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    • 81. 发明申请
    • METHOD AND APPARAUTUS RELATING TO RECEPTION OF RADIO SIGNALS
    • 关于接收无线电信号的方法和装置
    • WO2015010263A1
    • 2015-01-29
    • PCT/CN2013/079944
    • 2013-07-24
    • TELEFONAKTIEBOLAGET L M ERICSSON(PUBL)LI, Ming
    • LI, MingSU, Youping
    • H04B1/10
    • H04B1/1036H04B2001/1063
    • Method and multi carrier receiver for removing interference from a RF-signal. In a multi carrier receiver with a heterodyne receiver structure, the RF-signal is received from a multi carrier transmitting entity. The RF-signal comprises a data part an interference part. The interference part is detected by means of the interference unit, and a frequency and a power level of the interference part is determined. A frequency of a first LO is adjusted, such that an output signal of a first mixer is frequency shifted towards an upper edge or a lower edge of a first IF bandpass filter when the determined power level exceeds a predetermined threshold. By detecting an interference part of an incoming RF-signal and controlling a local oscillator based on the detected interference, an effective and flexible solution is achieved for removing interference from the RF-signal. (Figure 6)
    • 用于消除RF信号干扰的方法和多载波接收机。 在具有外差接收机结构的多载波接收机中,从多载波发射实体接收RF信号。 RF信号包括数据部分干扰部分。 通过干扰单元检测干扰部分,确定干扰部分的频率和功率电平。 调节第一LO的频率,使得当所确定的功率电平超过预定阈值时,第一混频器的输出信号向第一IF带通滤波器的上边缘或下边缘频移。 通过检测输入RF信号的干扰部分并基于检测到的干扰来控制本地振荡器,实现了用于消除来自RF信号的干扰的有效且灵活的解决方案。 (图6)
    • 85. 发明申请
    • NON-CONTACT ROTATIONAL POSITION SENSOR SYSTEM
    • 非接触式旋转位置传感器系统
    • WO2013010292A1
    • 2013-01-24
    • PCT/CN2011/001196
    • 2011-07-21
    • HONEYWELL INTERNATIONAL INC.XU, XiaochiZHAO, XudongLI, Ming
    • XU, XiaochiZHAO, XudongLI, Ming
    • G01D5/12G01D5/14G01B7/00G01B7/30
    • G01B7/30G01D5/145
    • A rotational position sensor system includes a magnet carrier (104), first and second radially spaced magnets (106), and a bipolar magnetic sensor (108). The magnet carrier (104) is configured to mount on a rotating body and rotate therewith between first and second fixed positions. The first and second magnets (106) each have first and second magnetic poles, which are coupled to the magnet carrier (104), and a curved outer surface. The curved outer surface of the first magnet has a first arc length, and the curved outer surface of the second magnet has a second arc length that is greater than the first arc length. The bipolar magnetic sensor (108) is mounted adjacent to the magnet carrier (104) and is configured to switch from a first state, when the magnet carrier (104) is in the first fixed position, to a second state when the magnet carrier (104) is in the second fixed position.
    • 旋转位置传感器系统包括磁体托架(104),第一和第二径向间隔开的磁体(106)和双极磁性传感器(108)。 磁体托架(104)构造成安装在旋转体上并随着其在第一和第二固定位置之间旋转。 第一和第二磁体(106)各自具有耦合到磁体载体(104)的第一和第二磁极以及弯曲的外表面。 第一磁体的弯曲外表面具有第一弧长,并且第二磁体的弯曲外表面具有大于第一弧长的第二弧长。 双极磁传感器(108)安装在磁体托架(104)的附近,并且当磁体托架(104)处于第一固定位置时,从磁体托架(104)的第一状态切换到第二状态 104)处于第二固定位置。
    • 87. 发明申请
    • LED CONTROL USING MODULATION FREQUENCY DETECTION TECHNIQUES
    • 使用调制频率检测技术的LED控制
    • WO2012031110A1
    • 2012-03-08
    • PCT/US2011/050192
    • 2011-09-01
    • OSRAM SYLVANIA INC.LI, MingDENVIR, KerryMOSKOWITZ, Philip E.
    • LI, MingDENVIR, KerryMOSKOWITZ, Philip E.
    • H05B33/08
    • H05B33/0869H05B33/0827H05B33/086
    • A light emitting diode (LED) controller for controlling a plurality of LED channels includes channel select circuitry, detection circuitry, and error processor circuitry. The channel select circuitry is configured to drive N-l LED channels of a plurality of LED channels at a nominal modulation frequency and to selectively drive a selected one of the N LED channels at a probe modulation frequency. The detection circuitry is configured to receive a composite brightness signal corresponding to brightness signals from the N LED channels. The detection circuitry is further configured to filter the composite bright signal and generate a selected brightness signal corresponding to a brightness of the selected LED channel at the probe modulation frequency. The error processor circuitry is configured to compare the selected brightness signal to user defined and/or preset photometric quantities and generate a control signal for adjusting the brightness of the selected LED channel.
    • 用于控制多个LED通道的发光二极管(LED)控制器包括通道选择电路,检测电路和误差处理器电路。 通道选择电路被配置为以标称调制频率驱动多个LED通道的N-1个LED通道,并以探针调制频率有选择地驱动N个LED通道中的一个。 检测电路被配置为接收对应于来自N个LED通道的亮度信号的复合亮度信号。 检测电路还被配置为对复合亮信号进行滤波,并以探头调制频率产生对应于所选择的LED通道的亮度的所选择的亮度信号。 误差处理器电路被配置为将所选择的亮度信号与用户定义的和/或预设的光度量进行比较,并产生用于调节所选择的LED通道的亮度的控制信号。
    • 90. 发明申请
    • DEPOSITION OF THIN FILM DIELECTRICS AND LIGHT EMITTING NANO-LAYER STRUCTURES
    • 薄膜电沉积和发光纳米结构的沉积
    • WO2011106860A1
    • 2011-09-09
    • PCT/CA2010/000287
    • 2010-03-01
    • GROUP IV SEMICONDUCTOR, INC.NOEL, Jean-PaulLI, Ming
    • NOEL, Jean-PaulLI, Ming
    • H01L21/469G02F1/015H01L33/00H01L33/34H01L49/02H01S5/30
    • H01L21/02164C23C16/0218C23C16/345C23C16/401C23C16/56H01L21/0217H01L21/022H01L21/02312H01L21/02337H05B33/10
    • A method is disclosed for deposition of thin film dielectrics, and in particular for chemical vapour deposition of nano-layer structures comprising multiple layers of dielectrics, such as, silicon dioxide, silicon nitride, silicon oxynitride and/or other silicon compatible dielectrics. The method comprises post-deposition surface treatment of deposited layers with a metal or semiconductor source gas, e.g. a silicon source gas. Deposition of silicon containing dielectrics preferably comprises silane-based chemistry for deposition of doped or undoped dielectric layers, and surface treatment of deposited dielectric layers with silane. Surface treatment provides dielectric layers with improved layer-to-layer uniformity and lateral continuity, and substantially atomically flat dielectric layers suitable for multilayer structures for electroluminescent light emitting structures, e.g. active layers containing rare earth containing luminescent centres. Doped or undoped dielectric thin films or nano-layer dielectric structures may also be provided for other semiconductor devices.
    • 公开了一种用于沉积薄膜电介质的方法,特别是用于化学气相沉积包括多层电介质的纳米层结构,例如二氧化硅,氮化硅,氮氧化硅和/或其它与硅相容的电介质。 该方法包括用金属或半导体源气体沉积表面处理沉积层,例如, 硅源气体。 含硅电介质的沉积优选包括用于沉积掺杂或未掺杂的电介质层的硅烷基化学,以及用硅烷表面处理沉积的介电层。 表面处理提供具有改进的层间均匀性和横向连续性的电介质层,以及适用于电致发光发光结构的多层结构的基本上原子平坦的电介质层。 含有含稀土的发光中心的活性层。 也可以为其它半导体器件提供掺杂或未掺杂的电介质薄膜或纳米层介电结构。