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1. 发明申请

WO2009040654A1 MULTI-DIRECTIONAL TRENCHING OF A PLURALITY OF DIES IN MANUFACTURING SUPERJUNCTION DEVICES 审中-公开
标题翻译：制造超级设备中多种多样的方式的多方向性
公开(公告)号：WO2009040654A1
公开(公告)日：2009-04-02
申请号：PCT/IB2008/002528
申请日：2008-09-26
申请人： ICEMOS TECHNOLOGY LTD , ISHIGURO, Takeshi , GRIFFIN, Hugh J. , SUGIURA, Kenji
发明人： ISHIGURO, Takeshi , GRIFFIN, Hugh J. , SUGIURA, Kenji
IPC分类号： H01L29/06
CPC分类号： H01L29/0634
摘要： A method of manufacturing a "super junction device includes providing a semiconductor wafer having a plurality of dies (320a, 321a). A first plurality of trenches (323a) having a first orientation are formed in a first die (320a). A second plurality of trenches having a second orientation are formed in a second die (321a). The second orientation is different from the first orientation.
摘要翻译：一种制造“超接合器件”的方法包括提供具有多个管芯（320a，321a）的半导体晶片，在第一管芯（320a）中形成具有第一取向的第一多个沟槽（323a），第二多个具有第二取向的沟槽形成在第二模具（321a）中，第二取向与第一取向不同。

2. 发明申请

WO2009040650A1 MULTI-DIRECTIONAL TRENCHING OF A DIE IN MANUFACTURING SUPERJUNCTION DEVICES 审中-公开
标题翻译：制造超导装置中的多方向拉杆
公开(公告)号：WO2009040650A1
公开(公告)日：2009-04-02
申请号：PCT/IB2008/002520
申请日：2008-09-26
申请人： ICEMOS TECHNOLOGY LTD , ISHIGURO, Takeshi , GRIFFIN, Hugh, J. , SUGIURA, Kenji
发明人： ISHIGURO, Takeshi , GRIFFIN, Hugh, J. , SUGIURA, Kenji
IPC分类号： H01L29/06
CPC分类号： H01L29/0634
摘要： A method of manufacturing a super junction device includes providing a semiconductor wafer having at least one die (220a). At- least one first trench (222a) having a first orientation is formed in the at least one die. At least one second trench having a second orientation that is different from the first orientation is formed in the at least one die.
摘要翻译：制造超接合器件的方法包括提供具有至少一个管芯（220a）的半导体晶片。在至少一个管芯中形成至少一个具有第一取向的第一沟槽（222a）。在至少一个管芯中形成具有不同于第一取向的第二取向的至少一个第二沟槽。

3. 发明申请

WO2007103287A2 FRONT SIDE ELECTRICAL CONTACT FOR PHOTODETECTOR ARRAY AND METHOD OF MAKING SAME 审中-公开
标题翻译：用于光电转换器阵列的前侧电触头及其制造方法
公开(公告)号：WO2007103287A2
公开(公告)日：2007-09-13
申请号：PCT/US2007/005550
申请日：2007-03-02
申请人： ICEMOS TECHNOLOGY CORPORATION , WILSON, Robin , BROGAN, Conor , GRIFFIN, Hugh, J. , MACNAMARA, Cormac
发明人： WILSON, Robin , BROGAN, Conor , GRIFFIN, Hugh, J. , MACNAMARA, Cormac
IPC分类号： H01L27/14
CPC分类号： H01L27/1446 , H01L31/022408
摘要： A photodiode includes a semiconductor having front and backside surfaces and first and second active layers of opposite conductivity, separated by an intrinsic layer. A plurality of isolation trenches filled with conductive material extend into the first active layer, dividing the photodiode into a plurality of cells and forming a central trench region in electrical communication with the first active layer beneath each of the cells. Sidewall active diffusion regions extend the trench depth along each sidewall and are formed by doping at least a portion of the sidewalls with a dopant of first conductivity. A first contact electrically communicates with the first active layer beneath each of the cells via the central trench region. A plurality of second contacts each electrically communicate with the second active layer of one of the plurality of cells. The first and second contacts are formed on the front surface of the photodiode.
摘要翻译：光电二极管包括具有前内表面和背面的半导体以及由本征层隔开的具有相反导电性的第一和第二有源层。填充有导电材料的多个隔离沟槽延伸到第一有源层中，将光电二极管分成多个单元并形成与每个单元下面的第一有源层电连通的中心沟槽区。侧壁有源扩散区域沿着每个侧壁延伸沟槽深度，并且通过用第一导电性的掺杂剂掺杂至少一部分侧壁而形成。第一接触件经由中心沟槽区域与每个电池单元之下的第一有源层电连通。多个第二触点分别与多个单元之一的第二活性层电连通。第一和第二触点形成在光电二极管的前表面上。

4. 发明申请

WO2007103255A8 PHOTODIODE HAVING INCREASED PROPORTION OF LIGHT-SENSITIVE AREA TO LIGTH-INSENSITIVE AREA 审中-公开
标题翻译：光敏二极管在不敏感区光敏区的比例增加
公开(公告)号：WO2007103255A8
公开(公告)日：2008-10-30
申请号：PCT/US2007005498
申请日：2007-03-02
申请人： ICEMOS TECHNOLOGY CORP , WILSON ROBIN , BROGAN CONOR , GRIFFIN HUGH J , MACNAMARA CORMAC
发明人： WILSON ROBIN , BROGAN CONOR , GRIFFIN HUGH J , MACNAMARA CORMAC
IPC分类号： H01L31/062
CPC分类号： H01L27/1446 , H01L27/14603 , H01L27/1463 , H01L27/14683 , H01L31/105
摘要： A photodiode having an increased proportion of light-sensitive area to light-insensitive area includes a semiconductor having a backside surface and a light-sensitive frontside surface. The semiconductor includes a first active layer having a first conductivity, a second active layer having a second conductivity opposite the first conductivity, and an intrinsic layer separating the first and second active layers. A plurality of isolation trenches are arranged to divide the photodiode into a plurality of cells. Each cell has a total frontside area including a cell active frontside area sensitive to light and a cell inactive frontside area not sensitive to light. The cell active fiontside area forms at least 95 percent of the cell total fiontside area. A method of forming the photodiode is also disclosed.
摘要翻译：具有增加的光敏区域与不敏感区域的比例的光电二极管包括具有后侧表面和光敏前侧表面的半导体。半导体包括具有第一导电性的第一有源层，具有与第一导电性相反的第二导电性的第二有源层以及分隔第一有源层和第二有源层的本征层。多个隔离沟槽被布置为将光电二极管分成多个单元。每个细胞具有总前侧区域，包括对光敏感的细胞活性正面区域和对光不敏感的细胞非活性正面区域。细胞活跃的fiontside区域形成细胞总fiontside区域的至少95％。还公开了一种形成光电二极管的方法。

5. 发明申请

WO2007103287A3 FRONT SIDE ELECTRICAL CONTACT FOR PHOTODETECTOR ARRAY AND METHOD OF MAKING SAME 审中-公开
标题翻译：用于光电转换器阵列的前侧电触头及其制造方法
公开(公告)号：WO2007103287A3
公开(公告)日：2008-07-17
申请号：PCT/US2007005550
申请日：2007-03-02
申请人： ICEMOS TECHNOLOGY CORP , WILSON ROBIN , BROGAN CONOR , GRIFFIN HUGH J , MACNAMARA CORMAC
发明人： WILSON ROBIN , BROGAN CONOR , GRIFFIN HUGH J , MACNAMARA CORMAC
IPC分类号： H01L29/76
CPC分类号： H01L27/1446 , H01L31/022408
摘要： A photodiode includes a semiconductor having front and backside surfaces and first and second active layers of opposite conductivity, separated by an intrinsic layer. A plurality of isolation trenches filled with conductive material extend into the first active layer, dividing the photodiode into a plurality of cells and forming a central trench region in electrical communication with the first active layer beneath each of the cells. Sidewall active diffusion regions extend the trench depth along each sidewall and are formed by doping at least a portion of the sidewalls with a dopant of first conductivity. A first contact electrically communicates with the first active layer beneath each of the cells via the central trench region. A plurality of second contacts each electrically communicate with the second active layer of one of the plurality of cells. The first and second contacts are formed on the front surface of the photodiode.
摘要翻译：光电二极管包括具有前内表面和背面的半导体以及由本征层隔开的具有相反导电性的第一和第二有源层。填充有导电材料的多个隔离沟槽延伸到第一有源层中，将光电二极管分成多个单元并形成与每个单元下面的第一有源层电连通的中心沟槽区。侧壁有源扩散区域沿着每个侧壁延伸沟槽深度，并且通过用第一导电性的掺杂剂掺杂至少一部分侧壁而形成。第一接触件经由中心沟槽区域与每个电池单元之下的第一有源层电连通。多个第二触点分别与多个单元之一的第二活性层电连通。第一和第二触点形成在光电二极管的前表面上。

6. 发明申请

WO2007127925A3 TECHNIQUE FOR STABLE PROCESSING OF THIN/FRAGILE SUBSTRATES 审中-公开
公开(公告)号：WO2007127925A3
公开(公告)日：2007-11-08
申请号：PCT/US2007/067640
申请日：2007-04-27
申请人： ICEMOS TECHNOLOGY CORPORATION , WILSON, Robin , BROGAN, Conor , GRIFFIN, Hugh, J. , MACNAMARA, Cormac
发明人： WILSON, Robin , BROGAN, Conor , GRIFFIN, Hugh, J. , MACNAMARA, Cormac
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
摘要： A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main surface and a second main surface. The second main surface of the device layer is disposed on a surface of the dielectric layer opposite to the semiconductor substrate. A plurality of intended die areas are defined on the first main surface of the device layer. The plurality of intended die areas are separated from one another. A plurality of die access trenches are formed in the semiconductor substrate from the second main surface. Each of the plurality of die access trenches are disposed generally beneath at least a respective one of the plurality of intended die areas.

7. 发明申请

WO2007127925A2 TECHNIQUE FOR STABLE PROCESSING OF THIN/FRAGILE SUBSTRATES 审中-公开
标题翻译：薄/基底板稳定加工的技术
公开(公告)号：WO2007127925A2
公开(公告)日：2007-11-08
申请号：PCT/US2007067640
申请日：2007-04-27
申请人： ICEMOS TECHNOLOGY CORP , WILSON ROBIN , BROGAN CONOR , GRIFFIN HUGH J , MACNAMARA CORMAC
发明人： WILSON ROBIN , BROGAN CONOR , GRIFFIN HUGH J , MACNAMARA CORMAC
IPC分类号： H01L27/12 , H01L27/01 , H01L31/0392
CPC分类号： H01L21/78
摘要： A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main surface and a second main surface. The second main surface of the device layer is disposed on a surface of the dielectric layer opposite to the semiconductor substrate. A plurality of intended die areas are defined on the first main surface of the device layer. The plurality of intended die areas are separated from one another. A plurality of die access trenches are formed in the semiconductor substrate from the second main surface. Each of the plurality of die access trenches are disposed generally beneath at least a respective one of the plurality of intended die areas.
摘要翻译：绝缘体上半导体（SOI）晶片包括具有彼此相对的第一和第二主表面的半导体衬底。电介质层设置在半导体衬底的第一主表面的至少一部分上。器件层具有第一主表面和第二主表面。器件层的第二主表面设置在与半导体衬底相对的电介质层的表面上。在设备层的第一主表面上限定多个预期的管芯区域。多个预期的模具区域彼此分离。多个裸片存取沟槽从第二主表面形成在半导体衬底中。多个管芯存取沟槽中的每一个通常设置在多个预期管芯区域中的至少一个相应的一个的下方。

8. 发明申请

WO2007103255A3 PHOTODIODE HAVING INCREASED PROPORTION OF LIGHT-SENSITIVE AREA TO LIGTH-INSENSITIVE AREA 审中-公开
公开(公告)号：WO2007103255A3
公开(公告)日：2007-09-13
申请号：PCT/US2007/005498
申请日：2007-03-02
申请人： ICEMOS TECHNOLOGY CORPORATION , MACNAMARA, Cormac , WILSON, Robin , BROGAN, Conor , GRIFFIN, Hugh, J.
发明人： MACNAMARA, Cormac , WILSON, Robin , BROGAN, Conor , GRIFFIN, Hugh, J.
IPC分类号： H01L31/062
摘要： A photodiode having an increased proportion of light-sensitive area to light-insensitive area includes a semiconductor having a backside surface and a light-sensitive frontside surface. The semiconductor includes a first active layer having a first conductivity, a second active layer having a second conductivity opposite the first conductivity, and an intrinsic layer separating the first and second active layers. A plurality of isolation trenches are arranged to divide the photodiode into a plurality of cells. Each cell has a total frontside area including a cell active frontside area sensitive to light and a cell inactive frontside area not sensitive to light. The cell active fiontside area forms at least 95 percent of the cell total fiontside area. A method of forming the photodiode is also disclosed.

9. 发明申请

WO2007103255A2 PHOTODIODE HAVING INCREASED PROPORTION OF LIGHT-SENSITIVE AREA TO LIGTH-INSENSITIVE AREA 审中-公开
标题翻译：具有增加光敏感区域的光致变色区域的光致变色区域
公开(公告)号：WO2007103255A2
公开(公告)日：2007-09-13
申请号：PCT/US2007005498
申请日：2007-03-02
申请人： ICEMOS TECHNOLOGY CORP , MACNAMARA CORMAC , WILSON ROBIN , BROGAN CONOR , GRIFFIN HUGH J
发明人： MACNAMARA CORMAC , WILSON ROBIN , BROGAN CONOR , GRIFFIN HUGH J
IPC分类号： H01L27/14
CPC分类号： H01L27/1446 , H01L27/14603 , H01L27/1463 , H01L27/14683 , H01L31/105
摘要： A photodiode having an increased proportion of light-sensitive area to light-insensitive area includes a semiconductor having a backside surface and a light-sensitive frontside surface. The semiconductor includes a first active layer having a first conductivity, a second active layer having a second conductivity opposite the first conductivity, and an intrinsic layer separating the first and second active layers. A plurality of isolation trenches are arranged to divide the photodiode into a plurality of cells. Each cell has a total frontside area including a cell active frontside area sensitive to light and a cell inactive frontside area not sensitive to light. The cell active frontside area forms at least 95 percent of the cell total frontside area. A method of forming the photodiode is also disclosed.
摘要翻译：光敏面积比例增加到光不敏感区域的光电二极管包括具有背面和感光前侧表面的半导体。半导体包括具有第一导电性的第一有源层，具有与第一导电性相反的第二导电性的第二有源层和分离第一和第二有源层的本征层。布置多个隔离沟以将光电二极管分成多个单元。每个细胞具有包括对光敏感的细胞活性前方区域和对光不敏感的细胞非活动的前侧区域的总前方区域。细胞活动前方区域形成至少95％的细胞总前方区域。还公开了一种形成光电二极管的方法。

10. 发明申请

WO2006119380A2 SILICON WAFER HAVING THROUGH-WAFER VIAS 审中-公开
标题翻译：具有穿透式六角形的硅胶片
公开(公告)号：WO2006119380A2
公开(公告)日：2006-11-09
申请号：PCT/US2006/017024
申请日：2006-05-04
申请人： ICEMOS TECHNOLOGY CORPORATION , MacNAMARA, Cormac , BROGAN, Conor , GRIFFIN, Hugh, J. , WILSON, Robin
发明人： MacNAMARA, Cormac , BROGAN, Conor , GRIFFIN, Hugh, J. , WILSON, Robin
IPC分类号： H01L21/00 , H01L31/00
CPC分类号： H01L21/76898 , B81B2207/096 , B81C1/00301 , H01L23/481 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes providing a semiconductor substrate having first and second main surfaces opposite to each other. A trench is formed in the semiconductor substrate at the first main surface. The trench extends to a first depth position in the semiconductor substrate. The trench is lined with the dielectric material. The trench is filled with a conductive material. An electrical component is electrically connected to the conductive material exposed at the first main surface. A cap is mounted to the first main surface. The cap encloses the electrical component and the electrical connection.
摘要翻译：一种制造半导体器件的方法包括提供具有彼此相对的第一和第二主表面的半导体衬底。在第一主表面上的半导体衬底中形成沟槽。沟槽延伸到半导体衬底中的第一深度位置。沟槽衬有介电材料。沟槽填充有导电材料。电气部件电连接到在第一主表面露出的导电材料。盖子安装到第一主表面。盖子包围电气部件和电气连接。

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