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81. 发明申请

WO2002081106A1 MEGAZONE SYSTEM 审中-公开
标题翻译： MEGAZONE系统
公开(公告)号：WO2002081106A1
公开(公告)日：2002-10-17
申请号：PCT/US2002/011248
申请日：2002-04-08
申请人： AKRION LLC
发明人： KASKKOUSH, Ismail , NOVAK, Richard , NEMETH, Dennis , CHEN, Gim
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , B08B3/02 , B08B7/00 , B08B2203/005 , Y10S134/902
摘要： A process tank and method for stripping photoresist from semiconductor wafers. In one aspect, the invention is a method for processing integrated circuits comprising: placing at least one wafer (40) having an edge in a process tank having a lid (32); closing the lid; filling the process tank with a process liquid to a predetermined level below the edge of the wafer (40); and applying acoustical energy to the process liquid so as to form a mist of process liquid in the process tank. In another aspect the invention is a process tank having a process chamber (31) comprising: a means to support at least one wafer in the processing chamber; means for filling the chamber (31) with a process liquid; a lid (32) adapted to close the chamber; a liquid level sensor (48) adapted to stop the supply of process liquid to the chamber when the process liquid fills the chamber to a predetermined level below a wafer supported in the processing chamber; and an acoustical energy source (49) adapted to supply acoustical energy to process liquid located in the chamber so as to create a mist of the process liquid in the processing chamber.
摘要翻译：一种用于从半导体晶片剥离光致抗蚀剂的工艺罐和方法。一方面，本发明是用于处理集成电路的方法，包括：将具有边缘的至少一个晶片（40）放置在具有盖（32）的处理槽中; 关闭盖子将处理液体用工艺液体填充到晶片（40）的边缘以下的预定水平; 并向工艺液体施加声能，以便在处理罐中形成工艺液体雾。在另一方面，本发明是一种具有处理室（31）的处理罐，包括：用于在处理室中支撑至少一个晶片的装置; 用于用处理液体填充所述腔室（31）的装置; 适于封闭所述腔室的盖子（32）; 液位传感器（48），当液体将处理液体填充到在处理室内支撑的晶片之下的预定水平时，停止向腔室供应过程液体; 以及适于提供声能以处理位于所述室中的液体的声能源（49），以在所述处理室中产生处理液体的雾。

82. 发明申请

WO2002075799A1 NOZZLE FOR INJECTING SUBLIMABLE SOLID PARTICLES ENTRAINED IN GAS FOR CLEANING A SURFACE 审中-公开
标题翻译：注入气体进入清洁表面的可吸附固体颗粒的喷嘴
公开(公告)号：WO2002075799A1
公开(公告)日：2002-09-26
申请号：PCT/KR2002/000348
申请日：2002-02-28
申请人： K.C. TECH CO., LTD. , YOON, Cheol-Nam , KO, Se-Jong
发明人： YOON, Cheol-Nam , KO, Se-Jong
IPC分类号： H01L21/304
CPC分类号： H01L21/3046 , B24C1/003 , B24C3/322 , B24C5/04 , Y10S134/902
摘要： Disclosed is a nozzle for injecting sublimable solid particles, which is capable of minimizing consumption of the carrier gas and also maximizing cleaning efficiency. The nozzle comprises a base block having a space in which carrier gas is supplied through a gas supplying pipe; a sub-block having a space in which cleaning medium decompressed by a regulator is supplied through a cleaning medium supplying pipe; a first venturi block having a venturi path for adiabatically expanding the carrier gas supplied from the space of the base block, and a cleaning medium injection path communicating the venturi path and the space of the sub-block and the carrier gas passed through the venturi path; and a second venturi block having a venturi path for adiabatically expanding the mixed gas of the carrier gas and the cleaning medium.
摘要翻译：公开了一种用于喷射可升华的固体颗粒的喷嘴，其能够最小化载气的消耗并且还使清洗效率最大化。喷嘴包括具有通过气体供给管供给载气的空间的基块; 具有空间的子块，其中通过清洁介质供给管供给由调节器减压的清洁介质; 具有用于绝热膨胀从基座空间供应的载气的文氏管路径的第一文氏管块，以及连通文丘里路径和子块的空间以及通过文氏管路径的载气的清洁介质注入路径 ; 以及具有用于绝热地膨胀载气和清洁介质的混合气体的文氏管路径的第二文氏管块。

83. 发明申请

WO2002072286A1 COMBINED PLASMA/LIQUID CLEANING OF SUBSTRATES 审中-公开
标题翻译：组合等离子体/液体清洗基板
公开(公告)号：WO2002072286A1
公开(公告)日：2002-09-19
申请号：PCT/US2002/007068
申请日：2002-03-07
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人： SELWYN, Gary, S. , HENINS, Ivars
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , B08B3/02 , B08B7/0035 , Y10S134/902
摘要： Apparatus and method for cleaning substrates. A substrate (11) is held and rotated by a chuck (12) and an atmospheric pressure plasma jet (13) places a plasma onto predetermined areas of the substrate (11). Subsequently liquid rinse (15) is sprayed onto the predetermined areas. In one embodiment, a nozzle sprays a gas onto the predetermined areas to assist in drying the predetermined areas when needed.
摘要翻译：用于清洁基板的装置和方法。基板（11）通过卡盘（12）保持并旋转，大气压等离子体射流（13）将等离子体放置在基板（11）的预定区域上。随后将液体冲洗（15）喷洒到预定区域上。在一个实施例中，喷嘴将气体喷射到预定区域上以有助于在需要时干燥预定区域。

84. 发明申请

WO02015255A1 SYSTEM AND METHOD FOR CLEANING SEMICONDUCTOR FABRICATION EQUIPMENT PARTS 审中-公开
标题翻译：清洁半导体制造设备部件的系统和方法
公开(公告)号：WO02015255A1
公开(公告)日：2002-02-21
申请号：PCT/US2001/025275
申请日：2001-08-10
IPC分类号： B08B3/00 , B08B3/08 , C11D3/39 , C11D7/08 , C11D11/00 , C23C16/44 , H01L21/00 , H01L21/461
CPC分类号： B44C1/22 , B08B3/00 , B08B3/08 , B08B3/12 , B44C1/227 , C11D3/3947 , C11D7/08 , C11D11/0047 , C23C16/4407 , H01L21/67253 , Y10S134/902 , Y10T436/12
摘要： A process for cleaning semiconductor fabrication equipment parts includes determining a definition for a clean part including multiple maximum acceptable impurity levels; determining an initial multiple impurity levels of a part prior to its cleaning; determining a cleaning process to apply to the part; applying the cleaning process to the part, wherein the cleaning process creates reduced multiple impurity levels for the part below that of the initial multiple impurity levels; determining the reduced multiple impurity levels; comparing the reduced multiple impurity levels against the multiple maximum acceptable impurities levels of the definition; and repeating the application of the cleaning process to the part if the reduced multiple impurity levels do not meet the definition of a clean part. A dilute aqueous cleaning solution for cleaning parts includes 0.5-1.5%wt. HF; 0.1-0.5%wt. HNO3; and 1-10%wt. H2O2. A method for reducing sub-surface damage to a part includes determining how deep is the sub-surface damage beneath a surface of a part; chemically etching said surface of said part; and stopping said chemical etching of said surface at about said depth of said sub-surface damage.
摘要翻译：清洁半导体制造设备部件的方法包括确定包括多个最大可接受杂质水平的清洁部件的定义; 在清洁之前确定部件的初始多个杂质水平; 确定应用于零件的清洁过程; 将清洁过程应用于部件，其中清洁过程产生的部分低于初始多个杂质水平的多个杂质水平; 确定降低的多个杂质水平; 将降低的多个杂质水平与定义的多个最大可接受杂质水平进行比较; 并且如果减少的多个杂质水平不符合清洁部件的定义，则重复对该部件的清洁处理的应用。用于清洁部件的稀释水性清洁溶液包括0.5-1.5重量％ HF; 0.1-0.5％（重量）。 HNO3; 和1-10％wt。 H2O2。一种减少对零件的表面下损伤的方法包括确定零件表面以下的亚表面损伤有多深; 化学蚀刻所述部件的所述表面; 并且在所述子表面损伤的大约所述深度处停止所述表面的所述化学蚀刻。

85. 发明申请

WO0124234A3 A METHOD FOR CLEANING AND TREATING A SEMICONDUCTOR WAFER AFTER CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：一种在化学机械抛光后清洗和处理半导体波长的方法
公开(公告)号：WO0124234A3
公开(公告)日：2002-01-17
申请号：PCT/US0027139
申请日：2000-09-28
申请人： LAM RES CORP
发明人： MIKHAYLICH KATRINA A , RAVKIN MIKE
IPC分类号： C11D7/06 , C09K13/08 , C11D7/18 , C11D7/26 , C11D7/32 , C11D7/60 , C11D17/08 , H01L21/02 , H01L21/304 , H01L21/321 , H01L21/306
CPC分类号： H01L21/02074 , Y10S134/902
摘要： A method is provided for cleaning a surface of a semiconductor wafer after a CMP operation. In one example, an improved cleaning chemical (ICC) is applied to the surface of the wafer. The ICC is configured to transform a copper film on the surface of the wafer into a water soluble form. The wafer surface is scrubbed. The wafer is then rinsed with a liquid. The scrubbing and the rinsing are configured to remove a controlled amount of the water soluble copper from the surface of the wafer and the brush, wherein the applying, the scrubbing, and the rinsing are performed in a brush box.
摘要翻译：提供了一种在CMP操作之后清洁半导体晶片的表面的方法。在一个示例中，将改进的清洁化学品（ICC）施加到晶片的表面。 ICC被配置为将晶片表面上的铜膜转化成水溶性形式。晶片表面被擦洗。然后用液体冲洗晶片。洗涤和冲洗被配置为从晶片和刷子的表面去除受控量的水溶性铜，其中施加，洗涤和漂洗在刷盒中进行。

86. 发明申请

WO0133609B1 APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS 审中-公开
标题翻译：用于清洁半导体波形的装置
公开(公告)号：WO0133609B1
公开(公告)日：2002-01-03
申请号：PCT/US0028117
申请日：2000-10-11
申请人： MEMC ELECTRONIC MATERIALS
发明人： SCHMIDT PHILIP R , SEILKOP JON , SPOHR CRAIG
IPC分类号： H01L21/673 , H01L21/00
CPC分类号： H01L21/67313 , H01L21/67316 , H01L21/67326 , H01L21/6733 , Y10S134/902
摘要： A device for cleaning semiconductor wafers is provided. The device includes a carrier for holding wafers during the cleaning process. The carrier includes a frame with an open top and a plurality of carrier rods extending between opposite ends of the frame. The carrier rods have grooves that receive marginal edge portions of the wafers to retain them against movement in the carrier during cleaning and transportation. The grooves are structured to reduce the amount of contaminants remaining on the wafers after cleaning. The frame may be made substantially entirely of a polymeric material.
摘要翻译：提供了一种用于清洁半导体晶片的装置。该装置包括用于在清洁过程中保持晶片的载体。载体包括具有开口顶部的框架和在框架的相对端部之间延伸的多个承载杆。承载杆具有接收晶片的边缘部分的槽，以在清洁和运输期间保持它们抵抗载体中的运动。这些凹槽被构造成减少在清洁之后残留在晶片上的污染物的量。框架可以基本上完全由聚合物材料制成。

87. 发明申请

WO01082337A1 DEVICE AND METHOD FOR TREATING SEMICONDUCTOR WAFERS 审中-公开
标题翻译： DEVICE AND METHOD FOR处理半导体晶片
公开(公告)号：WO01082337A1
公开(公告)日：2001-11-01
申请号：PCT/EP2001/003578
申请日：2001-03-29
IPC分类号： H01L21/304 , H01L21/00
CPC分类号： H01L21/67075 , Y10S134/902 , Y10S438/906
摘要： The aim of the invention is to reduce the chemical consumption in a method for treating substrates, especially semiconductor wafers, in a treatment vessel, into which different treatment fluids from respective containers are introduced in succession in order to treat the substrates. To this end, the invention provides that a treatment fluid is fed into a collection vessel after a treatment, at least one portion of the treatment fluid is withdrawn from the collection vessel and returned into the respective container, and the collection vessel is rinsed after the withdrawal of a treatment fluid and before receiving another treatment fluid. The invention also relates to a device for treating substrates, especially semiconductor wafers, in a treatment vessel. Said device comprises a first valve unit for introducing different treatment fluids from different containers into the treatment vessel, and comprises at least one collection vessel for collecting the treatment fluid after a treatment, a second valve unit for removing at least one portion of the treatment fluid from the collection vessel and returning it into the respective container, and a rinsing unit for rinsing the collection vessel.
摘要翻译：从各自的模板开始的方法中用于在其中以治疗一种不同的处理流体后的基板，以减少化学品的消耗的处理容器处理基材，尤其是半导体晶片，所述vorgliegende发明提供了处理后的处理液的收集容器通过后，从收集容器的处理流体中的至少一部分返回到各自的模板，并且所述收集容器被处理流体的出口之后漂洗，之前记录进一步的处理流体。根据本发明进一步处理基材，尤其是半导体晶片，一个在一个处理罐，具有第一阀单元，其用于在处理槽引入具有不同的模板不同的处理流体和至少一个用于收集处理流体的处理后收集容器的装置，一个第二阀单元，用于至少导电从保持罐到相应的模板和冲洗单元的处理流体的一部分被设置用于冲洗收集池。

88. 发明申请

WO01074985A1 FLUORINATED SOLVENT COMPOSITIONS CONTAINING OZONE 审中-公开
标题翻译：包含臭氧的氟化溶剂组合物
公开(公告)号：WO01074985A1
公开(公告)日：2001-10-11
申请号：PCT/US2000/021598
申请日：2000-08-08
IPC分类号： C11D7/02 , C11D7/26 , C11D7/32 , C11D7/50 , C11D11/00 , H01L21/304 , H01L21/306
CPC分类号： C11D3/3947 , C11D7/263 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/32 , C11D7/3263 , C11D7/3281 , C11D7/5018 , C11D11/0047 , H01L21/02052 , Y10S134/902
摘要： A homogeneous non-aqueous compositions containing a fluorinated solvent, ozone, and optionally a co-solvent and the use of these compositions for cleaning and oxidizing substrates is described.
摘要翻译：描述了含有氟化溶剂，臭氧和任选的助溶剂的均匀的非水性组合物以及这些组合物用于清洗和氧化底物的用途。

89. 发明申请

WO0125167A8 PROCESS FOR CLEANING CERAMIC ARTICLES 审中-公开
标题翻译：清洁陶瓷制品的工艺
公开(公告)号：WO0125167A8
公开(公告)日：2001-09-27
申请号：PCT/US9931018
申请日：1999-12-23
申请人： SAINT GOBAIN CERAMICS
发明人： HAERLE ANDREW G , MEDER GERALD S
IPC分类号： B24C1/00 , B24C3/32 , C04B41/53 , C04B41/91 , C23C16/44 , H01L21/00 , B08B7/02 , C23C16/02
CPC分类号： B24C1/086 , B24C1/003 , B24C3/322 , C04B41/009 , C04B41/53 , C04B41/91 , C23C16/4407 , H01L21/67028 , H01L21/67069 , Y10S134/902 , C04B41/5346 , C04B41/5353 , C04B35/00 , C04B35/565
摘要： A method for cleaning ceramic workpieces such as SiC boats used in semiconductor fabrication is disclosed. The method comprises washing a virgin or used ceramic workpiece with a strong acid and then using a pelletized CO2 cleaning process on the acid-washed component. The inventive method has been found to produce a workpiece having a very low level of metallic and particulate contaminants on its surface.
摘要翻译：公开了一种用于清洁半导体制造中使用的诸如SiC舟皿的陶瓷工件的方法。该方法包括用强酸洗涤未加工或用过的陶瓷工件，然后在酸洗组分上使用颗粒状二氧化碳清洗方法。已经发现本发明的方法产生在其表面上具有非常低水平的金属和颗粒污染物的工件。

90. 发明申请

WO01063002A1 METHOD FOR REMOVING ADSORBED MOLECULES FROM A CHAMBER 审中-公开
标题翻译： METHOD FOR REMOVING吸附分子从腔室
公开(公告)号：WO01063002A1
公开(公告)日：2001-08-30
申请号：PCT/EP2001/001931
申请日：2001-02-21
IPC分类号： C23C16/44 , C23C14/56 , H01L21/00 , H01L21/205 , H01L21/324
CPC分类号： C23C16/4408 , C23C14/564 , H01L21/67098 , Y10S134/902 , Y10S438/905 , Y10S438/906
摘要： In order to quickly and efficiently remove polar molecules, such as water molecules, as well as non-polar molecules, such as oxygen molecules, from a chamber or from objects, second polar molecules having a desorbant effect on the first molecules are introduced into the chamber.
摘要翻译：为快速和有效地除去极性分子，诸如例如水分子，而且非极性分子如氧分子，从一个腔室或物体的第二极性分子被引入到腔室，其具有在第一分子解吸效果。

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