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    • 1. 发明申请
    • HIGHLY DOPED ELECTRO-OPTICALLY ACTIVE ORGANIC DIODE WITH SHORT PROTECTION LAYER
    • 具有短路保护层的高选择性电光有源有源二极管
    • WO2008010171A3
    • 2008-04-03
    • PCT/IB2007052802
    • 2007-07-13
    • PHILIPS INTELLECTUAL PROPERTYKONINKL PHILIPS ELECTRONICS NVBUECHEL MICHAELBERTRAM DIETRICH
    • BUECHEL MICHAELBERTRAM DIETRICH
    • H01L51/50
    • H01L51/5052H01L51/5092
    • An electro-optically active organic diode has anode electrode (102), a cathode electrode (122), an electro-optically active organic layer (110) arranged between the electrodes (102, 122) and a charge carrier organic layer (116) arranged between said electro- optically active organic layer (110) and said cathode electrode layer (122), and adjacent to said electro-optically active organic layer (110). The charge carrier organic layer (116) is formed of a highly doped organic semiconductor material. A short protection layer (120) is arranged between said cathode electrode layer (122) and said charge carrier organic layer (116), and adjacent to said cathode electrode layer (122), wherein said short protection layer (120) is formed of an inorganic semiconductor material. The short protection layer prevents direct contact between the cathode layer and the charge carrier organic layer, which reduces the risk that the cathode layer will have detrimental impact on the charge carrier organic layer. This reduces the risk of a short to occur between the cathode and the anode, which results in increased reliability of the organic diode.
    • 电光活性有机二极管具有布置在电极(102,122)和电荷载体有机层(116)之间的阳极电极(102),阴极电极(122),电光活性有机层(110) 在所述电光活性有机层(110)和所述阴极电极层(122)之间,并且与所述电光活性有机层(110)相邻。 电荷载体有机层(116)由高掺杂的有机半导体材料形成。 在所述阴极电极层(122)和所述电荷载体有机层(116)之间并且邻近所述阴极电极层(122)布置短保护层(120),其中所述短保护层(120)由 无机半导体材料。 短保护层防止阴极层和电荷载体有机层之间的直接接触,这降低了阴极层对电荷载体有机层有不利影响的风险。 这降低了在阴极和阳极之间短暂发生的风险,这导致有机二极管的可靠性增加。