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81. 发明申请

WO2006010914A1 IMPROVED DEPOSITION PROCESS 审中-公开
标题翻译：改进沉积工艺
公开(公告)号：WO2006010914A1
公开(公告)日：2006-02-02
申请号：PCT/GB2005/002909
申请日：2005-07-26
申请人： OXONICA MATERIALS LIMITED , GARDENER, Martin, Ryan , WAKEFIELD, Gareth
发明人： GARDENER, Martin, Ryan , WAKEFIELD, Gareth
IPC分类号： C23C16/18
CPC分类号： C23C18/1216 , C23C4/123 , C23C18/08 , C23C18/1279 , C23C18/1291 , C23C26/00 , H01L21/02565 , H01L21/02628
摘要： A deposition process which is suitably for depositing metal oxide thin films, such as films of transparent conducting oxides, onto a substrate, comprises feeding a decomposable metal-polymer composition (5) to a nebuliser (7) with a carrier gas, to form an aerosol. The aerosol is contacted with a substrate (11), which is heated to or above the decomposition temperature of the polymer, causing metal oxide to be deposited on the substrate.
摘要翻译：适合用于将诸如透明导电氧化物的薄膜的金属氧化物薄膜沉积到衬底上的沉积工艺包括将可分解的金属 - 聚合物组合物（5）与载气一起供入雾化器（7）中以形成气雾剂。气溶胶与加热至聚合物分解温度以上的基板（11）接触，导致金属氧化物沉积在基板上。

82. 发明申请

WO2005081933A2 CHEMICAL VAPOR DEPOSITION OF HIGH CONDUCTIVITY, ADHERENT THIN FILMS OF RUTHENIUM 审中-公开
标题翻译：高电导率的化学气相沉积，RENHENIUM的薄膜
公开(公告)号：WO2005081933A2
公开(公告)日：2005-09-09
申请号：PCT/US2005/005609
申请日：2005-02-23
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , HENDRIX, Bryan, C. , WELCH, James, J. , BILODEAU, Steven, M. , ROEDER, Jeffrey, F. , XU, Chongying , BAUM, Thomas, H.
发明人： HENDRIX, Bryan, C. , WELCH, James, J. , BILODEAU, Steven, M. , ROEDER, Jeffrey, F. , XU, Chongying , BAUM, Thomas, H.
IPC分类号： C23C16/00 , C23C16/02 , C23C16/16 , C23C16/18 , C23C16/44 , C23C16/455
CPC分类号： C23C16/45557 , C23C16/0272 , C23C16/16 , C23C16/18
摘要： A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
摘要翻译：描述了一种用于沉积具有高导电性和优异的基底附着性的钌薄膜的多步法。该方法包括沉积钌成核层，随后沉积高度导电的钌上层。使用低沉积速率的化学气相沉积（CVD）沉积两层。

83. 发明申请

WO2005017950A3 ORGANOIRIDIUM COMPOUND, PROCESS FOR PRODUCING THE SAME, AND PROCESS FOR PRODUCING FILM 审中-公开
标题翻译：有机金属化合物，其生产方法和制造膜的方法
公开(公告)号：WO2005017950A3
公开(公告)日：2005-03-31
申请号：PCT/JP2004011796
申请日：2004-08-11
申请人： TOSOH CORP , SAGAMI CHEM RES , KAWANO KAZUHISA , TAKAMORI MAYUMI , OSHIMA NORIAKI
发明人： KAWANO KAZUHISA , TAKAMORI MAYUMI , OSHIMA NORIAKI
IPC分类号： C07F15/00 , C07F17/00 , C07F17/02 , C23C16/18 , H01L20060101
CPC分类号： C07F17/02 , C23C16/18
摘要： An organometallic compound which has a low melting point and excellent vaporization characteristics and can deposit a film on substrates at low temperatures; and a process for producing an iridium-containing film from the organometallic compound. A compound represented by the general formula [2] or the general formula [3]: [2] [3] is reacted with a compound represented by the general formula [4]: [4] to obtain an organoiridium compound represented by the general formula [1]: [1] [In the formulae, R1 represents hydrogen or lower alkyl; R2 represents lower alkyl; X represents halogeno; and M represents an alkali metal.] This compound is used as a raw material to produce an iridium-containing film.
摘要翻译：有机金属化合物，其熔点低，蒸发特性优异，可在低温下在基材上沉积薄膜; 以及由有机金属化合物制造含铱膜的方法。由通式[2]或通式[3]表示的化合物：[2] [3]与由通式[4]表示的化合物反应：[4]，得到由通式式[1]：[1] [式中，R 1表示氢或低级烷基; R2代表低级烷基; X表示卤素; M表示碱金属。]该化合物用作原料以制造含铱膜。

84. 发明申请

WO2004106583A1 PRECURSOR SOLUTION USED FOR THE CVD METHOD AND USE THEREOF IN THE PRODUCTION OF THIN FILMS 审中-公开
标题翻译：用于CVD方法的前驱物溶液及其在薄膜生产中的应用
公开(公告)号：WO2004106583A1
公开(公告)日：2004-12-09
申请号：PCT/IT2004/000317
申请日：2004-05-28
申请人： SAES GETTERS S.P.A. , TOSHIMA MFG., CO., LTD. , FURUYAMA, Koichi , TASAKI, Yuzo , YODA, Koji
发明人： FURUYAMA, Koichi , TASAKI, Yuzo , YODA, Koji
IPC分类号： C23C16/18
CPC分类号： C23C16/40 , C23C16/408
摘要： To provide a precursor solution which enables to reduce the amount of the solvent and is stable as time passes, and to provide a evaporation method able to evaporate the precursor solution stably over a prolonged period of time in the preparation of a thin film by the liquid source CVD method. Use is made of an organometallic compound as a solute of precursor solution and the precursor solution is supplied into a vaporizer, wherein the organometallic compound is an organometallic compound ( represented by the following general formula ) having 2,2,6,6-tetramethyl-3,5-octanedione as ligand; wherein: x represents an integer from 0 to 4; y represents an integer from 1 to 4; M represents a metal atom or Ti=O functional group; R represents an alkyl group having 1 to 5 carbon atoms; and the valence of M is equal to (x+y).
摘要翻译：提供能够减少溶剂量并且随时间流逝而稳定的前体溶液，并提供能够在通过液体制备薄膜的情况下在长时间内稳定地蒸发前体溶液的蒸发方法源CVD法。使用有机金属化合物作为前体溶液的溶质，将前体溶液供给到蒸发器中，其中有机金属化合物是具有2,2,6,6-四甲基 - 3,5-辛二酮作为配体; 其中：x表示0至4的整数; y表示1〜4的整数， M表示金属原子或Ti = O官能团; R表示碳原子数1〜5的烷基。并且M的化合价等于（x + y）。

85. 发明申请

WO2004050947A1 ルテニウム化合物および金属ルテニウム膜の製造法审中-公开
标题翻译：金属化合物和生产金属薄膜的方法
公开(公告)号：WO2004050947A1
公开(公告)日：2004-06-17
申请号：PCT/JP2003/011848
申请日：2003-09-17
申请人： JSR株式会社 , 酒井達也 , 岡田幸子 , 松木安生
发明人：酒井達也 , 岡田幸子 , 松木安生
IPC分类号： C23C16/18
CPC分类号： C23C16/18 , C07C51/00
摘要： A ruthenium compound capable of forming filmy metallic ruthenium of good quality; and a process for producing a metallic ruthenium film which comprises using the ruthenium compound to produce the film by chemical vapor deposition. The ruthenium compound as a material for chemical vapor deposition is represented by, e.g., the following formula (1).
摘要翻译：能够形成质量好的金属钌的钌化合物; 以及制造金属钌膜的方法，其包括使用所述钌化合物通过化学气相沉积制造所述膜。作为用于化学气相沉积的材料的钌化合物由例如下式（1）表示。

86. 发明申请

WO2004048637A1 MOCVD FORMATION OF CU2S 审中-公开
标题翻译： MOCVD形成CU2S
公开(公告)号：WO2004048637A1
公开(公告)日：2004-06-10
申请号：PCT/US2003/021669
申请日：2003-07-10
申请人： ADVANCED MICRO DEVICES, INC.
发明人： OGLESBY, Jane, V
IPC分类号： C23C16/18
CPC分类号： G11C13/0014 , B82Y10/00 , C23C16/305 , G11C13/0009 , G11C13/0016 , G11C13/0069 , G11C2013/009 , G11C2213/56 , H01L21/28556 , H01L2924/0002 , H01L2924/00
摘要： A system and methodology are disclosed for forming a passive layer (30, 106, 212) on a conductive layer (110, 402, 602, 808). The formation can be done during fabrication of an organic memory cell, where the passive layer (30, 106, 2,12) generally includes a conductivity facilitating compound (106, 406, 614, 1212), such as copper sulfide (CUZS). The conductivity facilitating compound (106, 406, 614, 1212) is deposited onto the conductive layer (110, 402, 602, 808) via plasma enhanced chemical vapor deposition (PECVD) (200, 800, 1200) utilizing a metal organic (MO) precursor (408, 616). The precursor (408, 616) facilitates depositing the conductivity facilitating compound (106, 406, 614, 1212) in the absence of toxic hydrogen sulfide (HZS), and at a relatively low temperature and pressure (e.g., between about 400 to 600 K and 0.05 to 0.5 Pa., respectively). The deposition process can be monitored and controlled to facilitate, among other things, depositing the conductivity facilitating compound to a desired thickness.
摘要翻译：公开了用于在导电层（110,402,602,808）上形成无源层（30,106,212）的系统和方法。可以在有机存储器单元的制造期间进行形成，其中钝化层（30,106,2,12）通常包括导电性促进化合物（106,406,614,1212），例如硫化铜（CUZS）。通过使用金属有机物（MO）的等离子体增强化学气相沉积（PECVD）（200,800,1200）将导电促进化合物（106,406,614,1212）沉积到导电层（110,402,602和808）上。）前体（408,616）。前体（408,616）有助于在不存在有毒硫化氢（HZS）的情况下沉积导电促进化合物（106,406,614,1212），并且在相对低的温度和压力（例如，约400-600K 和0.05〜0.5Pa）。可以监测和控制沉积过程，以便促进导电促进化合物沉积到期望的厚度。

87. 发明申请

WO2004024980A1 ＣＶＤ原料用の有機化合物及び該有機化合物を用いた金属又は金属化合物薄膜の製造方法审中-公开
标题翻译：用于CVD原材料的有机化合物和使用有机化合物生产金属或金属化合物薄膜的方法
公开(公告)号：WO2004024980A1
公开(公告)日：2004-03-25
申请号：PCT/JP2003/009861
申请日：2003-08-04
申请人：田中貴金属工業株式会社 , 斎藤昌幸
发明人：斎藤昌幸
IPC分类号： C23C16/18
CPC分类号： C07C49/92 , C23C16/18 , Y10T428/31855
摘要： An organic compound for CVD raw material, comprising a first organometallic compound having a metal atom coordinating with ligands and, mixed therewith, at least one second organometallic compound comprising as a center atom the same metal atom as in the first organometallic compound, the center atom coordinating with different ligands, which second organometallic compound exhibits decomposition behavior different from that of the fist organometallic compound. In particular, raw material for CVD realizing characteristics of handling easiness and thin film adherence whose simultaneous achievement has been difficult can be produced by selecting a cyclopentadiene complex or derivative thereof as the first organometallic compound and selecting a beta-diketonate compound as the second organometallic compound and by mixing these.
摘要翻译：一种用于CVD原料的有机化合物，其包含具有与配体配位的金属原子的第一有机金属化合物，并与其混合至少一种第二有机金属化合物，其包含与第一有机金属化合物相同的金属原子作为中心原子，中心原子与不同配体配位，第二有机金属化合物表现出与第一有机金属化合物不同的分解行为。特别是，通过选择环戊二烯复合物或其衍生物作为第一有机金属化合物并选择β-二酮化合物作为第二有机金属化合物，可以制备CVD实现处理容易度特性和薄膜粘附难度同时达到的原料并通过混合这些。

88. 发明申请

WO03076678A3 ALD METHOD AND APPARATUS 审中-公开
标题翻译： ALD方法和装置
公开(公告)号：WO03076678A3
公开(公告)日：2004-02-05
申请号：PCT/US0307029
申请日：2003-03-07
申请人： SUNDEW TECHNOLOGIES LLC
发明人： SNEH OFER
IPC分类号： C23C16/02 , C23C16/14 , C23C16/30 , C23C16/34 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/18 , C23C16/24
CPC分类号： C23C16/45529 , C23C16/02 , C23C16/14 , C23C16/306 , C23C16/34 , C23C16/40 , C23C16/402 , C23C16/403 , C23C16/405 , C23C16/45534
摘要： A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substrates and devices that are moisture- and oxygen-sensitive. ALD films, such as oxides, nitrides, semiconductors and metals, are efficiently and cost-effectively deposited from conventional metal precursors and activated nonmetal sources. Additionally, substrate preparation methods for optimized ALD are disclosed.
摘要翻译：提出了一种用于在低温下执行有效且具有成本效益的原子层沉积（ALD）的方法和装置。 ALD膜例如氧化物和氮化物是在可控和温和的氧化条件下在低温和低湿度和氧敏感的器件上制备的。 ALD膜，例如氧化物，氮化物，半导体和金属，从传统的金属前体和活化的非金属源有效且经济地沉积。另外，公开了优化ALD的底物制备方法。

89. 发明申请

WO2002086189A1 SUBSTITUTED CYCLOALKENE NEW COPPER PRECURSORS FOR CHEMICAL VAPOR DEPOSITION OF COPPER METAL THIN FILMS 审中-公开
标题翻译：替代循环烯烃铜箔化学蒸气沉积的新铜前体
公开(公告)号：WO2002086189A1
公开(公告)日：2002-10-31
申请号：PCT/JP2001/003257
申请日：2001-04-16
申请人： SHARP KABUSHIKI KAISHA
发明人： ZHUANG, Wei-Wei , NGUYEN, Tue , CHARNESKI, Lawrence, J. , EVANS, David, R. , HSU, Sheng, Teng
IPC分类号： C23C16/18
CPC分类号： C07F1/08 , C07C45/77 , C07C49/92 , C23C16/18
摘要： A method of forming a volatile copper precursor for chemical vapor deposition of copper metal thin film includes formation of avo latile liquid having a chemical formula of (n-R-m-cyclohexene)Cu(I)(hfac) or (n-R-m-cyclopentene)Cu(I)(hfac), where n,m=1-6, and where R is a alkyl, such as methyl and ethyl.
摘要翻译：形成铜金属薄膜的化学气相沉积挥发性铜前体的方法包括形成化学式为（nRm-环己烯）Cu（I）（hfac）或（nRm-环戊烯）Cu（I）的无水液体，（hfac），其中n，m = 1-6，其中R是烷基，例如甲基和乙基。

90. 发明申请

WO02018394A1 SOURCE REAGENT COMPOSITIONS AND METHOD FOR FORMING METAL FILMS ON A SUBSTRATE BY CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：源试剂组合物和通过化学气相沉积在基材上形成金属膜的方法
公开(公告)号：WO02018394A1
公开(公告)日：2002-03-07
申请号：PCT/US2001/026339
申请日：2001-08-23
IPC分类号： C07C49/92 , C07F1/00 , C07F3/00 , C07F5/00 , C07F5/06 , C07F7/00 , C07F7/28 , C07F9/00 , C07F9/94 , C07F11/00 , C07F15/00 , C23C16/18 , C23C16/30 , C23C16/40
CPC分类号： C23C16/305 , C07F1/005 , C07F3/003 , C07F5/003 , C07F5/069 , C07F7/003 , C07F7/006 , C07F9/005 , C07F9/94 , C07F11/005 , C07F15/004 , C23C16/18 , C23C16/40
摘要： A metalorganic complex composition comprising a metalorganic complex selected from the group consisting of: metalorganic complexes comprising one or more metal central atoms coordinated to one or more monodentate or multidentate organic ligands, and complexed with one or more complexing monodentate or multidentate ligands containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, So, O and F; wherein when the number of metal atoms is one and concurrently the number of complexing monodentate or multidentate ligands is one, then the complexing monodentate or multidentate ligand of the metalorganic complex is selected from the group consisting of beta-ketoiminates, beta-diiminates, C2-C10 alkenyl, C2-C15 cycloalkenyl and C6-C10 aryl.
摘要翻译：一种金属有机络合物组合物，其包含选自以下的金属有机络合物：包含与一个或多个单齿或多齿有机配体配位的一个或多个金属中心原子的金属有机络合物，并与一个或多个络合的单齿或多齿配位体络合，所述配位体含有一个或多个独立地选自元素C，N，H，So，O和F的原子的原子; 其中当金属原子数为1并且同时复合单齿或多齿配体的数目为1时，金属有机络合物的络合单齿或多齿配体选自β-酮亚胺酸酯，β-二亚胺基，C2- C10链烯基，C2-C15环烯基和C6-C10芳基。

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