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61. 发明申请

WO2019070719A1 III-NITRIDE SURFACE-EMITTING LASER AND METHOD OF FABRICATION 审中-公开
公开(公告)号：WO2019070719A1
公开(公告)日：2019-04-11
申请号：PCT/US2018/053982
申请日：2018-10-02
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人： FORMAN, Charles , LEE, SeungGeun , YOUNG, Erin , KEARNS, Jared , DENBAARS, Steven P. , SPECK, James S. , NAKAMURA, Shuji
IPC分类号： H01S5/183 , H01S5/18
摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 λ or at least 20 λ , where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In-Au bonding. This is the first report of a VCSEL capable of continuous wave operation.

62. 发明申请

WO2017079168A1 III-NITRIDE TUNNEL JUNCTION WITH MODIFIED P-N INTERFACE 审中-公开
标题翻译： III-氮化物隧道结与改性P-N界面
公开(公告)号：WO2017079168A1
公开(公告)日：2017-05-11
申请号：PCT/US2016/059929
申请日：2016-11-01
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人： YONKEE, Benjamin P. , YOUNG, Erin C. , LEONARD, John T. , MARGALITH, Tal , SPECK, James S. , DENBAARS, Steven P. , NAKAMURA, Shuji
IPC分类号： H01L21/02 , H01L25/075 , H01L29/20 , H01L29/36 , H01L29/88 , H01L33/06
CPC分类号： H01L21/02584 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L29/2003 , H01L29/365 , H01L29/88 , H01L33/04
摘要： A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).
摘要翻译：具有改进的p-n界面的III族氮化物隧道结，其中所述改进的p-n界面包括Δ掺杂层以降低隧道电阻。可以使用由氧（O），锗（Ge）或硅（Si）组成的施主原子来掺杂δ掺杂层; 受主原子由镁（Mg）或锌（Zn）组成; 或由铁（Fe）或碳（C）组成的杂质。

63. 发明申请

WO2023076607A1 LIGHT EMITTING DIODES CONTAINING EPITAXIAL LIGHT CONTROL FEATURES 审中-公开
公开(公告)号：WO2023076607A1
公开(公告)日：2023-05-04
申请号：PCT/US2022/048233
申请日：2022-10-28
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人： GANDROTHULA, Srinivas , NAKAMURA, Shuji , DENBAARS, Steven P.
IPC分类号： H01L21/027
摘要： A method for fabricating epitaxial light control features, without reactive ion etching or wet etching, when active layers are included. The epitaxial light control features comprise light extraction or guiding structures integrated on an epitaxial layer of a light emitting device such as a light emitting diode. The light extraction or guiding structures are fabricated on the epitaxial layer using an epitaxial lateral overgrowth (ELO) technique. The epitaxial light control features can have many different shapes and can be fabricated with standard processing techniques, making them highly manufacturable at costs similar to standard processing techniques.

64. 发明申请

WO2022187619A1 METHOD TO IMPROVE THE PERFORMANCE OF GALLIUM-CONTAINING MICRON-SIZED LIGHT-EMITTING DEVICES 审中-公开
公开(公告)号：WO2022187619A1
公开(公告)日：2022-09-09
申请号：PCT/US2022/018904
申请日：2022-03-04
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人： DENBAARS, Steven P. , WONG, Matthew S.
IPC分类号： H01L29/45 , H01L29/66 , H01L29/778
摘要： Gallium-containing semiconductor layers are grown on a substrate, wherein the gallium-containing semiconductor layers comprise AlxGayInzNvPwAsu, where 0≤x≤1, 0≤y≤1, 0≤z≤1, 0≤v≤1, 0≤w≤1, 0≤u≤1, v+w+u=1, and x+y+z=1. Dry etching of the gallium-containing semiconductor layers exposes sidewalls of the layers. Surface treatments are performed to recover from damage to the sidewalls resulting from the dry etching. Dielectric materials are deposited on the sidewalls, for example, by atomic layer deposition (ALD), to passivate the sidewalls. The resulting gallium-containing semiconductor layers have an improvement in optical efficiency as compared to gallium-containing semiconductor layers that are not subjected to the surface treatments and the deposition of the dielectric materials.

65. 发明申请

WO2022178393A1 MONOLITHIC, CASCADED, MULTIPLE COLOR LIGHT-EMITTING DIODES WITH INDEPENDENT JUNCTION CONTROL 审中-公开
公开(公告)号：WO2022178393A1
公开(公告)日：2022-08-25
申请号：PCT/US2022/017241
申请日：2022-02-22
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人： LI, Panpan , LI, Hongjian , NAKAMURA, Shuji , DENBAARS, Steven P.
IPC分类号： H01L33/32 , H01L21/02 , H01L29/20 , H01L31/109 , H01L33/00 , H01L33/06
摘要： A method of fabricating a plurality of monolithic, cascaded, multiple color III-nitride light-emitting diodes (LEDs) with independent junction control, wherein: each of the LEDs is comprised of at least an n-type III-nitride layer, a III-nitride emitting layer, and a p-type III-nitride layer; at least two of the LEDs are separated by an n-type tunnel junction (TJ) insertion layer grown by selective area growth on or above the p-type III-nitride layer of one of the LEDs; the p-type III-nitride layer of one of the LEDs and the n-type tunnel junction insertion layer form a tunnel junction; and the p-type III-nitride layer of one of the LEDs is at least partially covered by the n-type tunnel junction insertion layer.

66. 发明申请

WO2021243178A1 III-NITRIDE LED WITH UV EMISSION BY AUGER CARRIER INJECTION 审中-公开
公开(公告)号：WO2021243178A1
公开(公告)日：2021-12-02
申请号：PCT/US2021/034800
申请日：2021-05-28
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人： RIENZI, Vincent , ZOLLNER, Christian , DENBAARS, Steven P. , NAKAMURA, Shuji
IPC分类号： G02B27/09 , H01S5/00 , H01S5/22
摘要： A III-nitride LED with simultaneous visible and ultraviolet (UV) emission, in which the visible emission is due to conventional InGaN active region mechanisms and the UV emission occurs due to Auger carrier injection into a UV light emitting region, such as impurity-doped AlGaN. The primary application for the III-nitride LED is general airborne pathogen inactivation to prevent the transmission of airborne-mediated pathogens while being safe for humans.

67. 发明申请

WO2020150482A1 WAFER BONDING FOR EMBEDDING ACTIVE REGIONS WITH RELAXED NANOFEATURES 审中-公开
公开(公告)号：WO2020150482A1
公开(公告)日：2020-07-23
申请号：PCT/US2020/013896
申请日：2020-01-16
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人： REILLY, Caroline E. , MISHRA, Umesh K. , KELLER, Stacia , DENBAARS, Steven P.
IPC分类号： H01L21/02 , H01L21/00 , H01L21/32 , H01L21/762
摘要： A method for fabricating a device, as well as the device itself, which includes growing a bonding layer on a first wafer or substrate, wherein the bonding layer includes at least partially relaxed features; and then bonding a second wafer or substrate to the features in on the first wafer or substrate, to cap and contact the features with separately grown material.

68. 发明申请

WO2018023125A1 Ce:YAG/Al2O3 COMPOSITES FOR LASER-EXCITED SOLID-STATE WHITE LIGHTING 审中-公开
标题翻译： Ce：用于激光激发的固态白光的YAG / Al2O3复合材料
公开(公告)号：WO2018023125A1
公开(公告)日：2018-02-01
申请号：PCT/US2017/044724
申请日：2017-07-31
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人： COZZAN, Clayton J. , DENBAARS, Steven P. , SESHADRI, Ram
IPC分类号： F21V7/00 , B05D5/06 , H01L31/055 , H05B33/12
摘要： A method for fabricating a composite useful in a white light emitting device, includes mixing a phosphor and a filler to form a mixture; sintering the mixture (e.g., using spark plasma sintering) to form a composite; and annealing the composite to reduce oxygen vacancies and improve optical properties of the composite. Also disclosed is a white light emitting device including a laser diode or light emitting diode optically pumping the phosphor in the composite to produce white light. The composite fabricated using the method (and having, e.g., at most 50% phosphor by weight) can (1 ) reduce an operating temperature of the phosphor by 55 degrees, ( 2) increase an external quantum efficiency (e.g., by at least 15%) of the white light emitting device, and (3) result in color points and quality of the white light that is equal to or improved, as compared to without the filler.
摘要翻译：一种用于制造用于白光发射装置的复合物的方法，包括混合荧光物质和填充物以形成混合物; 烧结该混合物（例如，使用放电等离子烧结）以形成复合材料; 并对复合材料进行退火以减少氧空位并改善复合材料的光学性能。还公开了一种白光发射装置，其包括激光二极管或发光二极管，光学泵浦复合物中的磷光体以产生白光。使用该方法制造的复合物（并且具有例如至多50重量％的荧光体）可以（1）将荧光体的操作温度降低55度，（2）增加外部量子效率（例如增加至少15 ％），和（3）与没有填充物的情况相比，导致白色光的色点和质量等于或改善。

69. 发明申请

WO2015089379A1 HIGH POWER SEMIPOLAR {30-3-1} LIGHT-EMITTING DIODES WITH LOW CURRENT DROOP AND LOW THERMAL DROOP 审中-公开
标题翻译：低功耗半导体（30-3-1）发光二极管，具有低电流和低电流
公开(公告)号：WO2015089379A1
公开(公告)日：2015-06-18
申请号：PCT/US2014/069975
申请日：2014-12-12
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人： ZHAO, Yuji , OH, Sang Ho , BECERRA, Daniel L. , DENBAARS, Steven P. , NAKAMURA, Shuji
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/16
摘要： A high power semipolar {30-3-1 } light-emitting diode (LED) with low current droop and low thermal droop. Specifically, a thick active layer is used in order to reduce efficiency droop. For example, the LED's efficiency is higher than 40% with an active layer thickness larger than 10 nm. Experimental data shows the LED's efficiency droop is less than 1% at 35 A/cm 2 , 5% at 50 A/cm 2 , 10% at 100 A/cm 2 , and/or 20% at 1000 A/cm 2 . Consequently, the LED's efficiency droop is lower than that of a polar (c-plane) LED operating at a similar current density with a similar indium composition. Moreover, the LED has a small device area less than about 0.1 mm 2 in which the LED's light output power is over about 1 W.
摘要翻译：具有低电流下降和低热下降的高功率半极性{30-3-1}发光二极管（LED）。具体地，为了降低效率下降，使用厚的有源层。例如，LED的效率高于40％，有源层厚度大于10nm。实验数据显示，在35A / cm 2下，LED的效率下降小于1％，在50A / cm 2下为5％，在100A / cm 2下为10％，在1000A / cm 2下为20％。因此，LED的效率下降低于在具有相似铟组成的类似电流密度下操作的极性（c面）LED的效率下降。此外，LED具有小于约0.1mm 2的小的器件面积，其中LED的光输出功率大于约1W。

70. 发明申请

WO2022240716A2 III-NITRIDE BASED DEVICES GROWN ON A THIN TEMPLATE ON THERMALLY DECOMPOSED MATERIAL 审中-公开
公开(公告)号：WO2022240716A2
公开(公告)日：2022-11-17
申请号：PCT/US2022/028264
申请日：2022-05-09
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人： CHAN, Philip , DENBAARS, Steven P. , NAKAMURA, Shuji
IPC分类号： H01L21/205 , C30B25/10 , H01L21/02 , H01L33/04 , H01L33/12 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L21/7806 , H01L33/007 , H01S2301/173 , H01S5/0216 , H01S5/0217 , H01S5/04253 , H01S5/2068 , H01S5/22 , H01S5/3063 , H01S5/3213 , H01S5/34333
摘要： A III-nitride based device is fabricated having an in-plane lattice constant or strain that is more than 30% biaxially relaxed, by creating a III-nitride based decomposition stop layer on or above a III-nitride based decomposition layer, wherein a temperature is increased to decompose the III-nitride based decomposition layer; and growing a III-nitride based device structure on or above the III-nitride based decomposition stop layer. The III-nitride based device structure includes at least one of an n-type layer, active layer, and p-type layer, and at least one of the n-type layer, active layer and p-type layer has an in-plane lattice constant or strain that is preferably more than 30% biaxially relaxed, more preferably 50% or more biaxially relaxed, and most preferably at least 70% biaxially relaxed.

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