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    • 1. 发明申请
    • IN-SITU METALIZATION MONITORING USING EDDY CURRENT MEASUREMENTS AND OPTICAL MEASUREMENTS
    • 使用EDDY电流测量和光学测量的现场金属化监测
    • WO0146684A9
    • 2002-05-23
    • PCT/US0035358
    • 2000-12-22
    • KLA TENCOR CORPLEHMAN KURT RLEE SHING MJOHNSON WALTFIELDEN JOHNZHAO GUOHENGNIKOONAHAD MEHRDAD
    • LEHMAN KURT RLEE SHING MJOHNSON WALTFIELDEN JOHNZHAO GUOHENGNIKOONAHAD MEHRDAD
    • G01B7/06B24B37/013B24B49/10G01B7/00G01B11/06G01N27/72
    • B24B37/013B24B49/105G01N27/72
    • Disclosed is a method of obtaining information in-situ regarding a film of a sample using an eddy probe during a process for removing the film. The eddy probe has at least one sensing coil. An AC voltage is applied to the sensing coil(s) of the eddy probe. One or more first signals are measured in the sensing coil(s) of the eddy probe when the sensing coil(s) are positioned proximate the film of the sample. One or more second signals are measured in the sensing coil(s) of the eddy probe when the sensing coil(s) are positioned proximate to a reference material having a fixed composition and/or distance from the sensing coil. The first signals are calibrated based on the second signals so that undesired gain and/or phase changes within the first signals are corrected. A property value of the film is determined based on the calibrated first signals. An apparatus for performing the above described method is also disclosed. Additionally, a chemical mechanical polishing (CMP) system for polishing a sample with a polishing agent and monitoring the sample is disclosed. The CMP system includes a polishing table, a sample carrier arranged to hold the sample over the polishing table, and an eddy probe.
    • 公开了一种在除去膜的过程中使用涡流探针在原位获取样品的膜的方法。 涡流探头具有至少一个感测线圈。 交流电压被施加到涡流探头的感测线圈上。 当感测线圈靠近样品的膜定位时,在涡流探针的感测线圈中测量一个或多个第一信号。 当感测线圈靠近具有与感测线圈的固定成分和/或距离的参考材料定位时,在涡流探针的感测线圈中测量一个或多个第二信号。 第一信号基于第二信号进行校准,从而校正第一信号内的不期望的增益和/或相位变化。 基于校准的第一信号确定胶片的属性值。 还公开了一种用于执行上述方法的装置。 此外,公开了一种用抛光剂抛光样品并监测样品的化学机械抛光(CMP)系统。 CMP系统包括抛光台,布置成将样品保持在抛光台上的样品载体和涡流探针。