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1. 发明申请

WO2010062957A3 SEMI-TRANSPARENT THIN-FILM PHOTOVOLTAIC MODULES AND METHODS OF MANUFACTURE 审中-公开
标题翻译：半透明薄膜光伏组件和制造方法
公开(公告)号：WO2010062957A3
公开(公告)日：2010-08-19
申请号：PCT/US2009065921
申请日：2009-11-25
申请人： APPLIED MATERIALS INC , CUNNINGHAM KEVIN LAUGHTON , SU TZAY-FA
发明人： CUNNINGHAM KEVIN LAUGHTON , SU TZAY-FA
IPC分类号： H01L31/042
CPC分类号： H01L31/0468 , H01L31/022425 , H01L31/046 , H01L31/048 , Y02E10/50 , Y02P70/521
摘要： Semi-transparent thin-film photovoltaic modules and methods of making the same are described. A thin-film photovoltaic module comprises a transparent conductive oxide layer, a photoabsorptive layer and a reflective back contact layer. A series of scribes is created between application of each layer with some scribes rendering transparent portions of the final module.
摘要翻译：描述半透明薄膜光伏模块及其制造方法。薄膜光伏模块包括透明导电氧化物层，光吸收层和反射背接触层。一系列划线是在每层的应用与一些划线之间建立的，这些划线表现出最终模块的透明部分。

2. 发明申请

WO2007044145A3 METHOD AND APPARATUS FOR THE LOW TEMPERATURE DEPOSITION OF DOPED SILICON NITRIDE FILMS 审中-公开
公开(公告)号：WO2007044145A3
公开(公告)日：2007-04-19
申请号：PCT/US2006/033470
申请日：2006-08-29
申请人： APPLIED MATERIALS, INC. , IYER, R. Suryanarayanan , SMITH, Jacob W. , SEUTTER, Sean M. , ZHANG, Kangzhan , LAM, Andrew M. , CUNNINGHAM, Kevin L. , RAMACHANDRAN, Phani
发明人： IYER, R. Suryanarayanan , SMITH, Jacob W. , SEUTTER, Sean M. , ZHANG, Kangzhan , LAM, Andrew M. , CUNNINGHAM, Kevin L. , RAMACHANDRAN, Phani
IPC分类号： C23C16/00
摘要： A method and apparatus for low temperature deposition of doped silicon nitride films is disclosed. The improvements include a mechanical design for a CVD chamber that provides uniform heat distribution for low temperature processing and uniform distribution of process chemicals, and methods for depositing at least one layer comprising silicon and nitrogen on a substrate by heating a substrate, flowing a silicon containing precursor into a processing chamber having a mixing region defined by an adaptor ring and one or more blocker plates and an exhaust system, heating the adapter ring and a portion of the exhaust system, flowing one or more of a hydrogen, germanium, boron, or carbon containing precursor into the processing chamber, and optionally flowing a nitrogen containing precursor into the processing chamber.

3. 发明申请

WO2009126901A2 DYNAMIC SCRIBE ALIGNMENT FOR LASER SCRIBING, WELDING OR ANY PATTERNING SYSTEM 审中-公开
标题翻译：用于激光切割，焊接或任何绘图系统的动态筛选对准
公开(公告)号：WO2009126901A2
公开(公告)日：2009-10-15
申请号：PCT/US2009040232
申请日：2009-04-10
申请人： APPLIED MATERIALS INC , INAGAWA MAKOTO , KURITA SHINICHI , SHAMOUN BASSAM , KRISHNASWAMI SRIRAM , SHIRK MICHAEL D , CUNNINGHAM KEVIN L
发明人： INAGAWA MAKOTO , KURITA SHINICHI , SHAMOUN BASSAM , KRISHNASWAMI SRIRAM , SHIRK MICHAEL D , CUNNINGHAM KEVIN L
CPC分类号： B23K26/364 , B23K26/042 , B23K26/0673 , B23K26/082 , B23K26/083 , B23K26/40 , B23K2203/172
摘要： Methods and systems for improving the alignment between a previously formed feature and a subsequently formed feature are provided. An exemplary method can include laser scribing a workpiece (104, 550) having a previously formed first feature. The exemplary method includes imaging the workpiece (104, 550) with an imaging device (320, 420, 554, 640) so as to capture a plurality of positions of the first feature on the workpiece (104, 550) relative to the laser-scribing device (100). The exemplary method further includes using the captured positions to align output from the laser-scribing device (100) in order to form a second feature on the workpiece (104, 550) at a controlled distance from the first feature.
摘要翻译：提供了用于改善先前形成的特征与随后形成的特征之间的对准的方法和系统。示例性的方法可以包括激光划刻具有先前形成的第一特征的工件（104,550）。该示例性方法包括用成像装置（320,420,554,640）对工件（104,550）进行成像，以便相对于激光打印机捕获工件（104,550）上的第一特征的多个位置，划线装置（100）。该示例性方法还包括使用所捕获的位置来对齐来自激光划线装置（100）的输出，以便在距离第一特征的受控距离处在工件（104,550）上形成第二特征。

4. 发明申请

WO2010062957A2 SEMI-TRANSPARENT THIN-FILM PHOTOVOLTAIC MODULES AND METHODS OF MANUFACTURE 审中-公开
标题翻译：半透明薄膜光伏模块及其制造方法
公开(公告)号：WO2010062957A2
公开(公告)日：2010-06-03
申请号：PCT/US2009/065921
申请日：2009-11-25
申请人： APPLIED MATERIALS, INC. , CUNNINGHAM, Kevin, Laughton , SU, Tzay-Fa
发明人： CUNNINGHAM, Kevin, Laughton , SU, Tzay-Fa
IPC分类号： H01L31/042
CPC分类号： H01L31/0468 , H01L31/022425 , H01L31/046 , H01L31/048 , Y02E10/50
摘要： Semi-transparent thin-film photovoltaic modules and methods of making the same are described. A thin-film photovoltaic module comprises a transparent conductive oxide layer, a photoabsorptive layer and a reflective back contact layer. A series of scribes is created between application of each layer with some scribes rendering transparent portions of the final module.
摘要翻译：描述了半透明薄膜光伏模块及其制造方法。薄膜光伏模块包括透明导电氧化物层，光吸收层和反射背接触层。在使用每个图层与一些绘画者渲染最终模块的透明部分之间创建一系列文字。

5. 发明申请

WO2009126901A3 DYNAMIC SCRIBE ALIGNMENT FOR LASER SCRIBING, WELDING OR ANY PATTERNING SYSTEM 审中-公开
公开(公告)号：WO2009126901A3
公开(公告)日：2009-10-15
申请号：PCT/US2009/040232
申请日：2009-04-10
申请人： APPLIED MATERIALS, INC. , INAGAWA, Makoto , KURITA, Shinichi , SHAMOUN, Bassam , KRISHNASWAMI, Sriram , SHIRK, Michael D. , CUNNINGHAM, Kevin L.
发明人： INAGAWA, Makoto , KURITA, Shinichi , SHAMOUN, Bassam , KRISHNASWAMI, Sriram , SHIRK, Michael D. , CUNNINGHAM, Kevin L.
IPC分类号： H01L21/78 , H01L31/042
摘要： Methods and systems for improving the alignment between a previously formed feature and a subsequently formed feature are provided. An exemplary method can include laser scribing a workpiece (104, 550) having a previously formed first feature. The exemplary method includes imaging the workpiece (104, 550) with an imaging device (320, 420, 554, 640) so as to capture a plurality of positions of the first feature on the workpiece (104, 550) relative to the laser-scribing device (100). The exemplary method further includes using the captured positions to align output from the laser-scribing device (100) in order to form a second feature on the workpiece (104, 550) at a controlled distance from the first feature.

6. 发明申请

WO2005083762A1 GATE ELECTRODE DOPANT ACTIVATION METHOD FOR SEMICONDUCTOR MANUFACTURING 审中-公开
标题翻译：用于半导体制造的门极电极激活方法
公开(公告)号：WO2005083762A1
公开(公告)日：2005-09-09
申请号：PCT/US2005/004318
申请日：2005-02-10
申请人： APPLIED MATERIALS, INC. , MA, Yi , AHMED, Khaled, Z. , CUNNINGHAM, Kevin, L. , MCINTOSH, Robert, C. , MAYUR, Abhilash, J. , LIANG, Haifan , YAM, Mark , LEUNG, Toi, Yue, Becky , OLSEN, Christopher , WANG, Shulin , FOAD, Majeed , MINER, Gary, Eugene
发明人： MA, Yi , AHMED, Khaled, Z. , CUNNINGHAM, Kevin, L. , MCINTOSH, Robert, C. , MAYUR, Abhilash, J. , LIANG, Haifan , YAM, Mark , LEUNG, Toi, Yue, Becky , OLSEN, Christopher , WANG, Shulin , FOAD, Majeed , MINER, Gary, Eugene
IPC分类号： H01L21/28
CPC分类号： H01L21/268 , H01L21/28035 , H01L21/324
摘要： In one embodiment, the invention generally provides a method for annealing a doped layer deposited on a substrate. The method includes depositing a polycrystalline layer on a substrate surface such as a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer. The laser anneal incorporates the dopant, atoms into the crystalline lattice of the polycrystalline material.
摘要翻译：在一个实施例中，本发明通常提供一种用于退火沉积在衬底上的掺杂层的方法。该方法包括在诸如栅极氧化物层的衬底表面上沉积多晶层，并用掺杂剂注入多晶层以形成掺杂的多晶层。该方法还包括将掺杂多晶层暴露于快速热退火以便容易地将掺杂剂分布在整个多晶层中。随后，该方法包括将掺杂多晶层暴露于激光退火以激活多晶层上部的掺杂剂。激光退火将掺杂剂原子结合到多晶材料的晶格中。

7. 发明申请

WO2012007924A1 SIP-BASED CALL SESSION SERVER AND MESSAGE-ROUTING METHOD 审中-公开
标题翻译：基于SIP的电话会议服务器和消息路由方法
公开(公告)号：WO2012007924A1
公开(公告)日：2012-01-19
申请号：PCT/IB2011/053158
申请日：2011-07-14
申请人： TELEFONAKTIEBOLAGET L M ERICSSON (PUBL) , SAMAVEDAM, Sai , CUNNINGHAM, Kevin
发明人： SAMAVEDAM, Sai , CUNNINGHAM, Kevin
IPC分类号： H04L29/06 , H04L29/08
CPC分类号： H04L65/1006 , H04L45/22 , H04L45/28
摘要： A method and SIP-based Call Session Server (50) for routing SIP messages. A Network and Transport layer (53) receives an incoming SIP message and forwards it to one of a plurality of SIP message routing process instances (56a-56n) in a SIP Message Routing Framework (52). The receiving SIP message routing process instance determines a Routing-Key based upon at least one header field in the incoming message, and based upon the Routing-Key, forwards the incoming message to a selected one of a plurality of Back-to-Back User Agent (B2BUA) instances (54a~54n) in a Call Session Control Framework (51). The selected B2BUA instance creates an outgoing SIP message utilizing the Routing-Key to generate a From-Tag in an outgoing request message, or to generate a To-Tag in an outgoing response message, and then forwards the outgoing message to the Network and Transport layer (53), which transmits the outgoing message.
摘要翻译：一种用于路由SIP消息的基于SIP的呼叫会话服务器（50）。网络和传输层（53）接收传入的SIP消息并将其转发到SIP消息路由框架（52）中的多个SIP消息路由进程实例（56a-56n）之一。接收SIP消息路由过程实例基于传入消息中的至少一个报头字段来确定路由密钥，并且基于路由密钥，将传入消息转发到多个背对背用户中的所选择的一个呼叫会话控制框架中的代理（B2BUA）实例（54a〜54n）（51）。所选择的B2BUA实例使用路由密钥创建出站SIP消息，以在出局请求消息中生成从标签，或者在出局响应消息中生成To-Tag，然后将传出消息转发到网络和传输层（53），其发送传出消息。

8. 发明申请

WO2007044145A2 METHOD AND APPARATUS FOR THE LOW TEMPERATURE DEPOSITION OF DOPED SILICON NITRIDE FILMS 审中-公开
标题翻译：氮化硅薄膜低温沉积的方法与装置
公开(公告)号：WO2007044145A2
公开(公告)日：2007-04-19
申请号：PCT/US2006033470
申请日：2006-08-29
申请人： APPLIED MATERIALS INC , IYER R SURYANARAYANAN , SMITH JACOB W , SEUTTER SEAN M , ZHANG KANGZHAN , LAM ANDREW M , CUNNINGHAM KEVIN L , RAMACHANDRAN PHANI
发明人： IYER R SURYANARAYANAN , SMITH JACOB W , SEUTTER SEAN M , ZHANG KANGZHAN , LAM ANDREW M , CUNNINGHAM KEVIN L , RAMACHANDRAN PHANI
IPC分类号： H01L21/00
CPC分类号： C23C16/45565 , C23C16/345 , C23C16/4412 , C23C16/4557
摘要： A method and apparatus for low temperature deposition of doped silicon nitride films is disclosed. The improvements include a mechanical design for a CVD chamber that provides uniform heat distribution for low temperature processing and uniform distribution of process chemicals, and methods for depositing at least one layer comprising silicon and nitrogen on a substrate by heating a substrate, flowing a silicon containing precursor into a processing chamber having a mixing region defined by an adaptor ring and one or more blocker plates and an exhaust system, heating the adapter ring and a portion of the exhaust system, flowing one or more of a hydrogen, germanium, boron, or carbon containing precursor into the processing chamber, and optionally flowing a nitrogen containing precursor into the processing chamber.
摘要翻译：公开了一种用于低温沉积掺杂氮化硅膜的方法和装置。这些改进包括用于CVD室的机械设计，其提供用于低温处理的均匀热分布和工艺化学品的均匀分布，以及用于通过加热衬底在衬底上沉积至少一层包含硅和氮的方法，使含硅前体进入处理室，其具有由适配环和一个或多个阻断板和排气系统限定的混合区域，加热适配环和排气系统的一部分，其中一个或多个氢，锗，硼或含碳前体进入处理室，并任选地将含氮前体流入处理室。

9. 发明申请

WO2006107532A2 SINGLE WAFER THERMAL CVD PROCESSES FOR HEMISPHERICAL GRAINED SILICON AND NANO-CRYSTALLINE GRAIN-SIZED POLYSILICON 审中-公开
标题翻译：单晶颗粒硅和纳米晶粒尺寸多晶硅的单波长热CVD工艺
公开(公告)号：WO2006107532A2
公开(公告)日：2006-10-12
申请号：PCT/US2006/009118
申请日：2006-03-14
申请人： APPLIED MATERIALS, INC. , LI, Ming , CUNNINGHAM, Kevin , PANAYIL, Sheeba , XING, Guangcai , IYER, R. Suryanarayanan
发明人： LI, Ming , CUNNINGHAM, Kevin , PANAYIL, Sheeba , XING, Guangcai , IYER, R. Suryanarayanan
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/24 , C23C16/56 , H01L21/28035 , H01L21/28525 , H01L28/84 , H01L29/4925
摘要： Methods for depositing hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are provided. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are deposited in single substrate chemical vapor deposition chambers. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers may be used as electrode layers in semiconductor devices. In one aspect, a two step deposition process is provided to form a nanocrystalline grain-sized polysilicon layer with a reduced roughness.
摘要翻译：提供了沉积半球形硅层和纳米晶粒尺寸多晶硅层的方法。半球形硅层和纳米晶粒尺寸的多晶硅层沉积在单个基板化学气相沉积室中。半球形晶粒硅层和纳米晶粒尺寸的多晶硅层可用作半导体器件中的电极层。在一个方面，提供两步沉积工艺以形成具有减小的粗糙度的纳米晶粒尺寸的多晶硅层。

10. 发明申请

WO2006107532A3 SINGLE WAFER THERMAL CVD PROCESSES FOR HEMISPHERICAL GRAINED SILICON AND NANO-CRYSTALLINE GRAIN-SIZED POLYSILICON 审中-公开
标题翻译：单晶颗粒硅和纳米晶粒尺寸多晶硅的单波长热CVD工艺
公开(公告)号：WO2006107532A3
公开(公告)日：2009-02-12
申请号：PCT/US2006009118
申请日：2006-03-14
申请人： APPLIED MATERIALS INC , LI MING , CUNNINGHAM KEVIN , PANAYIL SHEEBA , XING GUANGCAI , IYER R SURYANARAYANAN
发明人： LI MING , CUNNINGHAM KEVIN , PANAYIL SHEEBA , XING GUANGCAI , IYER R SURYANARAYANAN
IPC分类号： H01L21/44
CPC分类号： C23C16/24 , C23C16/56 , H01L21/28035 , H01L21/28525 , H01L28/84 , H01L29/4925
摘要： Methods for depositing hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are provided. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are deposited in single substrate chemical vapor deposition chambers. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers may be used as electrode layers in semiconductor devices. In one aspect, a two step deposition process is provided to form a nanocrystalline grain-sized polysilicon layer with a reduced roughness.
摘要翻译：提供了沉积半球形硅层和纳米晶粒尺寸多晶硅层的方法。半球形硅层和纳米晶粒尺寸的多晶硅层沉积在单个基板化学气相沉积室中。半球形晶粒硅层和纳米晶粒尺寸的多晶硅层可用作半导体器件中的电极层。在一个方面，提供两步沉积工艺以形成具有减小的粗糙度的纳米晶粒尺寸的多晶硅层。

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