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    • 9. 发明申请
    • NONVOLATILE MEMORY ERASURE TECHNIQUES
    • 非易失性存储器擦除技术
    • WO2013147818A1
    • 2013-10-03
    • PCT/US2012/031312
    • 2012-03-29
    • INTEL CORPORATIONSANDA, HiroyukiPANGAL, KiranGUO, XinNAGANUMA, Kaoru
    • SANDA, HiroyukiPANGAL, KiranGUO, XinNAGANUMA, Kaoru
    • G11C16/34G11C16/14
    • G11C16/16G06F12/0246G11C11/5635G11C16/3445
    • Embodiments of the present disclosure describe methods, apparatus, and system configurations for conditional pre-programming of nonvolatile memory before erasure. In one instance, the method includes receiving a request to erase information in a portion of the nonvolatile memory device, in which the portion includes a plurality of storage units, determining whether one or more storage units of the plurality of storage units included in the portion of the non-volatile memory device are programmed, pre-programming the portion of the non-volatile memory device if the one or more storage units are determined to be programmed, and erasing the pre-programmed portion of the non-volatile memory device. A number of determined programmed storage units may not exceed a predetermined value. Other embodiments may be described and/or claimed.
    • 本公开的实施例描述了在擦除之前非易失性存储器的条件预编程的方法,装置和系统配置。 在一种情况下,该方法包括接收擦除非易失性存储器件的一部分中的信息的请求,其中该部分包括多个存储单元,确定包括在该部分中的多个存储单元中的一个或多个存储单元 对所述非易失性存储器件进行编程,如果所述一个或多个存储单元被确定为被编程,并且擦除所述非易失性存储器件的预编程部分,则对所述非易失性存储器件的所述部分进行预编程。 多个确定的编程存储单元可能不超过预定值。 可以描述和/或要求保护其他实施例。