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1. 发明申请

WO2021177978A1 SYSTEM AND METHOD FOR DISTRIBUTING MULTIMEDIA CONTENT 审中-公开
公开(公告)号：WO2021177978A1
公开(公告)日：2021-09-10
申请号：PCT/US2020/021583
申请日：2020-03-06
申请人： HUBBARD, Robert B.
发明人： HUBBARD, Robert B.
IPC分类号： G06Q30/02 , H04L29/08 , H04W4/24 , H04H60/33 , H04L29/06
摘要： A system for transmitting, receiving and outputting multimedia content and provide confirmation of viewing of same including a server for transmitting multimedia content via a network, said content containing audio as well as video content; a system for receiving and viewing television content; a mobile computing and communications platform for automatically providing a signal to the server effective to confirm viewing of the content on a television by a user. In illustrative embodiments, the system is adapted to store and execute software with code for automatically detecting and selecting alternate platforms for viewing the content, including television, mobile, personal computing and gaming platforms. Code is included for sending the content from one alternate platform to another. In addition, multiple confirmation modes are taught including user prompts, eye tracking, reading of embedded QR codes and automatic content recognition.

2. 发明申请

WO2021016498A1 ADVANCED SPATIAL LIGHT MODULATORS, ASSOCIATED SYSTEMS AND METHODS 审中-公开
公开(公告)号：WO2021016498A1
公开(公告)日：2021-01-28
申请号：PCT/US2020/043352
申请日：2020-07-23
申请人： SYGHT, INC
发明人： PARTEE, Charles C. , MCKINSTRY, Kevin D. , MACHADO, Michael G.
IPC分类号： G02B26/08 , G02F1/09 , G02F1/01
摘要： A spatial light modulator system includes a concentration layer including an array of optical concentrators, such that each concentrator concentrates a portion of an input light beam. A modulation layer includes an array of light modulators each in optical communication with one of the optical concentrators for modulating the portion of the input light beam. The light modulators are spaced apart from one another in the modulation layer to form gaps between adjacent ones of the light modulators. A coil of each light modulator can surround a Faraday element or core containing a Faraday material to control a magnetic state of a Faraday material responsive to control signals.

3. 发明申请

WO2019241082A1 STRAIN CONTROL IN OPTOELECTRONIC DEVICES 审中-公开
公开(公告)号：WO2019241082A1
公开(公告)日：2019-12-19
申请号：PCT/US2019/036174
申请日：2019-06-07
申请人： LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
发明人： VOSS, Lars F. , LEISHER, Paul O.
IPC分类号： H01L21/67 , H01L21/324 , H01L27/15 , H01L33/00 , H01L29/861 , H01L27/08
摘要： A coating having a mismatched coefficient of thermal expansion is applied to an underlying light emitting diode (LED) or laser diode (LD), such that as the temperature of the device changes, a varying level of strain is introduced to the underlying LED or LD. Because strain can also adjust the effective bandgap energy (and hence emission wavelength) of the device, the external strain-inducing coating can act to either compensate for the wavelength shift due to temperature (resulting in reduced d?/dT) or accentuate it (resulting in increased d?/dT). By proper selection of coating material and geometry, full control over d?/dT can be achieved.

4. 发明申请

WO2019027712A1 CONVERGENT X-RAY IMAGING DEVICE AND METHOD 审中-公开
公开(公告)号：WO2019027712A1
公开(公告)日：2019-02-07
申请号：PCT/US2018/043342
申请日：2018-07-23
申请人： LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
发明人： BARTY, Christopher P.J.
IPC分类号： A61B6/00
摘要： Techniques are provided for the production of high-contrast, x-ray and/or gamma-ray radiographic images. The images have minimal contributions from object-dependent background radiation. The invention utilizes the low divergence, quasi-monoenergetic, x-ray or gamma-ray output from a laser-Compton source in combination with x-ray optical technologies to produce a converging x-ray or gamma-ray beam with which to produce a high-contrast, shadowgraph of a specific object. The object to be imaged is placed within the path of the converging beam between the x-ray optical assembly and the focus of the x-ray beam produced by that assembly. The beam is then passed through an optically thick pinhole located at the focus of the beam. Downstream of the pinhole, the inverted shadowgraph of the object is then recorded by an appropriate 2D detector array.

5. 发明申请

WO2018231494A1 LATERAL FIN STATIC INDUCTION TRANSISTOR 审中-公开
公开(公告)号：WO2018231494A1
公开(公告)日：2018-12-20
申请号：PCT/US2018/034462
申请日：2018-05-24
申请人： HRL LABORATORIES, LLC
发明人： HUANG, Biqin
IPC分类号： H01L29/78 , H01L29/66 , H01L29/739
摘要： Presented is a lateral fin static induction transistor including a semi conductive substrate, source and drain regions extending from an optional buffer layer of same or varied thickness supported by the semi conductive substrate, a semi conductive channel electrically coupling the source region to the drain region of the transistor, a portion of the semi conductive channel being a fin and having a face covered by a gated structure, thereby defining a gated channel within the semi conductive channel, the semi conductive channel further including a drift region electrically coupling the gated channel to the drain region of the transistor.

6. 发明申请

WO2018222505A1 SYSTEM FOR IMPROVING THE LASER DAMAGE THRESHOLD OF MULTILAYER DIELECTRIC GRATINGS 审中-公开
公开(公告)号：WO2018222505A1
公开(公告)日：2018-12-06
申请号：PCT/US2018/034498
申请日：2018-05-24
申请人： LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
发明人： NGUYEN, Hoang T. , BRITTEN, Jerald A.
IPC分类号： H01S3/10 , H01S3/08 , H01S5/12
摘要： A system configuration that significantly improves the laser damage threshold of multi-layer dielectric gratings for lasers applications includes three main sections: 1) a laser module, 2) a TM polarization module, and 3) a multi-layer dielectric grating optimized for high efficiency operation with transverse magnetic polarized laser light.

7. 发明申请

WO2018212839A1 K-9 TRAINING AIDS MADE USING ADDITIVE MANUFACTURING AND EXPLOSIVES MIMIC FOR TESTING, TRAINING, AND MONITORING 审中-公开
公开(公告)号：WO2018212839A1
公开(公告)日：2018-11-22
申请号：PCT/US2018/025584
申请日：2018-03-30
申请人： LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
发明人： REYNOLDS, John G. , DURBAN, Matthew M. , GASH, Alexander E. , GRAPES, Michael D. , KELLEY, Ryan S. , SULLIVAN, Kyle T.
IPC分类号： F41H11/132 , A01K15/02 , B33Y10/00 , B33Y80/00 , C06B45/14 , B33Y70/00 , C06B31/02 , F41H11/12 , G09B9/00 , G09B19/00
CPC分类号： C06B45/12 , A01K15/02 , B33Y10/00 , B33Y70/00 , B33Y80/00 , F41H11/12 , F41H11/132
摘要： Additive Manufacturing (AM) is used to make aids that target the training of K-9s to detect explosives and make mimics for explosives. The process uses mixtures of explosives and matrices commonly used in AM. The explosives are formulated into a mixture with the matrix and printed using AM techniques and equipment. The explosive concentrations are kept less than 10% by wt. of the mixture to conform to requirements of shipping and handling.

8. 发明申请

WO2017218140A1 HALBACH-ARRAY CONFIGURATION 审中-公开
标题翻译：哈巴赫阵列配置
公开(公告)号：WO2017218140A1
公开(公告)日：2017-12-21
申请号：PCT/US2017/033692
申请日：2017-05-19
申请人： LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
发明人： POST, Richard F.
IPC分类号： H02K7/09 , F16C32/04
摘要： Novel configurations of levitating passive magnetic bearing configurations are described. Such configurations can be used for the precise control of the magnitude and sign of the bearing stiffness, thereby facilitating the overall design of the system in ways that are not possible with conventional attractive or repelling bearing elements.
摘要翻译：描述了悬浮无源磁轴承配置的新颖配置。这种结构可用于精确控制轴承刚度的大小和符号，从而有助于系统的总体设计，而传统的吸引或排斥轴承元件是不可能的。

9. 发明申请

WO2017087197A1 III-NITRIDE FIELD-EFFECT TRANSISTOR WITH DUAL GATES 审中-公开
标题翻译：具有双栅极的III-氮化物场效应晶体管
公开(公告)号：WO2017087197A1
公开(公告)日：2017-05-26
申请号：PCT/US2016/060863
申请日：2016-11-07
申请人： HRL LABORATORIES, LLC
发明人： CHU, Rongming
IPC分类号： H01L29/78 , H01L29/423 , H01L29/10
CPC分类号： H01L29/2003 , H01L29/4236 , H01L29/66522 , H01L29/7831
摘要： A field effect transistor (FET) includes a III-nitride channel layer, a III-nitride barrier layer on the channel layer, a first dielectric on the barrier layer, a first gate trench extending through the first dielectric, and partially or entirely through the barrier layer, a second dielectric on a bottom and walls of the first gate trench, a source electrode on a first side of the first gate trench, a drain electrode on a second side of the first gate trench opposite the first side, a first gate electrode on the second dielectric and filling the first gate trench, a third dielectric between the first gate trench and the drain electrode, a second gate trench extending through the third dielectric and laterally located between the first gate trench and the drain electrode, and a second gate electrode filling the second gate trench.
摘要翻译：场效应晶体管（FET）包括III族氮化物沟道层，沟道层上的III族氮化物势垒层，势垒层上的第一电介质，延伸穿过第一栅极沟槽的第一栅极沟槽并且部分地或完全地穿过所述阻挡层，在所述第一栅极沟槽的底部和壁上的第二电介质，在所述第一栅极沟槽的第一侧上的源极电极，在所述第一栅极沟槽的第二侧上的漏极电极与所述第一侧相对，在所述第二电介质上并且填充所述第一栅极沟槽的第一栅电极，在所述第一栅极沟槽和所述漏极电极之间的第三电介质，延伸穿过所述第三电介质并且横向地位于所述第一栅极沟槽和漏电极，以及填充第二栅极沟槽的第二栅电极。

10. 发明申请

WO2017039635A1 III NITRIDE COMPLEMENTARY TRANSISTORS 审中-公开
公开(公告)号：WO2017039635A1
公开(公告)日：2017-03-09
申请号：PCT/US2015/047835
申请日：2015-08-31
申请人： HRL LABORATORIES, LLC
发明人： CHU, Rongming , CAO, Yu
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L23/535 , H01L27/092 , H01L29/0649 , H01L29/2003 , H01L29/4236 , H01L29/513 , H01L29/66462 , H01L29/66522 , H01L29/7786 , H01L29/7787 , H01L29/78
摘要： A semiconductor device includes a substrate, a III- nitride buffer layer on the substrate, an N-channel transistor including a Ill-nitride N-channel layer on one portion of the buffer layer, and a Ill-nitride N-barrier layer for providing electrons on top of the N-channel layer, wherein the N-barrier layer has a wider bandgap than the N-channel layer, a P-channel transistor including a Ill-nitride P-barrier layer on another portion of the buffer layer for assisting accumulation of holes, a III- nitride P-channel layer on top of the P-barrier layer, wherein the P-barrier layer has a wider bandgap than the P- channel layer, and a Ill-nitride cap layer doped with P- type dopants on top of the P-channel layer.
摘要翻译：半导体器件包括衬底，衬底上的III族氮化物缓冲层，在缓冲层的一部分上包括III族氮化物N沟道层的N沟道晶体管和用于提供电子在N沟道层的顶部，其中N阻挡层具有比N沟道层更宽的带隙，P沟道晶体管包括在缓冲层的另一部分上的III族氮化物P势垒层，用于辅助空穴的累积，P型势垒层顶部的III族氮化物P沟道层，其中P型势垒层具有比P-沟道层更宽的带隙，以及掺杂有P型的III族氮化物覆盖层掺杂剂在P沟道层的顶部。

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