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    • 3. 发明申请
    • METHOD AND DEVICE FOR TREATMENT
    • 用于治疗的方法和装置
    • WO1996035232A1
    • 1996-11-07
    • PCT/JP1996001136
    • 1996-04-25
    • TOKYO ELECTRON LIMITEDKUMASAKA, IwaoKUBO, KojiSUZUKI, MakotoTSUNODA, Yuji
    • TOKYO ELECTRON LIMITED
    • H01L21/68
    • H01L21/67276H01L21/67242H01L21/67778Y10S414/137Y10S414/139
    • An exclusively used carrier (EQMC) containing wafers (EQMW) for monitoring heat-treatment equipment is housed on a carrier storing shelf (32). An equipment monitoring parameter setting section (62) sets the frequency at which wafers (EQMW) are transferred into a heat-treating furnace (21), the number of wafers on a wafer boat (23) and the positions where the wafers are placed on the wafer boat (23). For every period determined by the set frequency, the wafers (EQMW) are placed in dummy wafer holding areas (D) at both the upper and lower end sections of the board (23) and subjected to heat-treatment. After the heat-treatment the wafers (EQMW) are transferred to an inspecting device. The state of the heat-treatment equipment is recognized from the treated states of the wafers (EQMW). In such a way, during the treatment of semiconductor wafers with a batch type heat-treatment equipment, the state of the heat-treatment equipment is monitored using the monitoring wafers and, the operation of the heat-treatment equipment is facilitated.
    • 包含用于监测热处理设备的晶片(EQMW)的专用载体(EQMC)被容纳在载体存放架(32)上。 设备监视参数设置部分(62)将晶片(EQMW)被传送到热处理炉(21)中的频率,晶片舟(23)上的晶片数量以及放置晶片的位置 晶片舟(23)。 对于由设定频率确定的每个周期,将晶片(EQMW)放置在板(23)的上端部和下端部的虚设晶片保持区域(D)中并进行热处理。 在热处理之后,将晶片(EQMW)转移到检查装置。 从处理的晶片状态(EQMW)可以看出热处理设备的状态。 以这种方式,在使用间歇式热处理设备处理半导体晶片期间,使用监视晶片来监视热处理设备的状态,并且便于热处理设备的操作。
    • 8. 发明申请
    • WHITE LAMINATED POLYESTER FILM FOR LAMINATION
    • 白色层压聚酯薄膜
    • WO1998017471A1
    • 1998-04-30
    • PCT/JP1997003694
    • 1997-10-14
    • TEIJIN LIMITEDHASEGAWA, TetsuyaMUROOKA, HirofumiKUBO, KojiYOSHIDA, Tetsuo
    • TEIJIN LIMITED
    • B32B27/36
    • B32B27/36B32B15/09B32B27/08B32B27/20B32B2367/00B32B2439/66Y10T428/24355Y10T428/2495Y10T428/25Y10T428/259Y10T428/31681Y10T428/31786
    • A white laminated polyester film for metal lamination, comprising a layer (layer A) comprising a copolyester A and a layer (layer B) comprising a copolyester B, characterized in that (I) (i) the copolyester A is one containing 0 to 15 % by weight of rutile titanium oxide with an average particule diameter of 0.1 to 0.5 mu m and having a melting point of 210 to 245 DEG C, and (ii) the copolyester B is one containing 10 to 50 % by weight of rutile titanium oxide with an average particle diameter of 0.1 to 0.5 mu m and having a melting point of 210 to 245 DEG C and an intrinsic viscosity in the polymer portion of 0.46 to 0.66; (II) the following relationship holds between the intrinsic viscosity ( mu A) of the polymer portion in the copolyester A and the intrinsic viscosity ( mu B) of the polymer portion in the copolyester B: I mu A - mu BI , rho o: theoretical density of the whole laminated film, g/cm , rho i: density of polymer portion in each copolyester, g/cm , rho 1: density of rutile titanium oxide, g/cm , Xi: thickness of each layer, mu m, Wi: concentration of rutile titanium oxide in each copolyester, wt.%, and n: number of copolyester layers. This film is excellent in whitening power, formability, aroma retention, and heat resistance and is less likely to cause roll abrasion.
    • 一种用于金属层压的白色层压聚酯膜,包括包含共聚酯A的层(层A)和包含共聚酯B的层(层B),其特征在于(I)(i)共聚酯A是含有0至15 平均颗粒直径为0.1〜0.5μm,熔点为210〜245℃的金红石型氧化钛的重量%,(ii)共聚酯B为含有10〜50重量%的金红石型氧化钛 平均粒径为0.1〜0.5μm,熔点为210〜245℃,聚合物部分的特性粘度为0.46〜0.66, (II)共聚酯A中的聚合物部分的特性粘度(μA)与共聚酯B中聚合物部分的特性粘度(μB)之间的关系如下:IμA-μBI <0.15; 和(III)整个层压膜的表观密度(rho)与理论密度(rho o)的比率满足以下关系:0.65