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1. 发明申请

WO1997028370A1 TURBOMACHINERY DRIVING APPARATUS AND METHOD OF CONTROLLING THE SAME 审中-公开
标题翻译：涡轮驱动装置及其控制方法
公开(公告)号：WO1997028370A1
公开(公告)日：1997-08-07
申请号：PCT/JP1996000760
申请日：1996-03-22
申请人： HITACHI, LTD. , HITACHI TECHNO ENGINEERING CO., LTD. , HITACHI KEIYO ENGINEERING CO., LTD.
发明人： HITACHI, LTD. , HITACHI TECHNO ENGINEERING CO., LTD. , HITACHI KEIYO ENGINEERING CO., LTD. , SATOU, Kouiti , OSHIGA, Takayuki , FUJII, Hiroshi , OHTA, Jun , ONOH, Hiroshi
IPC分类号： F04B49/06
CPC分类号： F04D15/0066
摘要： A turbomachinery driving apparatus using a dual inverter system and a method of controlling the same, wherein a main control unit for controlling the two inverters is omitted, and an external communication unit for transmitting signals representative of the mutual operational conditions of the inverters is made unnecessary, the exchanging of these signals being done simply, whereby the size, weight, manufacturing cost and the number of parts of the apparatus are reduced. First and second earth leakage breakers (ELB1, ELB2), inverters (INV1, INV2), pumps (4-1, 4-2) and motors (5-1, 5-2) constitute a full duplex feed water system. The inverters (INV1, INV2) are connected to each other by signal lines (S3) and adapted to exchange signals representative of their respective operational conditions and failure conditions and requirements for the operations of the partner systems. Out of the load condition detecting sensors, respective flow rate signal transmitting signal lines (S4, S5) are connected to the inverters directly, and pressure signal transmitting signal lines (S6, S7) in common.
摘要翻译：使用双逆变器系统的涡轮机械驱动装置及其控制方法，其中省略了用于控制两个逆变器的主控制单元，并且不需要用于发送代表逆变器的相互操作条件的信号的外部通信单元这些信号的交换简单地进行，从而减小了装置的尺寸，重量，制造成本和部件数量。第一和第二漏电断路器（ELB1，ELB2），逆变器（INV1，INV2），泵（4-1,4-2）和电动机（5-1,5-2）构成全双工给水系统。逆变器（INV1，INV2）通过信号线（S3）彼此连接，并且适于交换表示其各自操作条件的信号和故障条件以及对方系统的操作的要求。在负载条件检测传感器中，相应的流量信号发送信号线（S4，S5）直接连接到逆变器，压力信号发送信号线（S6，S7）共同连接。

2. 发明申请

WO1998039799A1 POST-TREATING METHOD FOR PLASMA ETCHING 审中-公开
标题翻译：等离子体蚀刻的后处理方法
公开(公告)号：WO1998039799A1
公开(公告)日：1998-09-11
申请号：PCT/JP1997000897
申请日：1997-03-19
申请人： HITACHI, LTD. , HITACHI TECHNO ENGINEERING CO., LTD. , TAKAHASHI, Kazue , FUKUYAMA, Ryoji , KANEKIYO, Tadamitsu , YOSHIDA, Tsuyoshi
发明人： HITACHI, LTD. , HITACHI TECHNO ENGINEERING CO., LTD.
IPC分类号： H01L21/3065
CPC分类号： H01L21/02071
摘要： A post-treating method for plasma etching is used for post-treating a semiconductor substrate including aluminum wiring after the substrate is etched with a plasma by using a gas containing chlorine. During the post-treatment, a gas containing hydrogen and fluorine is used as an ashing gas. The mixing ratio of the fluorine gas is less than 2 %, preferably, about 1 %. Therefore, the time for the post-treatment can be shortened and side wall removal can be improved because the ashing speed of the resist is increased and anticorrosion treatment and removability of the substrate are excellent. Therefore, the throughput of substrate treatment and the yield of the substrate are improved.
摘要翻译：使用等离子体蚀刻的后处理方法用于对包含铝布线的半导体衬底进行后处理，在使用含氯气体的等离子体蚀刻衬底之后。在后处理中，使用含有氢和氟的气体作为灰化气体。氟气的混合比小于2％，优选约1％。因此，可以缩短后处理的时间，并且可以提高抗蚀剂的灰化速度，防腐蚀处理和基板的可除去性优异的侧壁去除。因此，提高了基板处理的生产量和基板的产量。

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