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1. 发明申请

WO2005055308A1 PROCESS FOR IMPROVING THE SURFACE ROUGHNESS OF A WAFER 审中-公开
标题翻译：改善波浪表面粗糙度的方法
公开(公告)号：WO2005055308A1
公开(公告)日：2005-06-16
申请号：PCT/IB2003/006380
申请日：2003-12-03
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , NEYRET, Eric , ARENE, Emmanuel , ECARNOT, Ludovic
发明人： NEYRET, Eric , ARENE, Emmanuel , ECARNOT, Ludovic
IPC分类号： H01L21/324
CPC分类号： H01L21/3247 , H01L21/02052 , H01L21/76251
摘要： The present invention relates to a process for reducing the roughness of the free surface of a semiconductor wafer, said process comprising a single annealing step for smoothing said free surface, said single annealing step being carried out as a RTA under an atmosphere of pure argon, characterized in that before the RTA the atmosphere of the annealing environment is purged in a controlled manner so as to establish a controlled purged atmosphere allowing reduction of preliminary pollutants on the wafer.
摘要翻译：本发明涉及一种降低半导体晶片的自由表面粗糙度的方法，所述方法包括用于使所述自由表面平滑的单一退火步骤，所述单个退火步骤在纯氩气氛下作为RTA进行，其特征在于，在RTA之前，以受控的方式清除退火环境的气氛，以便建立受控的吹扫气氛，从而减少晶片上的初步污染物。

2. 发明申请

WO2004077553A1 RELAXATION OF A THIN LAYER AT A HIGH TEMPERATURE AFTER ITS TRANSFER 审中-公开
标题翻译：转移后高温下的薄层放松
公开(公告)号：WO2004077553A1
公开(公告)日：2004-09-10
申请号：PCT/IB2004/000931
申请日：2004-03-01
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , GHYSELEN, Bruno , MAZURE, Carlos , ARENE, Emmanuel
发明人： GHYSELEN, Bruno , MAZURE, Carlos , ARENE, Emmanuel
IPC分类号： H01L21/763
CPC分类号： H01L21/76259 , H01L21/76254
摘要： The invention relates to a method for forming a relaxed or pseudo-relaxed layer on a substrate, the relaxed layer being in a material selected from among semiconductor materials, comprising the following steps: a) growing on a donor substrate (1) an elastically strained layer (2) constituted by at least a material chosen from among the semiconductor materials; b) forming on the strained layer (2), or on a receiver substrate (7), a vitreous layer (4) made of a material which is viscous above a viscosity temperature of more than about 900°C; c) bonding the receiver substrate (7) to the strained layer (2) by means of the vitreous layer (4) formed in step (b); d) removing the donor substrate (1), so as to form a structure (20) comprising the receiver substrate, the vitreous layer (4) and the strained layer (2); e) thermal treating the structure at a temperature close to or above the viscosity temperature, so as to relax at least a part of the constraints in the strained layer (2).
摘要翻译：本发明涉及一种用于在衬底上形成松弛或假松弛层的方法，所述松弛层是选自半导体材料的材料，包括以下步骤：a）在施主衬底（1）上生长弹性应变至少由选自半导体材料的材料构成的层（2） b）在应变层（2）上或在接收器基底（7）上形成玻璃质层（4），所述玻璃质层（4）由粘度高于大约900℃的粘度的材料制成; c）通过步骤（b）中形成的玻璃质层（4）将接收器衬底（7）接合到应变层（2）; d）去除施主衬底（1），以形成包括接收衬底，玻璃质层（4）和应变层（2）的结构（20）; e）在接近或高于粘度温度的温度下热处理该结构，以便使应变层（2）中的至少一部分约束松弛。

3. 发明申请

WO2004077552A1 RELAXATION OF A THIN LAYER AFTER ITS TRANSFER 审中-公开
标题翻译：转移后薄层的放松
公开(公告)号：WO2004077552A1
公开(公告)日：2004-09-10
申请号：PCT/IB2004/000927
申请日：2004-03-01
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , GHYSELEN, Bruno , MAZURE, Carlos , ARENE, Emmanuel
发明人： GHYSELEN, Bruno , MAZURE, Carlos , ARENE, Emmanuel
IPC分类号： H01L21/762
CPC分类号： H01L21/324 , H01L21/76254 , H01L21/76259
摘要： The invention relates to a method of forming a relaxed or pseudo-relaxed layer on a substrate, the relaxed layer (2’) being in a material selected from semiconductior materials, characterized in that the method comprises the following steps: (a) growing on a donor substrate (1) an elastically strained layer (2) consisting of at least a material selected among the semiconductor materials; (b) forming on the strained layer (2) or on a receiving substrate (7), a vitreous layer (4) made of a material viscous from a viscosity temperature; (c) bonding the receiving substrate (7), to the strained layer (2) via the vitreous layer (4); (d) removing a portion of the donor substrate (1), so as to form a structure comprising the receiving substrate (2), the vitreous layer (4), the strained layer (2) and the unremoved portion of the donor substrate (1) which thereby forms a surface layer (1B); (e) heat treating the structure at a temperature close to or higher than the viscosity temperature. The invention further relates to structures obtained during the method of forming a relaxed or pseudo-relaxed layer on a substrate.
摘要翻译：本发明涉及一种在衬底上形成松弛或假松弛层的方法，所述松弛层（2'）是选自半导体材料的材料，其特征在于该方法包括以下步骤：（a）供体衬底（1）由至少由半导体材料中选择的材料组成的弹性应变层（2）; （b）在应变层（2）或接收基板（7）上形成玻璃质层（4），其由粘度为粘性的材料制成; （c）经由玻璃质层（4）将接收基板（7）接合到应变层（2）; （d）去除供体衬底（1）的一部分，以便形成包括接收衬底（2），玻璃质层（4），应变层（2）和供体衬底的未移动部分 1），由此形成表面层（1B）; （e）在接近或高于粘度温度的温度下对结构进行热处理。本发明还涉及在衬底上形成松弛或假松弛层的方法期间获得的结构。

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