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1. 发明申请

WO1986005524A1 PROCESS FOR THE MANUFACTURE OF A P-CONDUCTING EPITAXY LAYER FROM A III/V SEMI-CONDUCTOR 审中-公开
标题翻译：从III / V半导体制造P导电外延层的工艺
公开(公告)号：WO1986005524A1
公开(公告)日：1986-09-25
申请号：PCT/DE1986000116
申请日：1986-03-18
申请人： BALK, Pieter , HEINECKE, Harald , HEYEN, Meino , LÜTH, Hans , PÜTZ, Norbert , WEYERS, Markus
IPC分类号： C30B25/02
CPC分类号： C30B25/02 , C30B29/40 , H01L21/02546 , H01L21/02579 , H01L21/0262 , H01L21/02631
摘要： The layer is produced on a substrate by means of molecular rays, using a organo-metallic compound of the third main group of the periodic system. The process is characterized by the fact that dosage concentrations of between 1014 cm-3 and roughly 1020 cm-3 can be obtained. To this end, organo-metallic compounds of the general structural formula Me(CnHx) are used, with Me being a metal of the third main group, n >= 2 and x = 2n + 1. In an advantageous further development of the process covered by the invention, a metal-hydride of the fifth main group of the periodic system with the general structural formula MeHx is used, with Me being a metal of the fifth main group, and x

2. 发明申请

WO1989000212A1 QUARTZ GLASS REACTOR FOR MOCVD INSTALLATIONS 审中-公开
标题翻译：用于MOCVD安装的QUARTZ玻璃反应器
公开(公告)号：WO1989000212A1
公开(公告)日：1989-01-12
申请号：PCT/DE1988000397
申请日：1988-06-30
申请人： AIXTRON GMBH , JÜRGENSEN, Holger , HEYEN, Meino
发明人： AIXTRON GMBH
IPC分类号： C30B25/14
CPC分类号： C30B25/14 , C23C16/4583 , C30B25/08
摘要： A reactor for MOCVD installations has a reaction vessel through which the reaction gas(es) flow and in which the substrate is arranged in such a manner that a principal surface is approximately parallel to the direction of flow. The reactor is characterized by the combination of the following features: the reaction vessel (1) is made in a known way of quartz glass and has, at least in the region in which the reaction gases flow, a rectangular cross-section, a flange element (3) is provided at the gas inlet end of the reaction vessel, the reaction vessel is surrounded by a protective tube, the protective tube has a reaction gas inlet (5) on the front end, which is connected to a flange element (4), to which the flange element (3) of the reaction vessel can be flanged and, in the surface shell, a protective gas inlet (6) which permits flushing of the space between the reaction vessel and the protective tube, and a reaction gas outlet (7), the reaction gases are deflected in the reaction vessel and emerge through the surface shell of the reaction vessel, a diffusion barrier is provided at the end of the reaction vessel opposite the gas inlet end.
摘要翻译：用于MOCVD装置的反应器具有反应容器，反应气体通过该反应容器流动，并且其中基板被布置成使得主表面大致平行于流动方向。反应器的特征在于以下特征的组合：反应容器（1）以已知的石英玻璃制造，并且至少在反应气体流过的区域中具有矩形横截面，凸缘元件（3）设置在反应容器的气体入口端，反应容器被保护管包围，保护管在前端具有反应气体入口（5），该反应气体入口（5）连接到凸缘元件 4），反应容器的凸缘元件（3）可以与其对准，并且在表面壳体中具有允许冲洗反应容器和保护管之间的空间的保护气体入口（6）和反应气体出口（7），反应气体在反应容器中偏转并通过反应容器的表面壳出现，在反应容器的与气体入口端相对的末端设有扩散阻挡层。

3. 发明申请

WO1989001479A1 CYCLIC OR BICYCLIC ALUMINIUM, GALLIUM OR INDIUM ORGANIC COMPOUNDS AND THEIR USE FOR VAPOUR DEPOSITION OF METALS ON SUBSTRATES 审中-公开
标题翻译：循环或双相铝，玻璃或有机化合物及其在基材上的蒸气沉积金属的用途
公开(公告)号：WO1989001479A1
公开(公告)日：1989-02-23
申请号：PCT/EP1988000674
申请日：1988-07-26
申请人： MERCK PATENT GESELLSCHAFT MIT BESCHRÄNKTER ... , HOSTALEK, Martin , POHL, Ludwig , ERDMANN, Dietrich , SCHUMANN, Herbert , HARTMANN, Uwe , HEYEN, Meino , JÜRGENSEN, Holger
发明人： MERCK PATENT GESELLSCHAFT MIT BESCHRÄNKTER ...
IPC分类号： C07F05/00
CPC分类号： C07F5/00
摘要： The invention concerns organometallic compounds which are intramolecularly stabilized and have a cyclic or bicyclic structure and their use for manufacturing thin films and epitaxial layers by vapour deposition. The organometallic compounds have the formula (I), where M = Al, In or Ga; Y = N, P, As or Sb and the symbols R , R , M, N and o have the meaning given in claim 1.
摘要翻译：本发明涉及分子内稳定并具有环状或双环结构的有机金属化合物及其通过气相沉积制造薄膜和外延层的用途。有机金属化合物具有式（I），其中M = Al，In或Ga; Y = N，P，As或Sb，符号R 1，R 2，M，N和o具有权利要求1中给出的含义。

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