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    • 1. 发明申请
    • FIELD EFFECT TRANSISTOR FOR CHEMICAL SENSING USING GRAPHENE, CHEMICAL SENSOR USING THE TRANSISTOR AND METHOD FOR PRODUCING THE TRANSISTOR
    • 使用石墨化学传感器的场效应晶体管,使用晶体管的化学传感器和用于制造晶体管的方法
    • WO2012150884A1
    • 2012-11-08
    • PCT/SE2011/050565
    • 2011-05-05
    • SENSIC ABANDERSSON, MikeHULTMAN, LarsLLOYD SPETZ, AnitaPEARCE, RuthYAKIMOVA, Rositza
    • ANDERSSON, MikeHULTMAN, LarsLLOYD SPETZ, AnitaPEARCE, RuthYAKIMOVA, Rositza
    • G01N27/414
    • G01N27/4146G01N27/4141H01L29/0673
    • A field effect transistor (20) for chemical sensing, comprising an electrically conducting and chemically sensitive channel (2) extending between drain (5) and source (6) electrodes. A gate electrode (7) is separated from the channel (2) by a gap (10) through which a chemical to be sensed can reach the channel (2) which comprises a continuous monocrystalline graphene layer (2a) arranged on an electrically insulating graphene layer substrate (1 ). The graphene layer (2a) extends between and is electrically connected to the source electrode (5) and the drain electrode (6). The substrate supports the graphene layer, allowing it to stay 2-dimensional and continuous, and enables it to be provided on a well defined surface, and be produced and added to the transistor as a separate part. This is beneficial for reproducibility and reduces the risk of damage to the graphene layer during production and after. Low detection limits with low variability between individual transistors are also enabled. There is also provided a chemical sensor (30) using the transistor (20) and a method for providing the transistor (20).
    • 一种用于化学感测的场效应晶体管(20),包括在漏极(5)和源极(6)之间延伸的导电和化学敏感的通道(2)。 栅电极(7)通过间隙(10)与通道(2)分开,待检测的化学物质可通过该间隙(10)到达通道(2),通道(2)包括布置在电绝缘石墨烯上的连续单晶石墨烯层(2a) 层基板(1)。 石墨烯层(2a)在源电极(5)和漏电极(6)之间延伸并电连接。 衬底支撑石墨烯层,使其保持2维和连续,并使其能够在良好限定的表面上提供,并作为单独部分产生并添加到晶体管。 这有利于重现性,并降低在生产和之后石墨烯层损坏的风险。 单个晶体管之间的低可变性的低检测限也可实现。 还提供了使用晶体管(20)的化学传感器(30)和用于提供晶体管(20)的方法。
    • 5. 发明申请
    • METHOD AND DEVICE FOR GAS SENSING
    • 用于气体感测的方法和装置
    • WO1996009534A1
    • 1996-03-28
    • PCT/SE1995001084
    • 1995-09-22
    • FORSKARPATENT I LINKÖPING ABBARANZAHI, AmirLUNDSTRÖM, IngemarLLOYD SPETZ, Anita
    • FORSKARPATENT I LINKÖPING AB
    • G01N27/12
    • G01N33/005G01N27/4141
    • The present invention is a gas sensitive semiconductor device suitable for forming arrays having one or more elements containing at least two layers disposed on a semiconductor substrate, the layers offering better long term stability and faster response compared to elements with only one layer. The layer in contact with the gas to be detected is catalytically active while the other layers do not have to be catalytic but provide changes in the electric field outside the semiconductor in the presence of the gas to be detected. The sensing portion may be operated up to about 1000 DEG C and is therefore of interest for gas sensitive devices based on e.g. silicon carbide or diamond capable of operation at higher temperatures than that for silicon based devices.
    • 本发明是一种适用于形成具有一个或多个元件的阵列的气体敏感半导体器件,所述阵列具有设置在半导体衬底上的至少两层,与仅具有一层的元件相比,这些层具有更好的长期稳定性和更快的响应。 与要检测的气体接触的层是催化活性的,而其它层不必是催化剂,而是在存在待检测气体的情况下提供半导体外部电场的变化。 感测部分可以操作高达约1000℃,因此基于例如气体敏感装置感兴趣。 能够在高于硅基器件的温度下操作的碳化硅或金刚石。