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2. 发明申请

WO2008143727A2 NANOWIRE PHOTODETECTOR AND IMAGE SENSOR WITH INTERNAL GAIN 审中-公开
标题翻译： NANOWIRE光电和图像传感器内部增益
公开(公告)号：WO2008143727A2
公开(公告)日：2008-11-27
申请号：PCT/US2008002529
申请日：2008-02-26
申请人： UNIV CALIFORNIA , WANG DELI , SOCI CESARE , LO YU-HWA , ZHANG ARTHUR , APLIN DAVID , WANG LINGQUAN , DAYEH SHADI , BAO XIN YU
发明人： WANG DELI , SOCI CESARE , LO YU-HWA , ZHANG ARTHUR , APLIN DAVID , WANG LINGQUAN , DAYEH SHADI , BAO XIN YU
IPC分类号： H01L27/146
CPC分类号： H01L31/035227 , B82Y20/00 , H01L27/14643 , H01L31/035236
摘要： A practical ID nanowire photodetector with high gain that can be controlled by a radial electric field established in the ID nanowire. A ID nanowire photodetector device of the invention includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to the nanowire inhibits photo-carrier recombination, thus enhancing the photocurrent response. The invention further provides circuits of ID nanowire photodetctors, with groups of photodetctors addressed by their individual ID nanowires electrode contacts. The invention also provides a method for placement of ID nanostructures, including nanowires, with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of ID nanostructures. The ID nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the ID nanostructures in predetermined, registered positions on the substrate.
摘要翻译：具有高增益的实用的ID纳米线光电探测器，其可以通过在ID纳米线中建立的径向电场来控制。本发明的ID纳米线光电探测器器件包括一个纳米线，该纳米线被电极单独接触，用于施加驱动光电流的纵向电场。对纳米线的固有径向电场抑制光载流子复合，从而增强光电流响应。本发明还提供了ID纳米线光电子器件的电路，其具有由它们的各自的ID纳米线电极接触器寻址的光电子束组。本发明还提供了一种用于将ID纳米结构（包括纳米线）放置在衬底上的方法。用诸如光致抗蚀剂的材料对衬底进行图案化，并且在图案化材料中在预定位置形成沟槽以放置ID纳米结构。将ID纳米结构在液体悬浮液中排列，然后从液体悬浮液转移到沟槽中。去除图案形成材料将ID纳米结构放置在基板上的预定的注册位置。

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