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    • 1. 发明申请
    • HIGH SPEED LOW POWER MAGNETIC DEVICES BASED ON CURRENT INDUCED SPIN-MOMENTUM TRANSFER
    • 基于电流感应电动势传输的高速低功率磁性装置
    • WO2011005484A3
    • 2011-03-03
    • PCT/US2010039373
    • 2010-06-21
    • UNIV NEW YORKKENT ANDREWSTEIN DANIELBEAUJOUR JEAN-MARC
    • KENT ANDREWSTEIN DANIELBEAUJOUR JEAN-MARC
    • H01L27/115H01L21/8247H01L27/10
    • G11C11/16G11C11/161G11C11/1673G11C11/1675G11C11/5607
    • A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity and/or magnetization direction. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer. The fixed and freee magnetic layers may have magnetization directions of a substantially non-zero angle relative to the layer normal. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to read out the information stored in the device.
    • 一种用于使用自旋极化电流来控制和切换用于存储器单元的磁性装置中的磁区的磁化方向和/或螺旋度的高速和低功率方法。 磁性装置包括具有固定磁性螺旋度和/或磁化方向的参考磁性层和具有可变磁性和/或磁化方向的自由磁性层。 固定磁性层和自由磁性层优选由非磁性层分离。 固定和自由磁性层可以具有相对于层法线基本上非零角度的磁化方向。 可以将电流施加到装置以引起改变装置的磁状态的扭矩,使得其可以用作写入信息的磁存储器。 测量取决于装置的磁状态的电阻来读出存储在装置中的信息。
    • 4. 发明申请
    • HIGH SPEED LOW POWER MAGNETIC DEVICES BASED CURRENT INDUCED SPIN-MOMENTUM TRANSFER
    • 基于高速低功率磁电装置的电流感应旋转传递
    • WO2005020251A2
    • 2005-03-03
    • PCT/US2004/026894
    • 2004-08-18
    • NEW YORK UNIVERSITYKENT, AndrewGONZALEZ GARCIA, EnriqueOZYILMAZ, Barbaros
    • KENT, AndrewGONZALEZ GARCIA, EnriqueOZYILMAZ, Barbaros
    • H01F
    • H01F10/325B82Y10/00B82Y25/00G11C11/161G11C11/1673G11C11/1675G11C11/5607H01F10/123H01F10/3286H01L29/82H01L43/08
    • The present invention generally relates to the field of magnetic for memory cells that can serve as non-volatile memory. More specially, the present invention describes a high speed and low power method by which a spin polarized electrical current can be used to control and switch the magnetization direction of a magnetic region in such a device. The magnetic device comprises a pinned magnetic layer with a fixed magnetization direction, a free magnetic layer with a free magnetization direction, and a read-out magnetic layer with a fixed magnetization direction. The pinned magnetic layer and the free magnetic layer are separated by a non-magnetic layer, and the free magnetic layer and the read-out magnetic layer are separated by another non-magnetic layer. The magnetization directions of the pinned and free layers generally do not point along the same axis. The non-magnetic layers minimize the magnetic interaction between the magnetic layers. A current is applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.
    • 本发明一般涉及可用作非易失性存储器的用于存储器单元的磁场领域。 更具体地,本发明描述了可以使用自旋极化电流来控制和切换这种装置中的磁性区域的磁化方向的高速和低功率方法。 磁性装置包括具有固定磁化方向的固定磁性层,具有自由磁化方向的自由磁性层和具有固定磁化方向的读出磁性层。 固定磁性层和自由磁性层由非磁性层分离,自由磁性层和读出磁性层被另一个非磁性层分离。 被钉扎和自由层的磁化方向通常不沿着相同的轴线。 非磁性层使磁性层之间的磁性相互作用最小化。 电流被施加到装置以引起改变装置的磁状态的扭矩,使得它可以用作写入信息的磁存储器。 测量取决于装置的磁状态的电阻,从而读出存储在装置中的信息。
    • 5. 发明申请
    • PRECESSIONAL MAGNETIZATION REVERSAL IN A MAGNETIC TUNNEL JUNCTION WITH A PERPENDICULAR POLARIZER
    • 一个具有极性极化的磁性隧道连接的反向磁化反应
    • WO2014153064A1
    • 2014-09-25
    • PCT/US2014/028917
    • 2014-03-14
    • NEW YORK UNIVERSITYKENT, AndrewLIU, Huanlong
    • KENT, AndrewLIU, Huanlong
    • G11C11/16
    • G11C11/161G11C11/165G11C11/1675H01L43/08
    • A magnetic device that includes a perpendicular magnetized polarizing layer configured to provide a first spin-torque and an in-plane magnetized free layer having a magnetization vector having at least a first stable state and a second stable state. The magnetic device also includes a reference layer configured to provide a second spin-torque. The first spin-torque and the second spin-torque can combine. The in-plane magnetized free layer and the reference layer form a magnetic tunnel junction and the combined first spin-torque and second spin-torque influences the magnetic state of the in-plane magnetized free layer. An application of a voltage pulse, having either positive or negative polarity and a selected amplitude and duration, through the magnetic device causes the magnetization vector to oscillate between the first stable state and the second stable state for a portion of the duration regardless of an initial state of the magnetization vector.
    • 一种磁性装置,其包括被配置为提供具有至少第一稳定状态和第二稳定状态的磁化矢量的第一自旋扭矩和面内磁化自由层的垂直磁化偏振层。 磁性装置还包括被配置为提供第二自旋扭矩的参考层。 第一自旋扭矩和第二自旋扭矩可以组合。 面内磁化自由层和参考层形成磁性隧道结,组合的第一自旋转矩和第二自旋转矩影响面内磁化自由层的磁状态。 通过磁性装置施加具有正极性或负极性以及所选择的幅度和持续时间的电压脉冲使得磁化矢量在持续时间的一部分期间在第一稳定状态和第二稳定状态之间振荡,而不管初始 磁化矢量的状态。