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1. 发明申请

WO2013024386A2 SYSTEM FOR A CONTACTLESS CONTROL OF A FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：一种场效应晶体管的接触控制系统
公开(公告)号：WO2013024386A2
公开(公告)日：2013-02-21
申请号：PCT/IB2012/053917
申请日：2012-07-31
申请人： HALAHMI, Erez , 0EC SA
发明人： HALAHMI, Erez
IPC分类号： H01L29/78
CPC分类号： H03K17/94 , G01N27/414 , H01L29/78
摘要： The invention stems from the realization that it is possible to control the electric field in the gate region of a field effect transistor (MOS, FET etc.) without changing the net charge of the gate electrode or without resorting to electrical conduction. According to an aspect of the invention, the electric field is changed by modifying the charge distribution within the gate electrode without materially adding or subtracting charge carriers to it or changing its net charge. This is achieved by displacing one or more sources of electric field, for example free charges, or conductive or non - conductive surface charges in the proximity of the gate electrode. By electric induction, the electric field produce a separation of charges in the gate electrode and an alteration in the conduction state of the FET transistor
摘要翻译：本发明是由于可以在不改变栅电极的净电荷的情况下控制场效应晶体管（MOS，FET等）的栅极区域的电场，也可以不借助于电导通来控制电场。根据本发明的一个方面，通过改变栅电极内的电荷分布来改变电场，而不用大量地加或减电荷载体或改变其净电荷。这通过在栅极附近置换一个或多个电场源，例如自由电荷或导电或非导电表面电荷来实现。通过电感应，电场产生栅电极中的电荷分离和FET晶体管的导通状态的改变

2. 发明申请

WO2013024386A3 SYSTEM FOR A CONTACTLESS CONTROL OF A FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：一种场效应晶体管的接触控制系统
公开(公告)号：WO2013024386A3
公开(公告)日：2013-07-04
申请号：PCT/IB2012053917
申请日：2012-07-31
申请人： HALAHMI EREZ , 0EC SA
发明人： HALAHMI EREZ
IPC分类号： H01L29/78 , G01N27/414 , H01L31/113
CPC分类号： H03K17/94 , G01N27/414 , H01L29/78
摘要： The invention stems from the realization that it is possible to control the electric field in the gate region of a field effect transistor (MOS, FET etc.) without changing the net charge of the gate electrode or without resorting to electrical conduction. According to an aspect of the invention, the electric field is changed by modifying the charge distribution within the gate electrode without materially adding or subtracting charge carriers to it or changing its net charge. This is achieved by displacing one or more sources of electric field, for example free charges, or conductive or non - conductive surface charges in the proximity of the gate electrode. By electric induction, the electric field produce a separation of charges in the gate electrode and an alteration in the conduction state of the FET transistor.
摘要翻译：本发明是由于可以在不改变栅电极的净电荷的情况下控制场效应晶体管（MOS，FET等）的栅极区域的电场，也可以不借助于电导通来控制电场。根据本发明的一个方面，通过改变栅电极内的电荷分布来改变电场，而不用大量地加或减电荷载体或改变其净电荷。这通过在栅极附近置换一个或多个电场源，例如自由电荷或导电或非导电表面电荷来实现。通过电感应，电场产生栅电极中的电荷分离和FET晶体管的导通状态的改变。

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