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1. 发明申请

WO1993011569A1 MAGNETORESISTANT ELEMENT AND MANUFACTURING PROCESS THEREOF 审中-公开
标题翻译：磁阻元件及其制造工艺
公开(公告)号：WO1993011569A1
公开(公告)日：1993-06-10
申请号：PCT/JP1992001581
申请日：1992-12-03
申请人： NIPPONDENSO CO., LTD. , SUZUKI, Yasutoshi , AO, Kenichi , UENOYAMA, Hirofumi , NOGUCHI, Hiroki , EGUCHI, Koji , ITO, Ichiro , YOSHINO, Yoshimi
发明人： NIPPONDENSO CO., LTD.
IPC分类号： H01L43/08
CPC分类号： H01L43/08
摘要： A magnetoresistant element used for magnetic sensors etc., which is manufactured by so forming a thin film of a ferromagnetoresistant element as to be superimposed on the end part of an aluminum wiring metal provided on a substrate, by connecting electrically the thin film of the ferromagnetoresistant element to the aluminum wiring metal, and by subjecting both of them to a vacuum heat treatment at a temperature of 350-450 DEG C. By the vacuum heat treatment, an Ni-Al alloy is formed in the connection part of the aluminum wiring metal and the thin film of the ferromagnetoresistant element. Subsequently, even if by a plasma CVD process, on the surface of the alloy, formed is a surface protective film made of silicon nitride, the surface of the aluminum wiring metal on the connection part is prevented from the being nitrided by virtue of the Ni-Al alloy. Therefore, the surface of the alloy can be protected by silicon nitride excelling in moisture resistance, and in addition to this, the resistance of the junction of the thin film of the ferromagnetoresistant element and the wiring metal can be suppressed from increasing accompanied by the formation of this surface protective film. Also, to suppress this increase of the junction resistance, it is allowable that the thin film of the ferromagnetoresistant element and the aluminum wiring metal are connected by another conductor metal. As the conductor metal, TiW, TiN, Ti, Zr, etc. are preferable. Also, a second aluminum wiring metal is usable, when the conductor metal is provided on the upper layers side of the thin film of the ferromagnetoresistant element. Further, usable is the surface protective film of a multilayer type, whose lower layer side is a film containing no nitrogen, such as a silicon oxide film, and whose upper layer side is a surface protective film made of silicon nitride.
摘要翻译：用于磁传感器等的磁阻元件，其通过以下方式制造：通过将设置在基板上的铝布线金属的端部上叠加形成铁磁阻抗元件的薄膜，通过将铁磁性电阻薄膜并且在350-450℃的温度下对它们进行真空热处理。通过真空热处理，在铝布线金属的连接部分中形成Ni-Al合金和铁磁性元件的薄膜。随后，即使通过等离子体CVD工艺，在合金表面上形成由氮化硅制成的表面保护膜，也可以防止连接部分上的铝布线金属的表面被Ni -Al合金。因此，合金的表面可以通过氮化硅的耐湿性得到保护，除此之外，可以抑制铁磁性元素的薄膜与布线金属的接合电阻随着形成而增加的表面保护膜。此外，为了抑制接合电阻的增加，可以通过另一种导体金属连接铁磁阻抗元件的薄膜和铝布线金属。作为导体金属，优选TiW，TiN，Ti，Zr等。此外，当导体金属设置在铁磁性元件的薄膜的上层侧时，可以使用第二铝布线金属。此外，可以使用下层侧为不含氮的膜的多层型表面保护膜，例如氧化硅膜，上层侧为氮化硅制的表面保护膜。

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