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    • 1. 发明申请
    • NON-STOICHIOMETRIC TUNGSTEN CARBIDE
    • 非铁氧体硬质合金
    • WO1995028352A1
    • 1995-10-26
    • PCT/FR1995000492
    • 1995-04-13
    • RHONE-POULENC CHIMIECHARPENEL, MauriceCHASSAGNEUX, EvelyneJACQUOT, RolandMIGNANI, GérardVIALON, Marcel
    • RHONE-POULENC CHIMIE
    • C01B31/34
    • B01J27/22C01B32/949C01P2006/10C01P2006/80
    • A compound useful for tungsten- and carbon-based hydrogenation reactions, having an atomic ratio between carbon and tungsten of 0.5-2, which ratio differs by at least 1 % from the stoichiometry of any given compound (of tungsten and carbon) in the same range. The method for preparing the compound comprises (a) a pre-processing step performed in an inert gas under tungsten oxide reaction conditions, preferably in nitrogen, by heating to a temperature of 150-1000 DEG C, preferably 400-600 DEG C, advantageously for at least one hour approximately; (b) a step of reducing/carbonising the compound from step (a) by contacting it with a hydrogen- and carbon-containing body at a preferred temperature of 600-1200 DEG C, advantageously 900-1100 DEG C; (c) an optional hydrogenation/decoking step in which the compound is contacted with hydrogen and optionally an inert gas at a temperature of 600-1200 DEG C, advantageously 700-1100 DEG C, and preferably 700-900 DEG C; and (d) an optional pyrophoricity reducing step in which the compound is contacted, at a temperature of 0-50 DEG C, and preferably at around 20 DEG C, with a gas that is inert for said compound and has an oxygen content advantageously lower than 5 %, and preferably no higher than 2 %, until said compound is no longer pyrophoric. The compound is useful in organic synthesis.
    • 用于钨和碳的氢化反应的化合物,碳原子与钨的原子比为0.5-2,该比率与任何给定化合物(钨和碳)的化学计量比相差至少1% 范围。 制备该化合物的方法包括(a)在氧化钨反应条件下,优选在氮气中,通过加热到150-1000℃,优选400-600℃的温度,在惰性气体中进行预处理步骤 至少一个小时左右; (b)通过在优选的温度为600-1200℃(有利地为900-1100℃)下使其与含氢和碳的物体接触来从步骤(a)中还原/碳化化合物的步骤; (c)任选的氢化/脱焦步骤,其中化合物与氢气和任选的惰性气体在600-1200℃,有利地为700-1100℃,优选700-900℃的温度下接触; 和(d)任选的自燃还原步骤,其中所述化合物在0-50℃,优选约20℃的温度下与对所述化合物是惰性的并且具有有利地较低的氧含量的气体接触 不超过5%,优选不高于2%,直到所述化合物不再自燃。 该化合物可用于有机合成。