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1. 发明申请

WO2011129565A3 METHOD FOR PRODUCING TANTALUM (TA) POWDER USING EUTECTIC ALLOYS 审中-公开
标题翻译：使用保护性合金生产粉末（TA）粉末的方法
公开(公告)号：WO2011129565A3
公开(公告)日：2011-12-22
申请号：PCT/KR2011002530
申请日：2011-04-11
申请人： HEE SUNG METAL LTD , YOON WON-KYU , YANG SEUNG-HO , HONG GIL-SU , KIM HONG SIK , KANG DONG HAN
发明人： YOON WON-KYU , YANG SEUNG-HO , HONG GIL-SU , KIM HONG SIK , KANG DONG HAN
IPC分类号： B22F9/14 , B22F1/00 , C22B34/24 , C22C27/02
CPC分类号： B22F9/14 , B22F2009/001 , C22C27/02 , Y02P10/24
摘要： The present invention relates to a method for producing tantalum (Ta) powder from a waste tantalum (Ta) target using eutectic alloys. The method comprises the following steps: removing contaminants from the surface of a waste tantalum (Ta) target by means of a chemical or physical method; weighing the waste tantalum (Ta) target from which contaminants are removed and a eutectic reaction element, and feeding the waste tantalum target and the eutectic reaction element at a desirable ratio into the interior of plasma equipment; reducing the pressure inside the plasma equipment, and injecting reaction gas and applying electric power to the interior of the plasma equipment so as to form a low-power plasma and produce tantalum (Ta) eutectic alloys; applying a high-power plasma to the tantalum (Ta) eutectic alloys to produce an ultra-fine tantalum (Ta) eutectic alloy powder; heat-treating the thus-produced tantalum (Ta) eutectic alloy powder; and removing the eutectic reaction element from the heat-treated tantalum (Ta) eutectic alloy powder using a chemical method to produce high-purity ultra-fine tantalum (Ta) powder.
摘要翻译：本发明涉及使用共晶合金从废钽（Ta）靶产生钽（Ta）粉末的方法。该方法包括以下步骤：通过化学或物理方法从废钽（Ta）靶的表面去除污染物; 称量除去污染物的废钽（Ta）靶和共晶反应元件，并以期望的比例将废钽靶和共晶反应元件供给到等离子体设备的内部; 降低等离子体设备内的压力，注入反应气体并向等离子体设备内部施加电力，形成低功率等离子体并生产钽（Ta）共晶合金; 将高功率等离子体施加到钽（Ta）共晶合金以产生超细钽（Ta）共晶合金粉末; 热处理由此生产的钽（Ta）共晶合金粉末; 并使用化学方法从热处理的钽（Ta）共晶合金粉末中除去共晶反应元件以产生高纯度超细钽（Ta）粉末。

2. 发明申请

WO2011118931A3 METHOD FOR PREPARING FINE RUTHENIUM POWDER HAVING HIGHER PURITY USING WASTE RUTHENIUM TARGET 审中-公开
标题翻译：使用废钌靶材制备具有更高纯度的细钌粉末的方法
公开(公告)号：WO2011118931A3
公开(公告)日：2011-12-22
申请号：PCT/KR2011001780
申请日：2011-03-15
申请人： HEE SUNG METAL LTD , YOON WON-KYU , YANG SEUNG-HO , HONG GIL-SU
发明人： YOON WON-KYU , YANG SEUNG-HO , HONG GIL-SU
IPC分类号： C23C14/00 , B22F9/14 , C23C14/34
CPC分类号： B22F9/12 , B22F2009/001 , B22F2998/10 , B22F2999/00 , Y02P10/24 , B22F3/12 , B22F2202/13 , B22F9/04
摘要： The present invention relates to a method for preparing fine ruthenium powder having higher purity from a waste ruthenium target, wherein the object of the method is to overcome the disadvantages of using conventional wet preparation methods for preparing powder, including high costs and long preparation time due to a complicated preparation process, and environmental problems for treating waste water with acids. In order to address the problems, the present invention provides a method comprising the following steps: chemically or physically removing contaminant sources on the surface of a waste ruthenium target; mounting the surface-treated waste ruthenium target on the interior of a plasma chamber and controlling a plasma torch; reducing pressure using a vacuum device and forming a plasma; preparing a powder having higher purity; and fine-grinding the powder to obtain fine ruthenium powder having higher purity.
摘要翻译：本发明涉及一种从废钌靶制备具有较高纯度的细钌粉的方法，其中该方法的目的是克服使用常规湿法制备方法制备粉末的缺点，其包括高成本和由于制备时间长复杂的制备过程以及用酸处理废水的环境问题。为了解决这些问题，本发明提供了一种方法，其包括以下步骤：化学或物理地去除废钌靶表面上的污染源; 将表面处理过的废钌靶安装在等离子体室的内部并控制等离子炬; 使用真空装置减压并形成等离子体; 制备具有较高纯度的粉末; 并细磨该粉末以获得具有较高纯度的细钌粉末。

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