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1. 发明申请

WO2006115393A1 AUTO-STOPPING ABRASIVE COMPOSITION FOR POLISHING HIGH STEP HEIGHT OXIDE LAYER 审中-公开
标题翻译：自动停止磨料组合物，用于抛光高温高氧化层
公开(公告)号：WO2006115393A1
公开(公告)日：2006-11-02
申请号：PCT/KR2006/001619
申请日：2006-04-28
申请人： TECHNO SEMICHEM CO., LTD. , AHN, Jung-Ryul , PARK, Jong-Kwan , KIM, Seok-Ju , JEONG, Eun-Il , HAN, Deok-Su , PARK, Hyu-Bum , BAEK, Kui-Jong , LEE, Tae-Kyeong
发明人： AHN, Jung-Ryul , PARK, Jong-Kwan , KIM, Seok-Ju , JEONG, Eun-Il , HAN, Deok-Su , PARK, Hyu-Bum , BAEK, Kui-Jong , LEE, Tae-Kyeong
IPC分类号： C09K3/14
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： The present invention relates to a chemical - mechanical polishing composition which is employed in a process for chemical -mechanical polishing of silicon oxide layer having severe unevenness with large step-height in manufacturing technology of semiconductor device and a process for chemical -mechanical polishing using the same, which has auto- stopping function that the rate of polishing is much lowered after planarization by removing step-height, being characterized in that it comprises i) abrasive particles of metal oxide; and ii) at least one compound (s) selected from the group consisting of amino alcohols, hydroxycarboxylic acid having at least 3 of the total number of carboxylic acid group (s) and hydroxyl group (s) or their salts, or a mixture thereof . In the composition of the invention, a polymeric organic acid, a preservative, a lubricant and a surfactant may be further contained. The auto- stopping polishing composition according to the present invention provides effects of shortening the vapor -deposit ion time of a layer to be polished, saving the raw material to be vapor- deposited, shortening the chemical -mechanical polishing time, and saving the slurry employed. Thus, according to the present invention, the material cost is reduced and the process time is shortened, and increase of the process margin through the auto- stopping function of the polishing rate advantageously results in enhanced productivity.
摘要翻译：本发明涉及一种化学机械抛光组合物，该化学机械抛光组合物用于半导体器件的制造技术中具有大步长的具有严重不均匀性的氧化硅层的化学机械抛光方法和使用该半导体器件的化学机械抛光方法相同的，具有自动停止功能，通过去除步骤高度，平面化后抛光速率大大降低，其特征在于它包括i）金属氧化物的磨料颗粒; 和ii）至少一种选自氨基醇，具有至少3个羧基基团和羟基或其盐的羟基羧酸的化合物或其混合物。在本发明的组合物中，可以进一步包含聚合有机酸，防腐剂，润滑剂和表面活性剂。根据本发明的自动停止抛光组合物提供了缩短待抛光层的蒸气沉积离子时间的效果，节省了原料蒸汽沉积，缩短了化学机械抛光时间，并节省了浆料采用。因此，根据本发明，材料成本降低，处理时间缩短，并且通过抛光速度的自动停止功能增加工艺余量有利地提高了生产率。

2. 发明申请

WO2010011080A3 CHEMICAL MECHANICAL POLISHING COMPOSITION CONTAINING POLYSILICON POLISH FINISHER 审中-公开
标题翻译：含多硅抛光剂的化学机械抛光组合物
公开(公告)号：WO2010011080A3
公开(公告)日：2010-05-14
申请号：PCT/KR2009004055
申请日：2009-07-22
申请人： TECHNO SEMICHEM CO LTD , PARK HYU-BUM , KIM DAE-SUNG , PARK JONG-KWAN , AHN JUNG-RYUL
发明人： PARK HYU-BUM , KIM DAE-SUNG , PARK JONG-KWAN , AHN JUNG-RYUL
IPC分类号： C09K3/14
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： The present invention relates to a chemical mechanical polishing (CMP) composition used for polishing a semiconductor device which contains polysilicon film and insulator, and a chemical mechanical polishing method thereof. The CMP composition is especially useful in a lower isolation CMP process for semiconductor devices. Provided is a highly selective CMP composition containing a polysilicon polish finisher which can selectively polish semiconductor insulators since it uses a polysilicon film as a polish finishing film.
摘要翻译：本发明涉及一种用于抛光包含多晶硅膜和绝缘体的半导体器件的化学机械抛光（CMP）组合物及其化学机械抛光方法。 CMP组合物在用于半导体器件的较低隔离度CMP工艺中特别有用。本发明提供一种含有多晶硅抛光修整剂的高选择性CMP组合物，其能够选择性抛光半导体绝缘体，因为其使用多晶硅膜作为抛光修饰膜。

3. 发明申请

WO2007114583A1 CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER COMPRISING ZEOLITE 审中-公开
标题翻译：用于包含沸石的铜的化学机械抛光组合物
公开(公告)号：WO2007114583A1
公开(公告)日：2007-10-11
申请号：PCT/KR2007/001536
申请日：2007-03-29
申请人： TECHNO SEMICHEM CO., LTD. , JEONG, Eun-Il , PARK, Hyu-Bum , KIM, Seok-Ju , HAN, Deok-Su , AHN, Jung-Ryul , PARK, Jong-Kwan , BAEK, Kui-Jong
发明人： JEONG, Eun-Il , PARK, Hyu-Bum , KIM, Seok-Ju , HAN, Deok-Su , AHN, Jung-Ryul , PARK, Jong-Kwan , BAEK, Kui-Jong
IPC分类号： C09K3/14
CPC分类号： H01L21/3212 , C09G1/02
摘要： The present invention relates to a novel slurry composition for copper polishing, comprising zeolite which is a porous crystalline material for CMP of copper film in a semiconductor manufacturing process. The slurry composition according to the present invention comprises zeolite, an oxidant and a polish promoting agent and may further comprise a corrosion inhibitor, a surfactant, an aminoalcohol, an antiseptic and a dispersion agent and pH is in a range of 1 to 7. The zeolite slurry according to the present invention has advantages of absorbing and removing metal cation generated in CMP process by using zeolite and having a low levelof scratches as the zeolite has micropores therein and thus its hardness is low. The slurry composition using zeolite of the present invention is usable to both first and second step polishing of copper damascene process and particularly useful as the first step polishing slurry for copper.
摘要翻译：本发明涉及一种用于铜抛光的新型浆料组合物，其包含沸石，其是在半导体制造工艺中用于铜膜的CMP的多孔结晶材料。根据本发明的浆料组合物包含沸石，氧化剂和抛光促进剂，并且还可以包含腐蚀抑制剂，表面活性剂，氨基醇，防腐剂和分散剂，并且pH在1至7的范围内。根据本发明的沸石浆料具有通过使用沸石吸收和除去CMP工艺中产生的金属阳离子并具有低沸点划痕的优点，因为沸石在其中具有微孔，因此其硬度低。使用本发明的沸石的浆料组合物可用于铜镶嵌工艺的第一和第二阶段抛光，并且特别用作铜的第一步抛光浆料。

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