT/IB2010/000161
申请日：2010-01-29
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA , SEKI, Akinori , SUGIMOTO, Masahiro , KAWAHASHI, Akira , TAKAHASHI, Yasuo , MAEDA, Masakatsu
发明人： SEKI, Akinori , SUGIMOTO, Masahiro , KAWAHASHI, Akira , TAKAHASHI, Yasuo , MAEDA, Masakatsu
IPC分类号： H01L29/45 , H01L21/04
CPC分类号： H01L29/45 , H01L21/0485 , H01L29/1608
摘要： The invention provides an ohmic electrode of a p-type SiC semiconductor element, which includes an ohmic electrode layer that is made of Ti 3 SiC 2 , and that is formed directly on a surface of a p-type SiC semiconductor. The invention also provides a method of forming an ohmic electrode of a p-type SiC semiconductor element. The ohmic electrode includes an ohmic electrode layer that is made of Ti 3 SiC 2 , and that is formed directly on a surface of a p-type SiC semiconductor. The method includes forming a ternary mixed film that includes Ti, Si, and C in a manner such that an atomic composition ratio, Ti : Si : C is 3 : 1 : 2, on a surface of a p-type SiC semiconductor to produce a laminated film; and annealing the produced laminated film under vacuum or under an inert gas atmosphere.
摘要翻译：本发明提供了一种p型SiC半导体元件的欧姆电极，其包括由Ti 3 SiC 2制成的欧姆电极层，其直接形成在p型SiC半导体的表面上。本发明还提供了形成p型SiC半导体元件的欧姆电极的方法。欧姆电极包括由Ti 3 SiC 2制成并且直接形成在p型SiC半导体的表面上的欧姆电极层。该方法包括以使得在p型SiC半导体的表面上的原子组成比Ti:Si:C为3:1:2的方式形成包括Ti，Si和C的三元混合膜，以产生层压膜; 并在真空或惰性气体气氛下退火生产的层压膜。

2. 发明申请

WO2008035822A1 SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2008035822A1
公开(公告)日：2008-03-27
申请号：PCT/JP2007/069135
申请日：2007-09-21
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA , OSAKA UNIVERSITY , KAWAHASHI, Akira , SUGIMOTO, Masahiro , SEKI, Akinori , MAEDA, Masakatsu , TAKAHASHI, Yasuo
发明人： KAWAHASHI, Akira , SUGIMOTO, Masahiro , SEKI, Akinori , MAEDA, Masakatsu , TAKAHASHI, Yasuo
IPC分类号： H01L21/28 , H01L29/45 , H01L29/78 , H01L29/24
CPC分类号： H01L29/7802 , H01L21/046 , H01L29/1608 , H01L29/45 , H01L29/78 , Y10S438/931
摘要： A method is set forth of forming an ohmic electrode having good characteristics on a SiC semiconductor layer. In the method, a Ti-layer and an Al-layer are formed on a surface of the SiC substrate. The SiC substrate having the Ti-layer and the Al-layer is maintained at a temperature that is higher than or equal to a first temperature and lower than a second temperature until all Ti in the Ti-layer has reacted with Al. The first temperature is the minimum temperature of a temperature zone at which the Ti reacts with the Al to form Al 3 Ti, and the second temperature is the minimum temperature of a temperature zone at which the Al 3 Ti reacts with SiC to form Ti 3 SiC 2 . As a result of this maintaining of temperature step, an Al 3 Ti-layer is formed on the surface of the SiC substrate. The method also comprises further heating the SiC substrate having the Al 3 Ti-layer to a temperature that is higher than the second temperature. As a result of this step of further heating the SiC substrate reacts with Al 3 Ti of the Al 3 Ti-layer to form a Ti 3 SiC 2 -layer on the surface of the SiC substrate.
摘要翻译：阐述了在SiC半导体层上形成具有良好特性的欧姆电极的方法。在该方法中，在SiC衬底的表面上形成Ti层和Al层。具有Ti层和Al层的SiC衬底保持在高于或等于第一温度并低于第二温度的温度，直到Ti层中的所有Ti都与Al反应。第一个温度是Ti与Al反应形成Al 3 Ti的温度区域的最低温度，第二个温度是Al 3 Ti与SiC反应形成Ti 3 SiC 2。作为这种温度步骤的保持的结果，在SiC衬底的表面上形成Al 3 Ti层。该方法还包括将具有Al 3 Ti层的SiC衬底进一步加热到高于第二温度的温度。作为进一步加热步骤的结果，SiC衬底与Al 3 Ti层的Al 3 Ti反应形成Ti 3 N 3， SiC衬底的表面上的SiC 2层。

3. 发明申请

WO2011015942A2 OHMIC ELECTRODE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译： OHMIC电极及其形成方法
公开(公告)号：WO2011015942A2
公开(公告)日：2011-02-10
申请号：PCT/IB2010001941
申请日：2010-08-04
申请人： TOYOTA MOTOR CO LTD , SEKI AKINORI , SUGIMOTO MASAHIRO , KAWAHASHI AKIRA , TAKAHASHI YASUO , MAEDA MASAKATSU
发明人： SEKI AKINORI , SUGIMOTO MASAHIRO , KAWAHASHI AKIRA , TAKAHASHI YASUO , MAEDA MASAKATSU
IPC分类号： H01L21/04
CPC分类号： H01L21/0485 , H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/7395 , H01L29/78 , H01L29/7802
摘要： There are provided an ohmic electrode for a p-type SiC semiconductor, and a method of forming the ohmic electrode. The ohmic electrode has an ohmic electrode layer, which has an amorphous structure and which is made of a Ti(1-x-y)Si(x)C(y) ternary film of which a composition ratio is within a composition range that is surrounded by two lines and two curves expressed by an expression x = 0 (0.35 = y = 0.5), an expression y = -1.120X+0.5200 (0.1667 = x = 0.375), an expression y = 1.778(x-0.375)2+0.1 (0 = x = 0.375) and an expression y = -2.504x2-0.5828x+0.5 (0 = x = 0.1667) and that excludes the line expressed by the expression x = 0. The ohmic layer is directly laminated on a surface of a p-type SiC semiconductor.
摘要翻译：提供了用于p型SiC半导体的欧姆电极和形成欧姆电极的方法。欧姆电极具有欧姆电极层，其具有非晶结构，并且由Ti（1-xy）Si（x）C（y）三元膜制成，其组成比在由由表达式x = 0（0.35 = y = 0.5）表达的两条线和两条曲线，表达式y = -1.120X + 0.5200（0.1667 = x = 0.375），表达式y = 1.778（x-0.375）2 + 0.1 （0 = x = 0.375），并且表达式y = -2.504x2-0.5828x + 0.5（0 = x = 0.1667），并且排除由表达式x = 0表示的线。欧姆层直接层压在 p型SiC半导体。

4. 发明申请

WO2011015942A3 OHMIC ELECTRODE AND METHOD OF FORMING THE SAME 审中-公开
公开(公告)号：WO2011015942A3
公开(公告)日：2011-02-10
申请号：PCT/IB2010/001941
申请日：2010-08-04
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA , SEKI, Akinori , SUGIMOTO, Masahiro , KAWAHASHI, Akira , TAKAHASHI, Yasuo , MAEDA, Masakatsu
发明人： SEKI, Akinori , SUGIMOTO, Masahiro , KAWAHASHI, Akira , TAKAHASHI, Yasuo , MAEDA, Masakatsu
IPC分类号： H01L21/04 , H01L29/45 , H01L29/78
摘要： There are provided an ohmic electrode for a p-type SiC semiconductor, and a method of forming the ohmic electrode. The ohmic electrode has an ohmic electrode layer, which has an amorphous structure and which is made of a Ti (1-x-y) Si (x) C (y) ternary film of which a composition ratio is within a composition range that is surrounded by two lines and two curves expressed by an expression x = 0 (0.35 ≤ y ≤ 0.5), an expression y = -1.120X+0.5200 (0.1667 ≤ x ≤ 0.375), an expression y = 1.778(x-0.375) 2 +0.1 (0 ≤ x ≤ 0.375) and an expression y = -2.504x 2 -0.5828x+0.5 (0 ≤ x ≤ 0.1667) and that excludes the line expressed by the expression x = 0. The ohmic layer is directly laminated on a surface of a p-type SiC semiconductor.

5. 发明申请

WO2007080996A1 TRANSMISSION CIRCUIT BY POLAR MODULATION SYSTEM AND COMMUNICATION APPARATUS USING THE SAME 审中-公开
标题翻译：通过极性调制系统传输电路和使用相同的通信设备
公开(公告)号：WO2007080996A1
公开(公告)日：2007-07-19
申请号：PCT/JP2007/050374
申请日：2007-01-09
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. , MAEDA, Masakatsu
发明人： MAEDA, Masakatsu
IPC分类号： H04B7/005
CPC分类号： H04W52/52 , H03G1/0088 , H03G3/004 , H03G3/3042
摘要： A transmission circuit for alleviating the frequency characteristics of the group delay and the attenuation amount in a transmission signal band and expanding the dynamic range to a high frequency band is provided. A ladder-type resistance-type attenuator includes switching elements (12-19), 2R resistor elements (20-28) and R resistor elements (29-35). The 2R and R resistor elements (20-28) and (29-35) are respectively connected to variable capacitor elements (CS1-CS8, CP1-CP8) in parallel. The variable attenuator having such a connection structure is connected to an amplitude modulation loop of the transmission circuit. By controlling the capacitance value of the variable capacitor elements (CS1-CS8, CP1-CP8) using the capacitance value control section (36) when the switching elements are ON/OFF switched based on the transmission power control signal, the influence of parasitic capacitances of the variable capacitor elements (CS1-CS8, CP1-CP8) is suppressed and the group delay between the amplitude modulation and the phase modulation is reduced.
摘要翻译：提供一种用于缓解组延迟的频率特性和发送信号频带中的衰减量并将动态范围扩展到高频带的发送电路。梯型电阻型衰减器包括开关元件（12-19），2R电阻元件（20-28）和R电阻元件（29-35）。 2R和R电阻元件（20-28）和（29-35）分别并联连接到可变电容器元件（CS1-CS8，CP1-CP8）。具有这种连接结构的可变衰减器连接到传输电路的幅度调制环路。通过使用电容值控制部（36），在开关元件基于发送功率控制信号进行ON / OFF切换时，通过控制可变电容元件（CS1〜CS8，CP1-CP8）的电容值，寄生电容的影响的可变电容器元件（CS1-CS8，CP1-CP8）被抑制，并且幅度调制和相位调制之间的组延迟减小。

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