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61. 发明申请

WO2007117392A2 ON-PLUG MAGNETIC TUNNEL JUNCTION DEVICES BASED ON SPIN TORQUE TRANSFER SWITCHING 审中-公开
标题翻译：基于旋转转矩开关的ON-PLUG磁性隧道连接装置
公开(公告)号：WO2007117392A2
公开(公告)日：2007-10-18
申请号：PCT/US2007/008203
申请日：2007-03-29
申请人： GRANDIS INC. , RENESAS TECHNOLOGY CORP. , WANG, Lien-Chang , CHEN, Eugene Youjun , HUAI, Yiming , DIAO, Zhitao
发明人： WANG, Lien-Chang , CHEN, Eugene Youjun , HUAI, Yiming , DIAO, Zhitao
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： Techniques and device designs associated with devices having magnetic or magnetoresistive tunnel junctions (MTJs) configured to operate based on spin torque transfer switching. On-plug MTJ designs and fabrication techniques are described.
摘要翻译：与具有磁或磁阻隧道结（MTJ）的装置相关联的技术和设备设计，其被配置为基于自旋扭矩传递切换进行操作。描述了插头MTJ设计和制造技术。

62. 发明申请

WO2007100626A2 CURRENT DRIVEN MEMORY CELLS HAVING ENHANCED CURRENT AND ENHANCED CURRENT SYMMETRY 审中-公开
标题翻译：具有增强电流和增强电流对称性的电流驱动存储器电池
公开(公告)号：WO2007100626A2
公开(公告)日：2007-09-07
申请号：PCT/US2007/004662
申请日：2007-02-22
申请人： GRANDIS, INC. , HUAI, Yiming , CHEN, Eugene
发明人： HUAI, Yiming , CHEN, Eugene
CPC分类号： G11C11/1697 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C2013/0071 , G11C2013/0073
摘要： A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.
摘要翻译：描述了一种用于提供和使用磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元。每个磁存储单元包括磁性元件和与磁性元件耦合的选择装置。通过在第一或第二方向通过磁性元件驱动的写入电流来对磁性元件进行编程。一方面，该方法和系统包括提供与磁存储单元和电压源耦合的电压源和电压泵。电源提供电源电压。电压泵向选择装置提供具有大于电源电压的幅度的偏置电压。另一方面包括在氧化物晶体管上提供硅作为选择装置。另一方面包括向晶体管的主体提供当晶体管截止时为第一电压的体偏置电压，以及晶体管导通时的第二电压。

63. 发明申请

WO2007050679A2 CURRENT DRIVEN SWITCHED MAGNETIC STORAGE CELLS HAVING IMPROVED READ AND WRITE MARGINS AND MAGNETIC MEMORIES USING SUCH CELLS 审中-公开
标题翻译：具有改进的阅读和写入标记和使用这种细胞的磁记录的当前驱动的开关磁存储电池
公开(公告)号：WO2007050679A2
公开(公告)日：2007-05-03
申请号：PCT/US2006/041620
申请日：2006-10-25
申请人： GRANDIS, INC. , CHEN, Eugene
发明人： CHEN, Eugene
IPC分类号： G11C11/00
CPC分类号： G11C11/1653 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： A method and system for providing a magnetic memory is described. The magnetic memory includes a plurality of magnetic storage cell and at least one bit line and a plurality of source lines corresponding to the plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element that is programmed to a high resistance state by a first write current driven through the magnetic element in a first direction and to a low resistance state by a second write current driven through the magnetic element in a second direction. The bit line(s) and the source lines are configured to drive the first write current through the magnetic element in the first direction, to drive the second write current through the magnetic element in the second direction, and to drive at least one read current through the magnetic element in a third direction that does not destabilize the low resistance state.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。磁存储器包括多个磁存储单元和对应于多个磁存储单元的至少一个位线和多个源极线。每个磁存储单元包括磁性元件，该磁性元件通过在第一方向上通过磁性元件驱动的第一写入电流被编程为高电阻状态，并且通过在第二方向上驱动通过磁性元件的第二写入电流而被编程为低电阻状态。位线和源极线被配置为在第一方向上驱动通过磁性元件的第一写入电流，以驱动第二写入电流通过第二方向上的磁性元件，并且驱动至少一个读取电流通过不会使低电阻状态不稳定的第三方向的磁性元件。

64. 发明申请

WO2007011881A2 MAGNETIC ELEMENTS HAVING IMPROVED SWITCHING CHARACTERISTICS AND MAGNETIC MEMORY DEVICES USING THE MAGNETIC ELEMENTS 审中-公开
标题翻译：具有改进的开关特性的磁性元件和使用磁性元件的磁性存储器件
公开(公告)号：WO2007011881A2
公开(公告)日：2007-01-25
申请号：PCT/US2006/027715
申请日：2006-07-18
申请人： GRANDIS, INC. , APALKOV, Dmytro , HUAI, Yiming
发明人： APALKOV, Dmytro , HUAI, Yiming
IPC分类号： G11B5/127 , H01L21/00 , G11B5/33 , G11C11/15 , G11C11/00
CPC分类号： G01R33/093 , G11C11/16
摘要： A method and system for providing a magnetic element and a memory using the magnetic element are described. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The spacer layer is nonferromagnetic and resides between the pinned layer and the free layer. At least the free layer has a first end portion, a second end portion and a central portion between the first end portion and the second end portion. The first end portion, the second end portion and the central portion form an S-shape. At least one of the first end portion and the second end portion includes a curve. The magnetic element is also configured to allow the free layer to be switched at least in part due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：描述了使用磁性元件提供磁性元件和存储器的方法和系统。该方法和系统包括提供钉扎层，提供间隔层，并提供自由层。间隔层是非铁磁性的并且位于被钉扎层和自由层之间。至少自由层具有在第一端部和第二端部之间的第一端部，第二端部和中心部分。第一端部，第二端部和中央部形成S形。第一端部和第二端部中的至少一个包括曲线。磁性元件还被配置为允许自由层至少部分地由于当写入电流通过磁性元件时的自旋转移而被切换。

65. 发明申请

WO2006071724A2 MTJ ELEMENTS WITH HIGH SPIN POLARIZATION LAYERS CONFIGURED FOR SPIN-TRANSFER SWITCHING AND SPINTRONICS DEVICES USING THE MAGNETIC ELEMENTS 审中-公开
标题翻译：具有配置用于旋转切换的高旋转极化层的MTJ元件和使用磁性元件的旋转器件
公开(公告)号：WO2006071724A2
公开(公告)日：2006-07-06
申请号：PCT/US2005/046584
申请日：2005-12-22
申请人： GRANDIS, INC. , HUAI, Yiming , PAKALA, Mahendra
发明人： HUAI, Yiming , PAKALA, Mahendra
IPC分类号： H01L21/00 , H01L29/94 , G11C11/22
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3204 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01F10/3286 , H01F41/302
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing first and second pinned layers, a free layer, and first and second barrier layers between the first and second pinned layers, respectively, and the free layer. The first barrier layer is preferably crystalline MgO, which is insulating, and configured to allow tunneling through the first barrier layer. Furthermore, the first barrier layer has an interface with another layer, such as the free layer or the first pinned layer. The interface has a structure that provides a high spin polarization of at least fifty percent and preferably over eighty percent. The second barrier layer is insulating and configured to allow tunneling through the second barrier layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括分别在第一和第二被钉扎层之间提供第一和第二钉扎层，自由层以及第一和第二阻挡层以及自由层。第一阻挡层优选是结晶的MgO，其是绝缘的，并且被配置为允许隧道穿过第一阻挡层。此外，第一阻挡层具有与另一层（例如自由层或第一固定层）的界面。界面具有提供至少百分之五十，优选百分之八十以上的高自旋极化的结构。第二阻挡层是绝缘的并且被配置为允许隧道穿过第二阻挡层。磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

66. 发明申请

WO2006063007A2 METHOD AND SYSTEM FOR PROVIDING A HIGHLY TEXTURED MAGNETORESISTANCE ELEMENT AND MAGNETIC MEMORY 审中-公开
标题翻译：提供高纹理磁阻元件和磁记忆的方法和系统
公开(公告)号：WO2006063007A2
公开(公告)日：2006-06-15
申请号：PCT/US2005044180
申请日：2005-12-06
申请人： GRANDIS INC , PAKALA MAHENDRA , VALET THIERRY , HUAI YIMING , DIAO ZHITAO
发明人： PAKALA MAHENDRA , VALET THIERRY , HUAI YIMING , DIAO ZHITAO
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01F41/302 , H01F41/325
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned layer and the free layer. The spacer layer is insulating and has an ordered crystal structure. The spacer layer is also configured to allow tunneling through the spacer layer. In one aspect, the free layer is comprised of a single magnetic layer having a particular crystal structure and texture with respect to the spacer layer. In another aspect, the free layer is comprised of two sublayers, the first sublayer having a particular crystal structure and texture with respect to the spacer layer and the second sublayer having a lower moment. In still another aspect, the method and system also include providing a second pinned layer and a second spacer layer that is nonmagnetic and resides between the free layer and the second pinned layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括在被钉扎层和自由层之间提供钉扎层，自由层和间隔层。间隔层是绝缘的并且具有有序晶体结构。间隔层还被构造成允许穿过间隔层的隧穿。在一个方面，自由层由相对于间隔层具有特定晶体结构和纹理的单个磁性层组成。在另一方面，自由层由两个子层组成，第一子层相对于间隔层具有特定的晶体结构和纹理，而第二子层具有较低的力矩。在另一方面，该方法和系统还包括提供非磁性的第二被钉扎层和第二间隔层，并且位于自由层和第二钉扎层之间。磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

67. 发明申请

WO2005112034A3 SPIN BARRIER ENHANCED MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY USING THE SAME 审中-公开
标题翻译：旋转障碍增强磁阻效应元件和使用其的磁记忆
公开(公告)号：WO2005112034A3
公开(公告)日：2006-02-16
申请号：PCT/US2005017531
申请日：2005-05-11
申请人： GRANDIS INC , THIERRY VALET
发明人： THIERRY VALET
IPC分类号： G11C11/00 , G11C11/16 , G11C11/44
CPC分类号： H01L43/08 , G11C11/16
摘要： A method and system for providing a magnetic element that is used in a magnetic memory device. The magnetic element includes pinned (122), spacer (13), free (140), and spin barrier layers (150). The spacer layer (130) is nonmagnetic and resides between the pinned (122) and free layers (140). The free layer (140) can be switched using spin transfer when a write current is passed through the magnetic element. The free layer (140) resides between the spacer layer (130) and the spin barrier (150) layer. The spin barrier layer (150) is configured to reduce an outer surface contribution to a damping constant of the free layer (140).
摘要翻译：一种用于提供在磁存储器件中使用的磁性元件的方法和系统。磁性元件包括钉扎（122），间隔件（13），自由（140）和自旋阻挡层（150）。隔离层（130）是非磁性的并且位于被钉扎（122）和自由层（140）之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层（140）。自由层（140）位于间隔层（130）和自旋阻挡层（150）层之间。自旋阻挡层（150）被配置为减小对自由层（140）的阻尼常数的外表面贡献。

68. 发明申请

WO2005082061A3 SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION 审中-公开
标题翻译：具有高垂直各向异性和平面内平衡磁化的自由层的自旋转移磁性元件
公开(公告)号：WO2005082061A3
公开(公告)日：2005-12-29
申请号：PCT/US2005006161
申请日：2005-02-24
申请人： GRANDIS INC , NGUYEN PAUL P , HUAI YIMING
发明人： NGUYEN PAUL P , HUAI YIMING
IPC分类号： G11C11/16 , G11C17/02 , H01F10/30 , H01F10/32 , H01F41/30 , H01L31/119 , H01L43/00 , H01L43/08
CPC分类号： H01F41/302 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , G11C11/1675 , H01F10/30 , H01F10/3236 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/26 , Y10T428/261 , Y10T428/265
摘要： A method and System for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-ofplane demagnetization energy.
摘要翻译：公开了一种用于提供可用于磁存储器的磁性元件的方法和系统。磁性元件包括钉扎的非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二固定层。或者，包括第二钉扎和第二间隔层以及静磁耦合到自由层的第二自由层。至少一个自由层具有高垂直各向异性。高垂直各向异性具有垂直各向异性能量，其至少是平面外退磁能量的百分之二十但小于百分之百。

69. 发明申请

WO2005112034A2 SPIN BARRIER ENHANCED MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY USING THE SAME 审中-公开
标题翻译：旋转障碍增强磁阻效应元件和磁记忆
公开(公告)号：WO2005112034A2
公开(公告)日：2005-11-24
申请号：PCT/US2005/017531
申请日：2005-05-11
申请人： GRANDIS, INC. , THIERRY, Valet
发明人： THIERRY, Valet
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, spacer, free, and spin barrier layers. The spacer layer is nonmagnetic and resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer resides between the spacer layer and the spin barrier layer. The spin barrier layer is configured to reduce an outer surface contribution to a damping constant of the free layer. In one aspect, the spin barrier layer has a high areal resistance and may substantially eliminate spin pumping induced damping. In another aspect, the magnetic element also includes a spin accumulation layer between the spin barrier and free layers. The spin accumulation layer has a high conductivity, preferably being metallic, and may have a long spin diffusion length.
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括钉扎，间隔物，自由和自旋阻挡层。间隔层是非磁性的并且位于被钉扎层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。自由层位于间隔层和自旋阻挡层之间。自旋阻挡层被配置为减小对自由层的阻尼常数的外表面贡献。在一个方面，自旋势垒层具有高的面电阻，并且可以基本上消除自旋泵送诱发的阻尼。在另一方面，磁性元件还包括在自旋屏障和自由层之间的自旋累积层。自旋累积层具有高导电性，优选为金属，并且可以具有长的自旋扩散长度。

70. 发明申请

WO2005050653A3 STRESS ASSISTED CURRENT DRIVEN SWITCHING FOR MAGNETIC MEMORY APPLICATIONS 审中-公开
标题翻译：用于磁记忆应用的应力辅助电流驱动开关
公开(公告)号：WO2005050653A3
公开(公告)日：2005-10-27
申请号：PCT/US2004037633
申请日：2004-11-12
申请人： GRANDIS INC , PAKALA MAHENDRA , HUAI YIMING
发明人： PAKALA MAHENDRA , HUAI YIMING
IPC分类号： G11C20060101 , G11C11/16 , G11C17/02 , H01L21/336 , H01L21/8246 , H01L27/22 , H01L43/08
CPC分类号： G11C11/16 , B82Y10/00 , B82Y25/00 , H01F10/3272 , H01F10/3286 , H01L27/228 , H01L43/08
摘要： A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic elements and providing at least one stress-assist layer. Each of the plurality of magnetic elements is configured to be written using spin transfer. The at least one stress-assist layer is configured to exert at least one stress on at least one magnetic element of the plurality of magnetic elements during writing. The reduction of spin-transfer switching current is due to stress exerted by the stress-assist layer on the magnetic elements during writing. Stability of the magnetic memory with respect to thermal fluctuations is not compromised because the energy barrier between the two magnetization states is unchanged once the switching current is turned off.
摘要翻译：公开了一种用于提供磁存储器的方法和系统。该方法和系统包括提供多个磁性元件并提供至少一个应力辅助层。多个磁性元件中的每一个被配置为使用自旋转移来写入。所述至少一个应力辅助层被配置为在书写期间在所述多个磁性元件的至少一个磁性元件上施加至少一个应力。自旋转移开关电流的减小是由于应力辅助层在写入期间对磁性元件施加的应力。相对于热波动，磁存储器的稳定性不会受到损害，因为一旦切换电流关闭，两个磁化状态之间的能量势垒就不变。

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