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    • 4. 发明申请
    • CONTROL OF TEMPERATURE AND OPERATION OF INERT ELECTRODES DURING PRODUCTION OF ALUMINIUM METAL
    • 控制铝金属生产期间电极的温度和操作
    • WO2004018737A1
    • 2004-03-04
    • PCT/NO2003/000280
    • 2003-08-15
    • NORSK HYDRO ASASILJAN, Ole-JacobJULSRUD, Stein
    • SILJAN, Ole-JacobJULSRUD, Stein
    • C25C3/08
    • C25C3/08C25C3/06
    • The present invention relates to methods for operating and controlling the temperature of inert electrodes during production of molten aluminium by electrolysis of an aluminous ore, preferably alumina, dissolved in molten salts, preferably a fluoride based electrolyte, in an electrolysis cell with vertical or essentially vertical electrode configuration. The invention describes methods of designing and operating inert electrodes in a vertical and/or inclined position for production of aluminium metal, where said electrodes have an operating temperature that may deviate from the electrolyte temperature, thereby controlling the dissolution of electrode materials and preventing solid deposit formation on the electrodes. The present invention is also applicable to aluminium production cells utilising inert electrodes in a horisontal configuration, and traditional Hall-Heroult cells retrofitted with inert anodes.
    • 本发明涉及通过在垂直或基本垂直的电解池中电解溶解在熔融盐(优选氟化物基电解质)中的铝矿,优选氧化铝,来操作和控制生产熔融铝期间惰性电极的温度的方法 电极配置。 本发明描述了在用于生产铝金属的垂直和/或倾斜位置中设计和操作惰性电极的方法,其中所述电极具有可能偏离电解质温度的操作温度,从而控制电极材料的溶解并防止固体沉积 在电极上形成。 本发明也适用于利用水平配置中的惰性电极的铝生产电池,以及用惰性阳极改装的传统霍尔 - 豪氏电池。
    • 7. 发明申请
    • METHOD AND CRUCIBLE FOR DIRECT SOLIDIFICATION OF SEMICONDUCTOR GRADE MULTI-CRYSTALLINE SILICON INGOTS
    • 半导体级结晶硅晶体直接固化的方法与研究
    • WO2007148987A1
    • 2007-12-27
    • PCT/NO2007/000226
    • 2007-06-22
    • REC SCANWAFER ASJULSRUD, SteinNAAS, Tyke, Laurence
    • JULSRUD, SteinNAAS, Tyke, Laurence
    • C30B29/06C30B11/00
    • C30B11/002C30B29/06
    • This invention relates to a method for direct solidification of semiconductor grade multi-crystalline silicon ingots allowing improved control with the solidification process and reduced levels of oxygen and carbon impurities in the ingot, by crystallizing the semiconductor grade silicon ingot, optionally also including the melting of the feed silicon material, in a crucible made of silicon nitride, or in a crucible made of a composite of silicon carbide and silicon nitride, and where the wall thickness of the bottom of the crucible is dimensioned such that the thermal resistance across the bottom is reduced to a level of at least the same order as thermal resistance across the support below carrying the crucible or lower. The invention also relates to crucibles which are made of silicon nitride, or of a composite of silicon carbide and silicon nitride, and where the wall thickness of the bottom of the crucible is dimensioned such that the thermal resistance across the bottom is reduced to a level of at least the same order as thermal resistance across the support below carrying the crucible or lower.
    • 本发明涉及一种用于半导体级多晶硅锭的直接固化的方法,其允许通过使半导体级硅锭晶体化,从而改善对凝固过程的控制和降低锭中氧和碳杂质的含量,任选地还包括熔化 进料硅材料,在由氮化硅制成的坩埚中,或在由碳化硅和氮化硅的复合材料制成的坩埚中,并且其中坩埚底部的壁厚的尺寸设定为使得底部的热阻为 降低到与承载坩埚或下部的载体下方的耐热性至少相同的水平。 本发明还涉及由氮化硅或碳化硅和氮化硅的复合材料制成的坩埚,并且其中坩埚底部的壁厚确定尺寸使得跨底部的热阻降低到一定水平 至少与承载坩埚或下部的支撑体上的耐热性相同的次序。