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1. 发明申请

WO2004038806A1 PHOTODETECTOR USING MOSFET WITH QUANTUM CHANNEL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：使用具有量子信道的MOSFET的光电转换器及其制造方法
公开(公告)号：WO2004038806A1
公开(公告)日：2004-05-06
申请号：PCT/KR2003/001658
申请日：2003-08-18
申请人： KOREA ELECTRONICS TECHNOLOGY INSTITUTE , CHOI, HONG GOO , KIM, HOON
发明人： CHOI, HONG GOO , KIM, HOON
IPC分类号： H01L29/78
CPC分类号： H01L31/1136
摘要： The present invention relates to a photodetector using MOSFET with quantum channels and a method for making thereof. A photodetector using MOSFET with quantum channels according to the present invention comprises a quantum channel formed on an activated SOI wafer; a gate oxide film covering said quantum channel; a gate formed so as to control carrier current at said quantum channel; a source and a drain formed at both ends of said channel area; and metal layers connected with said gate, said source and said drain. Thus, the photodetector according to the present invention can obtain more excellent photocurrent characteristics compared with the existing SOI MOSFET device by forming quantum channels on the SOI MOSFET. The MOSFET with quantum channels according to the present invention can be used as a good photodetector maintaining advantages of the existing MOSFET such as ease in integration and high speed.
摘要翻译：本发明涉及使用具有量子通道的MOSFET的光检测器及其制造方法。根据本发明的使用具有量子通道的MOSFET的光电检测器包括形成在激活的SOI晶片上的量子通道; 覆盖所述量子通道的栅极氧化膜; 形成为在所述量子通道处控制载流子电流的栅极; 在所述通道区域的两端形成源极和漏极; 以及与所述栅极，所述源极和所述漏极连接的金属层。因此，根据本发明的光电检测器可以通过在SOI MOSFET上形成量子通道而与现有的SOI MOSFET器件相比获得更优异的光电流特性。根据本发明的具有量子通道的MOSFET可以用作保持现有MOSFET的优点的良好光电探测器，例如易于集成和高速度。

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