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1. 发明申请

WO2008093193A1 PROCESS FOR FABRICATING A SUBSTRATE OF THE SILICON-ON-INSULATOR TYPE 审中-公开
标题翻译：用于制造绝缘体绝缘体类型的基板的方法
公开(公告)号：WO2008093193A1
公开(公告)日：2008-08-07
申请号：PCT/IB2008/000157
申请日：2008-01-23
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , NEYRET, Eric , BOEDT, François
发明人： NEYRET, Eric , BOEDT, François
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： The invention relates to a process for fabricating a substrate (6) of the SOI (silicon on insulator) type, comprising a thin silicon layer (11), the surface roughness of which is uniform, and a buried SiO2 layer, the thickness of which is uniform. This process is noteworthy in that it comprises the following steps, consisting in: a) atomic or ionic species are co-implanted which in a silicon donor substrate (1), so as to form therein a weakened zone (10) which forms the boundary between said thin layer (11) and a remainder (12); b) this donor substrate (1) is bonded to a substrate (3) by molecular adhesion, a layer (2) of silicon oxide being interposed between the two; c) and/or said remainder (12) is detached along the weakened zone (10), mainly mechanically; and d) carrying out at least one finishing step on said thin silicon layer (11) by long thermal annealing, in a gaseous atmosphere of hydrogen and/or argon, at a temperature of at least 950°C but not exceeding 1100°C.
摘要翻译：本发明涉及一种用于制造SOI（绝缘体上硅）型的衬底（6）的方法，其包括其表面粗糙度均匀的薄硅层（11）和其厚度的掩埋SiO 2层是统一的该过程值得注意的是，其包括以下步骤，其包括：a）在硅供体衬底（1）中共注入原子或离子物质，以在其中形成形成边界的弱化区（10）在所述薄层（11）和剩余部分（12）之间; b）通过分子粘附将该供体基板（1）与基板（3）结合，在二者之间插入氧化硅层（2）; c）和/或所述剩余部分（12）主要以机械方式沿弱化区域（10）分离; 以及d）在氢和/或氩的气态气氛中，在至少950℃但不超过1100℃的温度下，通过长时间热退火在所述薄硅层（11）上进行至少一个精加工步骤。

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